Abstract: Provided is a massage device which can provide various massage functions and stretching functions to the user's arm by linearly moving an arm massage unit in conjunction with a rotational action when the arm massage unit rotates. The massage device includes: a body massage unit including a main frame forming the skeleton of the massage device, and massaging a user's body; arm massage units respectively arranged on both sides of the body massage unit, accommodating both arms of the user, and configured on the body massage unit to rotate around a rotational shaft; a rotation module for rotating the arm massage units in at least one direction; and a position adjustment module operating in conjunction with the rotation action of the arm massage units by the rotation module to allow linear movement of the arm massage units due to the self-weight of the arm massage units.

Abstract: A method for manufacturing an electronic device including a semiconductor memory may include forming a first carbon electrode material, surface-treating the first carbon electrode material to decrease a surface roughness of the first carbon electrode material, and forming a second carbon electrode material on the treated surface of the first carbon electrode material. The second carbon electrode material may have a thickness that is greater than a thickness of the first carbon electrode material.

Abstract: An exemplary embodiment of the present invention provides a foreign substance inspection system for a display unit, including: a lighting unit configured to provide incident light to a display unit having an organic light emitting display panel; and a foreign substance detecting unit configured to receive incident light that is reflected by the display unit and detect whether a foreign substance is introduced into the display unit.

Abstract: A semiconductor device may include first row lines each extending in a first direction, column lines each extending in a second direction crossing the first direction, second row lines each extending in the first direction, a plurality of first memory cells respectively coupled between the first row lines and the column lines, each of the plurality of first memory cells including a first variable resistance layer and a first dielectric layer positioned between the first variable resistance layer and a corresponding one of the first row lines, and a plurality of second memory cells respectively coupled between the second row lines and the column lines, each of the plurality of second memory cells including a second variable resistance layer and a second dielectric layer positioned between the second variable resistance layer and a corresponding one of the second row lines.

Abstract: A microfluidic structure in which a plurality of chambers arranged at different positions are connected in parallel and into which a fixed amount of fluid may be efficiently distributed without using a separate driving source, and a microfluidic device having the same. The microfluidic device includes a platform having a center of rotation and including at least one microfluidic structure. The microfluidic structure includes a sample supply chamber configured to accommodate a sample, a plurality of first chambers arranged in a circumferential direction of the platform at different distances from the center of rotation of the platform, and a plurality of siphon channels, each of the siphon channels being connected to a corresponding one of the first chambers.

Abstract: Provided is a massage device including a rotatable arm massage unit and, particularly, to a massage device having a rotatable arm massage unit to provide various functions to a user. To this end, an aspect of the present invention may include: a body massage unit which accommodates at least a part of a user's body and massages the user's body; and a pair of arm massage units which are arranged at opposite sides of the body massage unit to respectively accommodate both arms of the user and massage the arms of the user, wherein the body massage unit includes a main frame including arm frames to which the respective arm massage units are connected, and the arm massage units can rotate in at least one direction.

Abstract: A method for manufacturing a display unit according to an exemplary embodiment of one aspect of the present invention includes: unwinding a first film from a first film roll, and carrying the first film; attaching a second film onto the carried first film and forming an elongated film laminated body; forming a cutting line in the film laminated body in a width direction at intervals along a longitudinal direction and forming a film sheet piece; and laminating the film sheet piece on a first surface of a panel.

Abstract: A chalcogenide material may include germanium (Ge), arsenic (As), selenium (Se) and from 0.5 to 10 at % of at least one group 13 element. A variable resistance memory device may include a first electrode, a second electrode, and a chalcogenide film interposed between the first electrode and the second electrode and including from 0.5 to 10 at % of at least one group 13 element. In addition, an electronic device may include a semiconductor memory. The semiconductor memory may include a column line, a row line intersecting the column line, and a memory cell positioned between the column line and the row line, wherein the memory cell comprises a chalcogenide film including germanium (Ge), arsenic (As), selenium (Se), and from 0.5 to 10 at % of at least one group 13 element.

Abstract: A method of manufacturing a display unit including: preparing an optical film; forming a first alignment mark on the optical film; forming a cut-out line, corresponding to a predetermined closed curve layout, on the optical film based on a position of the first alignment mark; preparing a panel having a second alignment mark; aligning the optical film and the panel based on the positions of the first alignment mark and the second alignment mark; and laminating the optical film, after the processing of forming the cut-out line, on the panel.

Abstract: A semiconductor device may include first row lines each extending in a first direction, column lines each extending in a second direction crossing the first direction, second row lines each extending in the first direction, a plurality of first memory cells respectively coupled between the first row lines and the column lines, each of the plurality of first memory cells including a first variable resistance layer and a first dielectric layer positioned between the first variable resistance layer and a corresponding one of the first row lines, and a plurality of second memory cells respectively coupled between the second row lines and the column lines, each of the plurality of second memory cells including a second variable resistance layer and a second dielectric layer positioned between the second variable resistance layer and a corresponding one of the second row lines.

Abstract: A method for manufacturing an electronic device including a semiconductor memory may include forming a first carbon electrode material, surface-treating the first carbon electrode material to decrease a surface roughness of the first carbon electrode material, and forming a second carbon electrode material on the treated surface of the first carbon electrode material. The second carbon electrode material may have a thickness that is greater than a thickness of the first carbon electrode material.

Abstract: An electronic device includes a semiconductor memory. The semiconductor memory includes word lines, bit lines intersecting the word lines, and memory cells coupled to and disposed between the word lines and the bit lines, each of the memory cells including a variable resistance layer in an amorphous state regardless of a value of data stored in the memory cells. In a reset operation, a memory cell is programmed to a high-resistance amorphous state by applying, to the memory cell, a sub-threshold voltage that is lower than a lowest threshold voltage among threshold voltages of the memory cells.

Abstract: A method for manufacturing an electronic device including a semiconductor memory may include forming a first carbon electrode material, surface-treating the first carbon electrode material to decrease a surface roughness of the first carbon electrode material, and forming a second carbon electrode material on the treated surface of the first carbon electrode material. The second carbon electrode material may have a thickness that is greater than a thickness of the first carbon electrode material.

Abstract: A display unit manufacturing system including: a panel conveyance route including an optical film attaching unit configured to attach an optical film to a panel; an inspection unit which inspects whether the panel having the optical film attached thereto is defective and identifies a defective panel; a panel storing unit which stores the defective panel after the optical film is separated therefrom; and a control unit which controls whether the panel stored in the panel storing unit is supplied to the panel conveyance route.

Abstract: The present invention relates to an optical film laminating system for laminating an optical film on a panel in order to manufacture a display unit wherein a control unit which sets, in accordance with attachment conditions, an optical film laminating mode in respect to the panel to at least one of a first mode in which the panel and the optical film are inputted together between a first roller unit and a second roller unit so that the optical film is laminated on the panel, and a second mode in which the second panel conveying unit holds the panel by suction and conveys the panel and the optical film is inputted between the panel and an attachment roller unit, which is any one of the first roller unit and the second roller unit, so that the optical film is laminated on the panel.

Abstract: An electronic device includes a semiconductor memory. The semiconductor memory includes a word line, a bit line, and a memory cell coupled to and disposed between the word line and the bit line, the memory cell including a variable resistance layer that remains in an amorphous state regardless of a value of data stored in the memory cell. In a reset operation, the memory cell is programmed to a high-resistance amorphous state by applying, to the memory cell, a sub-threshold voltage that is greater than 0.7 time of a threshold voltage of the memory cell and is smaller than 0.95 time of the threshold voltage.

Abstract: A panel alignment apparatus for easily aligning a rectangular panel and preventing damage to an optical film during alignment, where the optical film is bonded to the panel such that one or more sides of the optical film protrude from the panel.

Abstract: A method of manufacturing an electronic device including a semiconductor memory may include forming a first active layer, forming a first electrode material over the first active layer, performing a heat treatment process on the first electrode material and the first active layer, and forming a second electrode material over the heat-treated first electrode material.

Abstract: A method for manufacturing an electronic device including a semiconductor memory may include forming a first carbon electrode material, surface-treating the first carbon electrode material to decrease a surface roughness of the first carbon electrode material, and forming a second carbon electrode material on the treated surface of the first carbon electrode material. The second carbon electrode material may have a thickness that is greater than a thickness of the first carbon electrode material.

Abstract: A microfluidic structure in which a plurality of chambers arranged at different positions are connected in parallel and into which a fixed amount of fluid may be efficiently distributed without using a separate driving source, and a microfluidic device having the same. The microfluidic device includes a platform having a center of rotation and including at least one microfluidic structure. The microfluidic structure includes a sample supply chamber configured to accommodate a sample, a plurality of first chambers arranged in a circumferential direction of the platform at different distances from the center of rotation of the platform, and a plurality of siphon channels, each of the siphon channels being connected to a corresponding one of the first chambers.