Abstract: The electronic device comprises a substrate (1), at least one semiconductor nanowire (2) and a buffer layer (3) interposed between the substrate (1) and said nanowire (2). The buffer layer (3) is at least partly formed by a transition metal nitride layer (9) from which extends the nanowire (2), said transition metal nitride being chosen from: vanadium nitride, chromium nitride, zirconium nitride, niobium nitride, molybdenum nitride, hafnium nitride or tantalum nitride.

Abstract: A method for manufacturing an optoelectric device comprising a semiconductor substrate, pads on a surface of the substrate; semiconductor elements, each element being in contact with a pad; and a dielectric region extending in the substrate from the surface and connecting, for each pair of pads, one of the pads in the pair to the other pad in the pair, the method successively comprising the forming of the pads and the forming of the region, wherein the region is formed by nitriding of the substrate, the method comprising the successive steps of: depositing a layer on the substrate; forming portions on the layer; etching the parts of the layer which are not covered with the portions to form the pads; removing the portions; and nitriding the pads and the parts of the substrate which are not covered with the pads, wherein the nitriding step successively comprises: a first step of nitriding of the pads at a first temperature; and a second step of nitriding of the parts of the substrate which are not covered with

Abstract: The process for growing at least one semiconductor nanowire (3), said growth process comprising a step of forming, on a substrate (1), a nucleation layer (2) for the growth of the nanowire (3) and a step of growth of the nanowire (3). The step of formation of the nucleation layer (2) comprises the following steps: deposition onto the substrate (1) of a layer of a transition metal (4) chosen from Ti, V, Cr, Zr, Nb, Mo, Hf, Ta; nitridation of at least a part (2) of the transition metal layer so as to form a transition metal nitride layer having a surface intended for growing the nanowire (3).

Abstract: The present invention relates to the use, as a thin sensitive-material film for bolometric detection, of at least one material based on an alloy comprising at least one chalcogenide, said chalcogen element being chosen from sulfur, selenium, telluride and their mixtures, characterized in that said material furthermore contains a sufficient amount of carbon and/or boron to confer upon the material a temperature coefficient of resistivity value at 300° C. at least equal to 40% of the native value of the temperature coefficient of resistivity of said material at room temperature. The invention also relates to a bolometric device and its production process.

Abstract: The present invention relates to a process for preparing nanoparticles of antimonides of metal element(s) in the form of a colloidal solution, using antimony trihydride (SbH3) as a source of antimony.

Abstract: The electronic device comprises a substrate (1), at least one semiconductor nanowire (2) and a buffer layer (3) interposed between the substrate (1) and said nanowire (2). The buffer layer (3) is at least partly formed by a transition metal nitride layer (9) from which extends the nanowire (2), said transition metal nitride being chosen from: vanadium nitride, chromium nitride, zirconium nitride, niobium nitride, molybdenum nitride, hafnium nitride or tantalum nitride.

Abstract: The process for growing at least one semiconductor nanowire (3), said growth process comprising a step of forming, on a substrate (1), a nucleation layer (2) for the growth of the nanowire (3) and a step of growth of the nanowire (3). The step of formation of the nucleation layer (2) comprises the following steps: deposition onto the substrate (1) of a layer of a transition metal (4) chosen from Ti, V, Cr, Zr, Nb, Mo, Hf, Ta; nitridation of at least a part (2) of the transition metal layer so as to form a transition metal nitride layer having a surface intended for growing the nanowire (3).

Abstract: The invention relates to the field of the optical recording of information on a medium, such as an optical disc. To read an optical disc in super-resolution mode, a procedure for optimizing the power of the read laser beam is implemented. This optimization is based on the observation that a correlation exists between the power allowing the disc to be read without risk in super-resolution mode and the reflectivity of the sensitive layer containing the information. The reflectivity of the optical disc is measured for several power levels of the read laser, a critical power is determined on the basis of the reflectivity measurements made, and a read power sufficiently above the critical power, so as to be well outside a range of power levels entailing risks, is selected according to the critical power.

Abstract: A data storage device including a stack of layers is provided. The stack of layers includes at least one memory layer able to effect a storage of data in a plurality of portions of the memory layer by a modification of at least one physico-chemical property of the material of the portions of the memory layer under the effect of an electric current passing through the portions of the memory layer. A plurality of photoconductive columns disposed in the stack of layers passes through each layer in this stack. Each of the portions of the memory layer surrounds one of the photoconductive columns.

Abstract: A device for trapping particles contained in a liquid (L) placed in a tank, characterized in that it comprises a substrate that is transparent at a working wavelength, a thin layer of material with non-linear optical properties that are reversible at the working wavelength and which is fixed to a first face of the transparent substrate to form all or part of at least one wall of the tank, a device for forming an optical trap which comprises a laser source which emits a laser beam and means for forming a waist of the laser beam, the laser beam being incident upon that face of the transparent substrate that lies on the opposite side to the first face and the waist of the laser beam being formed in the thin layer, an evanescent electromagnetic field forming at the surface of the thin layer.

Abstract: The invention relates to the field of optical information recording. According to the invention, an optical storage structure is proposed comprising a substrate equipped with physical marks whose geometrical configuration defines the recorded information, a superposition of three layers on top of the substrate marks, and a transparent protective layer on top of this superposition, the superposition comprising a layer of indium or gallium antimonide inserted between two ZnS/SiO2 dielectric layers. The antimonide layer has a polycrystalline structure with an average crystal grain size between 5 and 50 nanometers. The non-linear behavior of the superposition of three layers under the read laser makes it possible to read information having a size below the theoretical resolution of the reading system.

Abstract: The invention relates to the field of the optical recording of information on a medium, such as an optical disc. To read an optical disc in super-resolution mode, a procedure for optimizing the power of the read laser beam is implemented. This optimization is based on the observation that a correlation exists between the power allowing the disc to be read without risk in super-resolution mode and the amplitude of the read signal which results from the reading of marks having the smallest possible dimension (marks 2 T). The amplitude of the optical disc is measured for several powers of decreasing values of the read laser, the reduction in amplitude is observed. A read power is selected as a function of the power for which a decrease (for example 5%) is noted in the amplitude measured at the start.

Abstract: A device for trapping particles contained in a liquid (L) placed in a tank, characterized in that it comprises a substrate that is transparent at a working wavelength, a thin layer of material with non-linear optical properties that are reversible at the working wavelength and which is fixed to a first face of the transparent substrate to form all or part of at least one wall of the tank, a device for forming an optical trap which comprises a laser source which emits a laser beam and means for forming a waist of the laser beam, the laser beam being incident upon that face of the transparent substrate that lies on the opposite side to the first face and the waist of the laser beam being formed in the thin layer, an evanescent electromagnetic field forming at the surface of the thin layer.

Abstract: The invention relates to the field of optical information recording. In order to prevent abusive or fraudulent use of storage media, the invention provides a process for intentional degradation of information by application of a laser power below the normal power for reading information recorded in super-resolution on the media. This process relies on the surprising observation that a laser power below the super-resolution read power produces an irreversible degradation of the information recorded. This observation has been made with regard to media composed of a three-layer structure comprising an InSb or GaSb layer between two ZnS/SiO2 layers. Application for protecting sensitive data.

Abstract: The invention relates to the field of the optical recording of information on a medium, such as an optical disc. To read an optical disc in super-resolution mode, a procedure for optimizing the power of the read laser beam is implemented. This optimization is based on the observation that a correlation exists between the power allowing the disc to be read without risk in super-resolution mode and the reflectivity of the sensitive layer containing the information. The reflectivity of the optical disc is measured for several power levels of the read laser, a critical power is determined on the basis of the reflectivity measurements made, and a read power sufficiently above the critical power, so as to be well outside a range of power levels entailing risks, is selected according to the critical power.

Abstract: An irreversible optical recording medium comprises at least an active layer presenting a rear face and a front face designed to receive at least an optical writing radiation. The optical writing radiation enables gas bubbles forming write marks to be formed locally in said active layer by means of a layer forming a gas source arranged on the rear face of the active layer. The layer forming the gas source moreover has a thickness less than or equal to 100 nm so as to limit the height of the bubbles formed in the active layer and therefore to improve tracking when read operations are performed. The layer forming the gas source is preferably made of carbon-doped hydrogenated amorphous silicon oxide.

Abstract: The invention relates to optical information storage. According to the invention, what is provided is a high-resolution optical information storage structure, comprising a substrate (10) provided with physical marks, the geometric configuration of which defines the information recorded, a superposition of three layers over the top of the marks on the substrate, and a transparent protective layer over the top of this superposition, the superposition comprising an indium antimonide or gallium antimonide layer (14) inserted between two ZnS/SiO2 dielectric layers (12, 16). The information may be prerecorded in the substrate with a resolution (in terms of size and space) better than the theoretical read resolution permitted by the wavelength of the read laser. The non-linearity in behaviour of the three-layer superposition allows the information to be read if the laser power is well chosen.

Abstract: An optical data storage medium comprises at least one active layer of inorganic material, that is able to undergo local deformations during write operations. The active layer presents a front face which is designed to receive an optical radiation at least during read operations. The support also comprises a thin tin and tellurium based alloy layer forming a semi-reflective layer disposed on the front face of the active layer.

Abstract: The optical recording medium comprises an active layer made of inorganic material, presenting a front face for receiving an optical radiation during writing operations, and a rear face. The inorganic material is a tellurium and zinc alloy comprising an atomic percentage of between 60% and 70% of zinc and between 30% and 40% of tellurium. The alloy comprises preferably 65% of zinc and 35% of tellurium. The medium may comprise a semi-reflecting layer arranged on the front face of the active layer and/or an additional metal layer arranged on the rear face and/or a protective layer of polymer material on the rear face. Thus, writing powers, a mark resolution and a storage density corresponding to DVD format specifications may be achieved.

Abstract: Data storage device, comprising: a stack of layers comprising at least one memory layer able to effect a storage of data in a plurality of portions of the memory layer by a modification of at least one physico-chemical property of the material of said portions of the memory layer under the effect of an electric current passing through said portions of the memory layer; a plurality of photoconductive columns disposed in the stack of layers and passing through each layer in this stack; each of said portions of the memory layer surrounding one of the photoconductive columns.