Patents by Inventor Berend T. Jonker
Berend T. Jonker has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11894449Abstract: Heterostructures include a layer of a two-dimensional material placed on a multiferroic layer. An ordered array of differing polarization domains in the multiferroic layer produces corresponding domains having differing properties in the two-dimensional material. When the multiferroic layer is ferroelectric, the ferroelectric polarization domains in the layer produce local electric fields that penetrate the two-dimensional material. The local electric fields modulate the charge carriers and carrier density on a nanometer length scale, resulting in the formation of lateral p-n or p-i-n junctions, and variations thereof appropriate for device functions.Type: GrantFiled: September 28, 2022Date of Patent: February 6, 2024Assignee: The Government of the United States of America, as represented by the Secretary of the NavyInventors: Berend T. Jonker, Connie H. Li, Kathleen M. McCreary, Olaf M. J. van't Erve
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Patent number: 11862716Abstract: Heterostructures include a layer of a two-dimensional material placed on a multiferroic layer. An ordered array of differing polarization domains in the multiferroic layer produces corresponding domains having differing properties in the two-dimensional material. When the multiferroic layer is ferroelectric, the ferroelectric polarization domains in the layer produce local electric fields that penetrate the two-dimensional material. The local electric fields modulate the charge carriers and carrier density on a nanometer length scale, resulting in the formation of lateral p-n or p-i-n junctions, and variations thereof appropriate for device functions.Type: GrantFiled: September 28, 2022Date of Patent: January 2, 2024Assignee: The Government of the United States of America, as represented by the Secretary of the NavyInventors: Berend T. Jonker, Connie H. Li, Kathleen M. McCreary, Olaf M. J. van 't Erve
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Patent number: 11817240Abstract: The invention relates to heterostructures including a layer of a two-dimensional material placed on a multiferroic layer. An ordered array of differing polarization domains in the multiferroic layer produces corresponding domains having differing properties in the two-dimensional material. When the multiferroic layer is ferroelectric, the ferroelectric polarization domains in the layer produce local electric fields that penetrate the two-dimensional material. The local electric fields can influence properties of the two-dimensional material, including carrier density, transport properties, optical properties, surface chemistry, piezoelectric-induced strain, magnetic properties, and interlayer spacing. Methods for producing the heterostructures are provided. Devices incorporating the heterostructures are also provided, including tunable sensors, optical emitters, and programmable logic gates.Type: GrantFiled: March 22, 2021Date of Patent: November 14, 2023Assignee: The Government of the United States of America, as represented by the Secretary of the NavyInventor: Berend T Jonker
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Patent number: 11705535Abstract: A nano-indent process for creating a single photon emitter in a two-dimensional materials platform comprising the steps of providing a substrate, providing a layer of polymer, providing a layer of two-dimensional material, utilizing a proximal probe, applying mechanical stress to the layer of two-dimensional material and to the layer of polymer, deforming the layer of two-dimensional material and the layer of polymer, and forming a nano-indent in the two-dimensional material. A single photon emitter in a two-dimensional materials platform comprising a substrate, a deformable polymer film, a two-dimensional material, and a nano-indent in the two-dimensional material.Type: GrantFiled: July 1, 2020Date of Patent: July 18, 2023Assignee: The Government of the United States of America, as represented by the Secretary of the NavyInventors: Berend T. Jonker, Matthew R. Rosenberger, Hsun-Jen Chuang, Joshua R. Hendrickson, Chandriker Kavir Dass
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Publication number: 20230028020Abstract: Heterostructures include a layer of a two-dimensional material placed on a multiferroic layer. An ordered array of differing polarization domains in the multiferroic layer produces corresponding domains having differing properties in the two-dimensional material. When the multiferroic layer is ferroelectric, the ferroelectric polarization domains in the layer produce local electric fields that penetrate the two-dimensional material. The local electric fields modulate the charge carriers and carrier density on a nanometer length scale, resulting in the formation of lateral p-n or p-i-n junctions, and variations thereof appropriate for device functions.Type: ApplicationFiled: September 28, 2022Publication date: January 26, 2023Applicant: The Government of the United States of America, as represented by the Secretary of the NavyInventors: Berend T. Jonker, Connie H. Li, Kathleen M. McCreary, Olaf M.J. van 't Erve
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Publication number: 20230014134Abstract: Heterostructures include a layer of a two-dimensional material placed on a multiferroic layer. An ordered array of differing polarization domains in the multiferroic layer produces corresponding domains having differing properties in the two-dimensional material. When the multiferroic layer is ferroelectric, the ferroelectric polarization domains in the layer produce local electric fields that penetrate the two-dimensional material. The local electric fields modulate the charge carriers and carrier density on a nanometer length scale, resulting in the formation of lateral p-n or p-i-n junctions, and variations thereof appropriate for device functions.Type: ApplicationFiled: September 28, 2022Publication date: January 19, 2023Applicant: The Government of the United States of America, as represented by the Secretary of the NavyInventors: Berend T. Jonker, Connie H. Li, Kathleen M. McCreary, Olaf M.J. van 't Erve
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Publication number: 20220367798Abstract: A method of laser-writing submicron pixels with tunable circular polarization and write-read-erase-reuse capability on Bi2Se3/WS2 at room temperature, comprising the steps of applying a laser to the Bi2Se3/WS2, writing a submicron pixel, wherein the submicron pixel has a circular polarization, modifying the circular polarization, allowing the circular polarization to be tuned across a range of 39.9%, tuning photoluminescence intensity, and tuning photoluminescence peak position. A method of growing Bi2Se3/WS2 as a nano-material or two-dimensional heterostructure for laser-writing submicron pixels with tunable circular polarization and write-read-erase-reuse capability on the Bi2Se3/WS2 heterostructure at room temperature.Type: ApplicationFiled: March 9, 2022Publication date: November 17, 2022Applicant: The Government of the United States of America, as represented by the Secretary of the NavyInventors: Zachariah B. Hennighausen, Kathleen M. McCreary, Olaf M.J. van 't Erve, Berend T. Jonker
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Patent number: 11476353Abstract: The invention relates to heterostructures including a layer of a two-dimensional material placed on a multiferroic layer. An ordered array of differing polarization domains in the multiferroic layer produces corresponding domains having differing properties in the two-dimensional material. When the multiferroic layer is ferroelectric, the ferroelectric polarization domains in the layer produce local electric fields that penetrate the two-dimensional material. The local electric fields modulate the charge carriers and carrier density on a nanometer length scale, resulting in the formation of lateral p-n or p-i-n junctions, and variations thereof appropriate for device functions. Methods for producing the heterostructures are provided. Devices incorporating the heterostructures are also provided.Type: GrantFiled: November 21, 2017Date of Patent: October 18, 2022Assignee: The Government of the United States of America, as represented by the Secretary of the NavyInventors: Berend T. Jonker, Connie H. Li, Kathleen M. McCreary, Olaf M. J. van 't Erve
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Patent number: 11280856Abstract: A device for directly electrically generating and detecting the current-generated spin polarization in topological insulators, comprising a first and fourth contact on a layer of Bi2Se3 and a second contact comprising a ferromagnet/oxide tunnel barrier contact as a detector, and a third contact comprising nonmagnetic metal as a reference contact, a current to the first and fourth contact to produce a net spin polarization, and the spin polarization manifesting as a voltage between the second (magnetic) and third (reference) contacts.Type: GrantFiled: October 27, 2020Date of Patent: March 22, 2022Assignee: The Government of the United States of America, as represented by the Secretary of the NavyInventors: Connie H. Li, Olaf M. J. van 't Erve, Jeremy T. Robinson, Ying Liu, Lian Li, Berend T. Jonker
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Patent number: 11156678Abstract: A magnetic field sensor based on two anti-ferromagnetically coupled magnetic layers separated by multilayer graphene, prepared in a single sputter chamber without a vacuum break.Type: GrantFiled: February 13, 2019Date of Patent: October 26, 2021Assignee: The Government of the United States of America, as represented by the Secretary of the NavyInventors: Olaf M. J. van't Erve, Enrique Cobas, Shu-Fan Cheng, Berend T. Jonker
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Publication number: 20210241947Abstract: The invention relates to heterostructures including a layer of a two-dimensional material placed on a multiferroic layer. An ordered array of differing polarization domains in the multiferroic layer produces corresponding domains having differing properties in the two-dimensional material. When the multiferroic layer is ferroelectric, the ferroelectric polarization domains in the layer produce local electric fields that penetrate the two-dimensional material. The local electric fields can influence properties of the two-dimensional material, including carrier density, transport properties, optical properties, surface chemistry, piezoelectric-induced strain, magnetic properties, and interlayer spacing. Methods for producing the heterostructures are provided. Devices incorporating the heterostructures are also provided, including tunable sensors, optical emitters, and programmable logic gates.Type: ApplicationFiled: March 22, 2021Publication date: August 5, 2021Inventor: Berend T. Jonker
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Patent number: 11024447Abstract: The invention relates to heterostructures including a layer of a two-dimensional material placed on a multiferroic layer. An ordered array of differing polarization domains in the multiferroic layer produces corresponding domains having differing properties in the two-dimensional material. When the multiferroic layer is ferroelectric, the ferroelectric polarization domains in the layer produce local electric fields that penetrate the two-dimensional material. The local electric fields can influence properties of the two-dimensional material, including carrier density, transport properties, optical properties, surface chemistry, piezoelectric-induced strain, magnetic properties, and interlayer spacing. Methods for producing the heterostructures are provided. Devices incorporating the heterostructures are also provided, including tunable sensors, optical emitters, and programmable logic gates.Type: GrantFiled: November 21, 2017Date of Patent: June 1, 2021Assignee: The Government of the United States of America, as represented by the Secretary of the NavyInventor: Berend T. Jonker
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Publication number: 20210109127Abstract: A nano-indent process for creating a single photon emitter in a two-dimensional materials platform comprising the steps of providing a substrate, providing a layer of polymer, providing a layer of two-dimensional material, utilizing a proximal probe, applying mechanical stress to the layer of two-dimensional material and to the layer of polymer, deforming the layer of two-dimensional material and the layer of polymer, and forming a nano-indent in the two-dimensional material. A single photon emitter in a two-dimensional materials platform comprising a substrate, a deformable polymer film, a two-dimensional material, and a nano-indent in the two-dimensional material.Type: ApplicationFiled: July 1, 2020Publication date: April 15, 2021Applicant: The Government of the United States of America, as represented by the Secretary of the NavyInventors: Berend T. Jonker, Matthew R. Rosenberger, Hsun-Jen Chuang, Joshua R. Hendrickson, Chandriker Kavir Dass
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Publication number: 20210109171Abstract: A device for directly electrically generating and detecting the current-generated spin polarization in topological insulators, comprising a first and fourth contact on a layer of Bi2Se3 and a second contact comprising a ferromagnet/oxide tunnel barrier contact as a detector, and a third contact comprising nonmagnetic metal as a reference contact, a current to the first and fourth contact to produce a net spin polarization, and the spin polarization manifesting as a voltage between the second (magnetic) and third (reference) contacts.Type: ApplicationFiled: October 27, 2020Publication date: April 15, 2021Applicant: The Government of the United States of America, as represented by the Secretary of the NavyInventors: Connie H. Li, Olaf M. J. van 't Erve, Jeremy T. Robinson, Ying Liu, Lian Li, Berend T. Jonker
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Patent number: 10852370Abstract: A device for directly electrically generating and detecting the current-generated spin polarization in topological insulators, comprising a first and fourth contact on a layer of Bi2Se3 and a second contact comprising a ferromagnet/oxide tunnel barrier contact as a detector, and a third contact comprising nonmagnetic metal as a reference contact, a current to the first and fourth contact to produce a net spin polarization, and the spin polarization manifesting as a voltage between the second (magnetic) and third (reference) contacts.Type: GrantFiled: October 23, 2018Date of Patent: December 1, 2020Assignee: The Government of the United States of America, as represented by the Secretary of the NavyInventors: Connie H. Li, Olaf M. J. van 't Erve, Jeremy T. Robinson, Ying Liu, Lian Li, Berend T. Jonker
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Patent number: 10686041Abstract: A 3C—SiC buffer layer on Si(001) comprising a porous buffer layer of 3C—SiC on a Si(001) substrate, wherein the porous buffer layer is produced through a solid state reaction, and wherein an amorphous carbon layer on the Si(001) substrate is deposited by magnetron sputtering of a C target at room temperature at a rate of 0.8 nm/min.Type: GrantFiled: April 6, 2017Date of Patent: June 16, 2020Assignee: The Government of the United States of America, as represented by the Secretary of the NavyInventors: Connie H. Li, Glenn G. Jernigan, Berend T. Jonker, Ramasis Goswami, Carl S. Hellberg
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Patent number: 10663773Abstract: The spin-Hall effect can be used to modulate the linear polarization of light via the magneto-optical Kerr effect. A central area of an outer surface of an added layer atop a spin Hall material is illuminated while simultaneously passing a modulated electric current through the material, so that reflected light has a new linear polarization that differs from the initial linear polarization to a degree depending on the amplitude of the modulated electric current.Type: GrantFiled: October 29, 2018Date of Patent: May 26, 2020Assignee: The Government of the United States of America, as represented by the Secretary of the NavyInventors: Olaf M. J. van 't Erve, Connie H. Li, Berend T. Jonker, Aubrey T. Hanbicki, Kathleen M. Mccreary
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Patent number: 10403753Abstract: The invention relates to heterostructures including a layer of a two-dimensional material placed on a multiferroic layer. An ordered array of differing polarization domains and surface charges in the multiferroic layer produces corresponding domains having differing properties in the two-dimensional material. When the multiferroic layer is ferroelectric, the ferroelectric polarization domains in the layer produce local electric fields that penetrate the two-dimensional material. The local electric fields and surface charges can control the structural phase of the two-dimensional material, which in turn determines whether the two-dimensional material layer is insulating or metallic, has a band gap or no band gap, and whether it is magnetic or non-magnetic. Methods for producing the heterostructures are provided. Devices incorporating the heterostructures are also provided.Type: GrantFiled: November 21, 2017Date of Patent: September 3, 2019Assignee: The Government of the United States of America, as represented by the Secretary of the NavyInventors: Berend T. Jonker, Connie H. Li, Kathleen M. McCreary
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Publication number: 20190265312Abstract: A magnetic field sensor based on two anti-ferromagnetically coupled magnetic layers separated by multilayer graphene, prepared in a single sputter chamber without a vacuum break.Type: ApplicationFiled: February 13, 2019Publication date: August 29, 2019Applicant: The Government of the United States of America, as represented by the Secretary of the NavyInventors: Olaf M. J. van 't Erve, Enrique Cobas, Shu-Fan Cheng, Berend T. Jonker
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Patent number: 10261139Abstract: A method of making a magnetic field sensor using in situ solid source graphene and graphene induced anti-ferromagnetic coupling and spin filtering, comprising providing a substrate comprising silicon wafers and thermal oxide, performing DC magnetron sputtering, back-sputtering the substrate, growing amorphous carbon on the substrate, sputtering and growing a first ferromagnetic metal surface on the amorphous carbon, annealing the substrate and the amorphous carbon and the first ferromagnetic metal surface, forming a graphene film on the first ferromagnetic metal surface, wherein the first ferromagnetic metal surface comprises NiFe, sputtering and growing a second ferromagnetic film on the graphene film, and capping the second ferromagnetic film with a platinum layer.Type: GrantFiled: February 6, 2017Date of Patent: April 16, 2019Assignee: The United States of America, as represented by the Secretary of the NavyInventors: Olaf M. J. van 't Erve, Enrique Cobas, Shu-Fan Cheng, Berend T. Jonker