Abstract: Ultra-compact inductor devices for use in integrated circuits (e.g., RF ICs) that use 3-dimensional Dirac materials for providing the inductor. Whereas inductors currently require significant real estate on an integrated circuit, because they require use of an electrically conductive winding around an insulative core, or such metal deposited in a spiral geometry, the present devices can be far more compact, occupying significantly less space on an integrated circuit. For example, an ultra-compact inductor that could be included in an integrated circuit may include a 3-dimensional Dirac material formed into a geometric shape capable of inductance (e.g., as simple as a stripe or series of stripes of such material), deposited on a substantially non-conductive (i.e., insulative) substrate, on which the Dirac material in the selected geometric shape is positioned. Low temperature manufacturing methods compatible with CMOS manufacturing are also provided.

Abstract: Ultra-compact inductor devices for use in integrated circuits (e.g., RF ICs) that use 3-dimensional Dirac materials for providing the inductor. Whereas inductors currently require significant real estate on an integrated circuit, because they require use of an electrically conductive winding around an insulative core, or such metal deposited in a spiral geometry, the present devices can be far more compact, occupying significantly less space on an integrated circuit. For example, an ultra-compact inductor that could be included in an integrated circuit may include a 3-dimensional Dirac material formed into a geometric shape capable of inductance (e.g., as simple as a stripe or series of stripes of such material), deposited on a substantially non-conductive (i.e., insulative) substrate, on which the Dirac material in the selected geometric shape is positioned. Low temperature manufacturing methods compatible with CMOS manufacturing are also provided.

Abstract: A wave amplitude modulator for modulating a transmitted electromagnetic wave includes one or multiple self-gated capacitively coupled pair(s) of electron layers such as semiconductor or semimetal layers. Two electrical contacts are placed to each layer of electrons of the self-gated pair(s), and a power source is electrically connected to them. The power source, by varying the voltage applied between layers of electrons, tunes the electron density thereof, thereby adjusting the optical conductivity thereof, and the change in the optical conductivity of the layers of electrons causes an amplitude modulation of the transmitted electromagnetic wave passing through the capacitively coupled layers of electrons.

Abstract: A wave amplitude modulator for modulating a transmitted electromagnetic wave includes one or multiple self-gated capacitively coupled pair(s) of electron layers such as semiconductor or semimetal layers. Two electrical contacts are placed to each layer of electrons of the self-gated pair(s), and a power source is electrically connected to them. The power source, by varying the voltage applied between layers of electrons, tunes the electron density thereof, thereby adjusting the optical conductivity thereof, and the change in the optical conductivity of the layers of electrons causes an amplitude modulation of the transmitted electromagnetic wave passing through the capacitively coupled layers of electrons.