Abstract: A method of doping a silicon wafer in order to fabricate a photovoltaic cell, the method including the steps of: performing a first doping operation of at least a first portion (11) of a surface (10) of the silicon wafer; forming an oxide layer (40) on the partially doped surface (10); and performing a second doping operation through the oxide layer (40), so as to dope another portion (12) of the surface (10) of the silicon wafer.

Abstract: A method of doping a silicon wafer in order to fabricate a photovoltaic cell, the method comprising the steps consisting in: performing a first doping operation of at least a first portion (11) of a surface (10) of the silicon wafer; forming an oxide layer (40) on the partially doped surface (10); and performing a second doping operation through the oxide layer (40), so as to dope another portion (12) of the surface (10) of the silicon wafer.

Abstract: A method for texturing an active surface of a photovoltaic cell in single-crystal silicon or poly-crystal silicon includes depositing a resin on the active surface of the cell, texturing the resin on the active surface with geometric patterns, and texturing the active surface of the cell by eliminating the deposited resin. The depositing of the resin is preceded by pre-texturing the resin on a depositing tool. The texturing step of the resin on the active surface is simultaneous with the depositing of the resin on the active surface.

Abstract: A method for texturing an active surface of a photovoltaic cell in single-crystal silicon or poly-crystal silicon includes depositing a resin on the active surface of the cell, texturing the resin on the active surface with geometric patterns, and texturing the active surface of the cell by eliminating the deposited resin. The depositing of the resin is preceded by pre-texturing the resin on a depositing tool. The texturing step of the resin on the active surface is simultaneous with the depositing of the resin on the active surface.

Abstract: A phase change memory having a memory material layer consisting of a phase change material, and a first and second electrical contact which are located at a distance from one another and via which a switching zone of the memory material layer can be traversed by a current signal, wherein the current signal can be used to induce a reversible phase change between a crystalline phase and an amorphous phase and thus a change in resistance of the phase change material in the switching zone. The invention also relates to a phase change memory assembly, a phase change memory cell, a 2D phase change memory cell array, a 3D phase change memory cell array and an electronic component.

Abstract: A phase change memory having a memory material layer consisting of a phase change material, and a first and second electrical contact which are located at a distance from one another and via which a switching zone of the memory material layer can be traversed by a current signal, wherein the current signal can be used to induce a reversible phase change between a crystalline phase and an amorphous phase and thus a change in resistance of the phase change material in the switching zone. The invention also relates to a phase change memory assembly, a phase change memory cell, a 2D phase change memory cell array, a 3D phase change memory cell array and an electronic component.

Abstract: The storage medium comprises an array of memory cells (3) which can be addressed by first (1) and second (2) conductors. Each memory cell (3) comprises one zone (10) of an active layer (8) which is initially electrically insulating and which can be made electrically conductive by means of localized plastic deformation (4), such as to selectively connect the first (1) and second (2) associated conductors. Binary information stored in the memory cell (3) is determined by the electrical conducting state of the corresponding zone (10) of the active layer (8). The active layer (8) can be formed using a charged resin. The medium production method comprises assembly of a blank storage medium having an active layer (8) which is in the initial insulating state, production of a stamping die having a stamping pattern that corresponds to the information to be stored, and stamping of the storage medium using the stamping die.

Abstract: The invention relates to a data recording device comprising microtips and a recording medium. The recording medium comprises a substrate with a preferably-carbon resistive layer disposed thereon, said resistive layer being covered with an active layer. According to the invention, the aforementioned active layer can pass from a first electrical resistivity value to a second electrical resistivity value when a voltage is applied between the microtips and a counter electrode. The inventive data recording device also comprises at least one carbon resistive element which is disposed between the active layer and the microtips.

Abstract: The storage medium comprises an array of memory cells (3) which can be addressed by first (1) and second (2) conductors. Each memory cell (3) comprises one zone (10) of an active layer (8) which is initially electrically insulating and which can be made electrically conductive by means of localised plastic deformation (4), such as to selectively connect the first (1) and second (2) associated conductors. Binary information stored in the memory cell (3) is determined by the electrical conducting state of the corresponding zone (10) of the active layer (8). The active layer (8) can be formed using a charged resin. The medium production method comprises assembly of a blank storage medium having an active layer (8) which is in the initial insulating state, production of a stamping die having a stamping pattern that corresponds to the information to be stored, and stamping of the storage medium using the stamping die.

Abstract: The medium comprises a bilayer stack constituted of an inorganic layer (30) and a semi-reflecting layer (32). The inorganic layer (30) can be deformed under the effect of light radiation (34) passed through the semi-reflecting layer, which lowers the reflection coefficient of the stack. Application to irreversible recording of information data, for example on discs.

Abstract: The invention relates to a data recording device comprising microtips and a recording medium. The recording medium comprises a substrate with a preferably-carbon resistive layer disposed thereon, said resistive layer being covered with an active layer. According to the invention, the aforementioned active layer can pass from a first electrical resistivity value to a second electrical resistivity value when a voltage is applied between the microtips and a counter electrode. The inventive data recording device also comprises at least one carbon resistive element which is disposed between the active layer and the microtips.

Abstract: The present invention relates to an optical medium, having on at least one face (10), a superficial recording level (20) and a buried recording level (30), capable of being read and recorded by means of an optical beam having a wave length between 620 and 670 nanometers, and wherein each of the levels has a reflectivity between 6% and 12%.

Abstract: The inventions relates to a laser beam optical recording medium which features several read/write levels, comprising a first half-transparent level and at least a second level, the first one being close to the laser transmitting source, each level comprising a phase changing material layer with two stable states controlled by a laser beam, where the phase changing material is a metallic alloy whose chemical formula writes as: [(GeyTe1-y)a(SbzTe1-z)1-a]1-b(In1-xTex)b with: 0.4≦y≦0.6 0.3≦z≦0.5 0.4≦x≦0.6 0.3≦a≦0.5 0.01≦b≦0.3 the reflection coefficient of the first level being in the range from 10% to 30%, the transmission coefficient being at least 45%, the writing power being lower than 23 mW and the erasing power being lower than 10 mW.

Abstract: The medium comprises a bilayer stack constituted of an inorganic layer (30) and a semi-reflecting layer (32). The inorganic layer (30) can be deformed under the effect of light radiation (34) passed through the semi-reflecting layer, which lowers the reflection coefficient of the stack.

Abstract: The inventions relates to a laser beam optical recording medium which features several read/write levels, comprising a first half-transparent level and at least a second level, the first one being close to the laser transmitting source, each level comprising a phase changing material layer with two stable states controlled by a laser beam, where the phase changing material is a metallic alloy whose chemical formula writes as

Abstract: The present invention relates to a method for reading an information medium (1) comprising a recording layer (14) with a succession of zones of material (14a, 14c) with respective distinct first and second physical states of the material. According to the invention the recording layer is scanned with means (100) for detecting electrical fields.

Abstract: An optical recording device including a medium having a first recording level, which includes a first active film having amorphous areas and crystalline areas, the first recording level being configured to produce a phase difference between an optical beam reflected by the amorphous areas and an optical beam reflected by the crystalline areas; and a second recording level superimposed on the first recording level and including a second active layer with first areas and second areas, the second recording level being configured to produce an intensity difference between an optical beam reflected by the first areas and an optical beam reflected by the second areas.

Abstract: An optical recording medium including a first recording level including a first active film having amorphous areas and crystalline areas, the first recording level being configured to produce a phase difference between an optical beam reflected by the amorphous areas and an optical beam reflected by the crystalline areas; and a second recording level superimposed on the first recording level and including a second active layer with first areas and second areas, the second recording level being configured to produce an intensity difference between an optical beam reflected by the first areas and an optical beam reflected by the second areas.

Abstract: A magneto-optical recording medium having a stack of magnetic layers which include at least one rare earth element and at least one transition metal element. At least one of the magnetic layers contain fluorine with an atomic concentration less than 1%. A process for producing a magneto-optical recording medium including magnetic layers. The process includes a step of controlling the Curie temperatures of the magnetic layers by controlling a fluorine atomic concentration of the magnetic layers.

Abstract: Information recording medium, reading apparatus for said medium and processes for implementing the apparatus. According to the invention, the material constituting the recording layer (15) is photoconducting. The apparatus comprises in particular a microprobe (20) and a light source (26) capable of subjecting the recording layer to a lit or unlit state. The resulting variations in resistivity are used to determine whether the read zone is amorphous or crystalline.