Abstract: Provided is an one-pass type dispersing and emulsifying apparatus, including: a chamber, at both sides of which an inlet for inputting a liquid and an outlet for discharging the liquid is arranged to provide a moving path for the liquid therein; a shaft rotatably arranged inside the chamber; a motor arranged for rotating the shaft; a rotation impeller fixed to the shaft as a plurality at a predetermined interval along a length direction and arranged on the moving path for the liquid, wherein at each rotation impeller, a first blade extended toward the inner circumferential surface of a fixing impeller is formed at a predetermined interval as a plurality along the length direction of the shaft; and a fixing impeller provided on the inner surface of the chamber as a plurality along the length direction of the shaft to be disposed around the rotation impeller.

Abstract: Provided is an one-pass type dispersing and emulsifying apparatus, including: a chamber, at both sides of which an inlet for inputting a liquid and an outlet for discharging the liquid is arranged to provide a moving path for the liquid therein; a shaft rotatably arranged inside the chamber; a motor arranged for rotating the shaft; a rotation impeller fixed to the shaft as a plurality at a predetermined interval along a length direction and arranged on the moving path for the liquid, wherein at each rotation impeller, a first blade extended toward the inner circumferential surface of a fixing impeller is formed at a predetermined interval as a plurality along the length direction of the shaft; and a fixing impeller provided on the inner surface of the chamber as a plurality along the length direction of the shaft to be disposed around the rotation impeller.

Abstract: A semiconductor memory device for reducing ripple noise of a back-bias voltage, and a method of driving the semiconductor memory device include a word line driving circuit and a delay logic circuit. The word line driving circuit enables a sub-word line connected to a selected memory cell to a first voltage, and disables the sub-word line of a non-selected memory cell to a second voltage and a third voltage, in response to a sub-word line enable signal, a first word line driving signal, and a second word line driving signal. The delay logic circuit controls the semiconductor memory device so that an amount of charge of the sub-word line that is introduced to the third voltage is greater than an amount of charge of the sub-word line that is introduced to the second voltage by changing a transition point of time of the sub-word line enable signal with respect to a transition point of time of the first word line driving signal, during the disabling of the sub-word line.

Abstract: A semiconductor memory device for reducing ripple noise of a back-bias voltage, and a method of driving the semiconductor memory device include a word line driving circuit and a delay logic circuit. The word line driving circuit enables a sub-word line connected to a selected memory cell to a first voltage, and disables the sub-word line of a non-selected memory cell to a second voltage and a third voltage, in response to a sub-word line enable signal, a first word line driving signal, and a second word line driving signal. The delay logic circuit controls the semiconductor memory device so that an amount of charge of the sub-word line that is introduced to the third voltage is greater than an amount of charge of the sub-word line that is introduced to the second voltage by changing a transition point of time of the sub-word line enable signal with respect to a transition point of time of the first word line driving signal, during the disabling of the sub-word line.