Abstract: An optoelectronic device provided with a support including a face having at least one concave or convex portion, the amplitude of the sagitta of said portion being higher than 1/20th of the chord of the portion, and light-emitting diodes arranged on the portion, each light-emitting diode including a cylindrical, conical or frustoconical semiconductor element in contact with the portion, the amplitude of the sagitta of the contact surface between each semiconductor element and the portion being lower than or equal to 0.5 um.

Abstract: An optoelectronic device provided with a support including a face having at least one concave or convex portion, the amplitude of the sagitta of said portion being higher than 1/20th of the chord of the portion, and light-emitting diodes arranged on the portion, each light-emitting diode including a cylindrical, conical or frustoconical semiconductor element in contact with the portion, the amplitude of the sagitta of the contact surface between each semiconductor element and the portion being lower than or equal to 0.5 um.

Abstract: The invention relates to a process for manufacturing light-emitting diodes comprising the following steps: a) forming light-emitting diodes (5) on a silicon layer (1) of an SOI wafer (1, 2, 3), said layer resting on a carrier (2, 3); b) bonding, on the light-emitting diode side, a silicon wafer forming a cap (7) equipped with a void facing each light-emitting diode; c) thinning the silicon wafer to form an aperture facing each light-emitting diode; d) filling each aperture with a transparent material (21, 23); and e) at least partially removing the carrier of the SOI wafer (3) and producing connecting and heat-sinking metallizations.

Abstract: The invention relates to a process for manufacturing light-emitting diodes comprising the following steps: a) forming light-emitting diodes (5) on a silicon layer (1) of an SOI wafer (1, 2, 3), said layer resting on a carrier (2, 3); b) bonding, on the light-emitting diode side, a silicon wafer forming a cap (7) equipped with a void facing each light-emitting diode; c) thinning the silicon wafer to form an aperture facing each light-emitting diode; d) filling each aperture with a transparent material (21, 23); and e) at least partially removing the carrier of the SOI wafer (3) and producing connecting and heat-sinking metallisations.

Abstract: The invention relates to the field of optical information recording. According to the invention, an optical storage structure is proposed comprising a substrate equipped with physical marks whose geometrical configuration defines the recorded information, a superposition of three layers on top of the substrate marks, and a transparent protective layer on top of this superposition, the superposition comprising a layer of indium or gallium antimonide inserted between two ZnS/SiO2 dielectric layers. The antimonide layer has a polycrystalline structure with an average crystal grain size between 5 and 50 nanometers. The non-linear behavior of the superposition of three layers under the read laser makes it possible to read information having a size below the theoretical resolution of the reading system.

Abstract: A process for packaging a plurality of micro-components made on the same substrate wafer, in which each micro-component is enclosed in a cavity. This process includes making a cover plate; depositing a metal layer on a face of the cover plate or on a face of the wafer; covering the wafer with the cover plate; applying a contact pressure equal to at least one bar onto the cover plate and onto the wafer; and heating the metal layer during pressing until a seal is obtained, each cavity thus being provided with a sealing area and being closed by a part of the cover plate and/or its metal layer.

Abstract: The invention relates to the field of optical information recording. In order to prevent abusive or fraudulent use of storage media, the invention provides a process for intentional degradation of information by application of a laser power below the normal power for reading information recorded in super-resolution on the media. This process relies on the surprising observation that a laser power below the super-resolution read power produces an irreversible degradation of the information recorded. This observation has been made with regard to media composed of a three-layer structure comprising an InSb or GaSb layer between two ZnS/SiO2 layers. Application for protecting sensitive data.

Abstract: A process for packaging a number of micro-components on the same substrate wafer, in which each micro-component is enclosed in a cavity. This process includes making a covering plate comprising a re-useable matrix, a polymer layer, and a metal layer; covering the wafer with the covering plate; applying a contact pressure equal to at least one bar on the covering plate and on the wafer; heating the metal layer during pressing until sealing is obtained, each cavity thus being provided with a sealing area and closed by metal layer; and dissolving the polymer to recover and recycle the matrix.

Abstract: This method for sealing a cavity of a component placed in the chamber is carried out by physical vapour deposition (PVD) of germanium or silicon.

Abstract: The invention relates to optical information storage. According to the invention, what is provided is a high-resolution optical information storage structure, comprising a substrate (10) provided with physical marks, the geometric configuration of which defines the information recorded, a superposition of three layers over the top of the marks on the substrate, and a transparent protective layer over the top of this superposition, the superposition comprising an indium antimonide or gallium antimonide layer (14) inserted between two ZnS/SiO2 dielectric layers (12, 16). The information may be prerecorded in the substrate with a resolution (in terms of size and space) better than the theoretical read resolution permitted by the wavelength of the read laser. The non-linearity in behaviour of the three-layer superposition allows the information to be read if the laser power is well chosen.

Abstract: The invention relates to the field of optical information recording. According to the invention, an optical storage structure is proposed comprising a substrate equipped with physical marks whose geometrical configuration defines the recorded information, a superposition of three layers on top of the substrate marks, and a transparent protective layer on top of this superposition, the superposition comprising a layer of indium or gallium antimonide inserted between two ZnS/SiO2 dielectric layers. The antimonide layer has a polycrystalline structure with an average crystal grain size between 5 and 50 nanometers. The non-linear behavior of the superposition of three layers under the read laser makes it possible to read information having a size below the theoretical resolution of the reading system.

Abstract: This method for sealing a cavity of a component placed in the chamber is carried out by physical vapour deposition (PVD) of germanium or silicon.

Abstract: The invention relates to the field of optical information recording. In order to prevent abusive or fraudulent use of storage media, the invention provides a process for intentional degradation of information by application of a laser power below the normal power for reading information recorded in super-resolution on the media. This process relies on the surprising observation that a laser power below the super-resolution read power produces an irreversible degradation of the information recorded. This observation has been made with regard to media composed of a three-layer structure comprising an InSb or GaSb layer between two ZnS/SiO2 layers. Application for protecting sensitive data.

Abstract: A protective layer (7) formed of a metal or metal alloy capable of absorbing considerable thermomechanical deformations without causing fissures to appear is described for energy storage systems. In particular, the metal or the metal alloy has an expansion coefficient less than 6.10?6 ° C.?1. The protective layer may be associated with a second layer (6) in insulating ceramic. A deposition method is described. Said protection is principally advantageous for microbatteries (10), the constituents of which are reactive to air.

Abstract: A thin layer of hafnium oxide or stacking of thin layers comprising hafnium oxide layers for producing surface treatments of optical components, or optical components, in which at least one layer of hafnium oxide is in amorphous form and has a density less than 8 gm/cm3. The layer is formed by depositing on a substrate without energy input to the substrate.

Abstract: A method for modifying via a heat effect a characteristic of a first zone of a first material, wherein a light radiation is directed towards a second zone in a second material, the diffusion of the heat energy from the second zone to the first zone allowing thermal modification of the first zone.

Abstract: A process for packaging a plurality of micro-components made on the same substrate wafer, in which each micro-component is enclosed in a cavity. This process includes making a cover plate; depositing a metal layer on a face of the cover plate or on a face of the wafer; covering the wafer with the cover plate; applying a contact pressure equal to at least one bar onto the cover plate and onto the wafer; and heating the metal layer during pressing until a seal is obtained, each cavity thus being provided with a sealing area and being closed by a part of the cover plate and/or its metal layer.

Abstract: A process for packaging a number of micro-components on the same substrate wafer, in which each micro-component is enclosed in a cavity. This process includes making a covering plate comprising a re-useable matrix, a polymer layer, and a metal layer; covering the wafer with the covering plate; applying a contact pressure equal to at least one bar on the covering plate and on the wafer; heating the metal layer during pressing until sealing is obtained, each cavity thus being provided with a sealing area and closed by metal layer; and dissolving the polymer to recover and recycle the matrix.

Abstract: A thin layer of hafnium oxide or stacking of thin layers comprising hafnium oxide layers for producing surface treatments of optical components, or optical components, in which at least one layer of hafnium oxide is in amorphous form and has a density less than 8 gm/cm3. The layer is formed by depositing on a substrate without energy input to the substrate.