Abstract: A magnetic device includes a first magnetic layer, known as storage layer, having a uniaxial anisotropy with an easy magnetization axis in the plane of the storage layer and having a magnetization of variable direction having two positions of equilibrium along the easy magnetization axis, a second magnetic layer, known as electron spin polarization layer, having a magnetization perpendicular to that of the storage layer and situated out of plane of the electron spin polarization layer, a device configured to make circulate in the layers, and perpendicularly thereto, a current to switch from one position of equilibrium of the direction of magnetization of the storage layer to the other. The device further includes a device to apply a magnetic field, known as transverse field, the direction of which is substantially parallel to the plane of the storage layer and substantially perpendicular to the easy magnetization axis of the storage layer.

Abstract: A method for manufacturing a hybrid non-volatile memory device includes forming first conductive pads; depositing a first conductive layer on a second area of the substrate; etching the first conductive layer to obtain second conductive pads, the second conductive pads having a section at their base smaller than at their top; protecting the upper face of the second conductive pads; oxidizing the substrate so that an insulating material layer covers the upper face of the first conductive pads and sides of the second conductive pads; depositing an oxide layer at the tops of the first conductive pads, resulting in memory elements of a first type supported by the first conductive pads; and forming memory elements of a second type at the tops of the second conductive pads. Each memory element of the second type is supported by one of the second conductive pads.

Abstract: A voltage-controlled spintronic device includes a magnetic layer having an effective anisotropy Keff; a non-magnetic insulating layer; a contact layer; the magnetic layer having an anisotropy switching threshold such that application of a polarisation voltage Vmax allows switching of the effective anisotropy Keff from a direction perpendicular to the reference plane to a direction in the reference plane or vice versa, the magnetic layer including a first layer, with thickness tB, having a volume anisotropy KVB; a second layer, with thickness tA, having a surface anisotropy KSA and a volume anisotropy KVA; the surface anisotropy KSA and the volume anisotropies KVA and KVB respecting, over a given operating temperature range: Min(KSA(V=0), KSA(V=Vmax))<?{KVBtB+KVAtA)<Max(KSA(V=0), KSA(V=Vmax)). KSA(V=0) is the surface anisotropy when no polarisation voltage is applied. KSA(V=Vmax) is the surface anisotropy when a polarisation voltage Vmax is applied.

Abstract: A magnetic device includes a first magnetic layer, known as storage layer, having a uniaxial anisotropy with an easy magnetisation axis in the plane of the storage layer and having a magnetisation of variable direction having two positions of equilibrium along the easy magnetisation axis, a second magnetic layer, known as electron spin polarisation layer, having a magnetisation perpendicular to that of the storage layer and situated out of plane of the electron spin polarisation layer, a device configured to make circulate in the layers, and perpendicularly thereto, a current to switch from one position of equilibrium of the direction of magnetisation of the storage layer to the other. The device further includes a device to apply a magnetic field, known as transverse field, the direction of which is substantially parallel to the plane of the storage layer and substantially perpendicular to the easy magnetisation axis of the storage layer.

Abstract: MRAM element having a magnetic tunnel junction including a reference layer, a storage layer, a tunnel barrier layer between the reference and storage layers, and a storage antiferromagnetic layer. The storage antiferromagnetic layer has a first function of exchange-coupling a storage magnetization of the storage layer and a second function of heating the magnetic tunnel junction when a heating current in passed in the magnetic tunnel junction. The MRAM element has better data retention and low writing temperature.

Abstract: A thermally assisted switching MRAM element including a magnetic tunnel junction including a reference layer having a reference magnetization; a storage layer having a storage magnetization; a tunnel barrier layer included between the storage layer and the reference layer; and a storage antiferromagnetic layer exchange-coupling the storage layer such as to pin the storage magnetization at a low temperature threshold and to free it at a high temperature threshold. The antiferromagnetic layer includes: at least one first antiferromagnetic layer having a first storage blocking temperature, and at least one second antiferromagnetic layer having a second storage blocking temperature; wherein the first storage blocking temperature is below 200° C. and the second storage blocking temperature is above 250° C. The MRAM element combines better data retention compared with known MRAM elements with low writing mode operating temperature.

Abstract: A magnetic logic unit (MLU) cell includes a first and second magnetic tunnel junction, each including a first magnetic layer having a first magnetization, a second magnetic layer having a second magnetization, and a barrier layer; and a field line for passing a field current such as to generate an external magnetic field adapted to adjust the first magnetization. The first and second magnetic layers and the barrier layer are arranged such that the first magnetization is magnetically coupled antiparallel with the second magnetization through the barrier layer. The MLU cell also includes a biasing device arranged for applying a static biasing magnetic field oriented substantially parallel to the external magnetic field such as to orient the first magnetization at about 90° relative to the second magnetization, the first and second magnetizations being oriented symmetrically relative to the direction of the external magnetic field.

Abstract: A method for manufacturing a hybrid non-volatile memory device includes forming first conductive pads; depositing a first conductive layer on a second area of the substrate; etching the first conductive layer to obtain second conductive pads, the second conductive pads having a section at their base smaller than at their top; protecting the upper face of the second conductive pads; oxidizing the substrate so that an insulating material layer covers the upper face of the first conductive pads and sides of the second conductive pads; depositing an oxide layer at the tops of the first conductive pads, resulting in memory elements of a first type supported by the first conductive pads; and forming memory elements of a second type at the tops of the second conductive pads Each memory element of the second type is supported by one of the second conductive pads.

Abstract: A magnetic field sensor includes first and second sensors for detecting first and second magnetic components according to first and second directions. Each sensor includes a flux concentrator including first and second magnetic parts, an air gap between the parts, and a magnetoresistive element in the air gap. Each magnetoresistive element includes a reference layer having a fixed magnetisation direction, the fixed magnetisation direction of the first and second sensors being substantially identical, and a sensitive layer having a variable magnetisation direction, the variable magnetisation direction of the first sensor when the first sensor is in a state of rest being substantially identical to the variable magnetisation direction of the second sensor when the second sensor is in the state of rest. The air gaps of first and second sensor are oriented parallel to a direction XY which is, at ±15°, the bisector of the first and second directions.

Abstract: Magnetic tweezers have two jaws formed by thin magnetic films connected together via a hinge. The magnetic tweezers include a nanoparticle formed by a stack of thin magnetic films. A process for fabricating the magnetic tweezers by techniques used in the fabrication of microelectronic components is presented.

Abstract: A magneto-optic surface includes a support; at least two moving elements; each of the moving elements including at least one anchoring point to the support and at least one moving part movable with respect to the support, the moving part including at least one magnetic part; the support and the moving elements being laid out in such a way that under the effect of an external magnetic field, at least one of the moving elements moves with respect to the support such that the optical properties of the magneto-optic surface are modified.

Abstract: MRAM element having a magnetic tunnel junction including a reference layer, a storage layer, a tunnel barrier layer between the reference and storage layers, and a storage antiferromagnetic layer. The storage antiferromagnetic layer has a first function of exchange-coupling a storage magnetization of the storage layer and a second function of heating the magnetic tunnel junction when a heating current in passed in the magnetic tunnel junction. The MRAM element has better data retention and low writing temperature.

Abstract: A magnetic logic unit (MLU) cell includes a first and second magnetic tunnel junction, each including a first magnetic layer having a first magnetization, a second magnetic layer having a second magnetization, and a barrier layer; and a field line for passing a field current such as to generate an external magnetic field adapted to adjust the first magnetization. The first and second magnetic layers and the barrier layer are arranged such that the first magnetization is magnetically coupled antiparallel with the second magnetization through the barrier layer. The MLU cell also includes a biasing device arranged for applying a static biasing magnetic field oriented substantially parallel to the external magnetic field such as to orient the first magnetization at about 90° relative to the second magnetization, the first and second magnetizations being oriented symmetrically relative to the direction of the external magnetic field.

Abstract: A magnetic logic unit (MLU) cell includes a first magnetic tunnel junction and a second magnetic tunnel junction, each magnetic tunnel junction including a first magnetic layer having a first magnetization, a second magnetic layer having a second magnetization, and a tunnel barrier layer between the first and second layer. A field line for passing a field current such as to generate an external magnetic field is adapted to switch the first magnetization. The first magnetic layer is arranged such that the magnetic tunnel junction magnetization varies linearly with the generated external magnetic field. An MLU amplifier includes a plurality of the MLU cells. The MLU amplifier has large gains, extended cut off frequencies and improved linearity.

Abstract: A thermally assisted switching MRAM element including a magnetic tunnel junction including a reference layer having a reference magnetization; a storage layer having a storage magnetization; a tunnel barrier layer included between the storage layer and the reference layer; and a storage antiferromagnetic layer exchange-coupling the storage layer such as to pin the storage magnetization at a low temperature threshold and to free it at a high temperature threshold. The antiferromagnetic layer includes: at least one first antiferromagnetic layer having a first storage blocking temperature, and at least one second antiferromagnetic layer having a second storage blocking temperature; wherein the first storage blocking temperature is below 200° C. and the second storage blocking temperature is above 250° C. The MRAM element combines better data retention compared with known MRAM elements with low writing mode operating temperature.

Abstract: A thermally-assisted magnetic writing device includes at least one magnetic element including: a reference layer having a stable vortex magnetisation configuration; a device to create a magnetic field to reversibly move the vortex core in the plane of the reference layer; a storage layer having a variable magnetisation configuration; a non-magnetic spacer that separates and magnetically decouples the reference layer and the storage layer; an antiferromagnetic pinning layer in contact with the storage layer, the antiferromagnetic layer being capable of pinning the magnetisation configuration of the storage layer, the storage layer having at least two storage levels corresponding to two pinned magnetisation configurations; a device to heat the antiferromagnetic pinning layer such that when heated, the temperature of the antiferromagnetic pinning layer exceeds its blocking temperature such that the magnetisation configuration of the storage layer is no longer pinned when warm.

Abstract: A magnetic thermally-assisted switching device includes a reference layer, a storage layer magnetised along a variable direction, a spacer that separates the reference layer and the storage layer, and magnetically decouples them, a device for heating the pinning layer so that, during heating, the temperature of the pinning layer exceeds its blocking temperature such that the direction of magnetisation of the storage layer is no longer pinned, a device for applying a writing magnetic torque tending to align the magnetisation of the storage layer along one of two stable magnetisation directions once the blocking temperature is reached. The device also includes a device for applying a magnetic polarisation field at least during the heating phase before the blocking temperature is reached such that the direction of magnetisation of the storage layer is always along the direction of the magnetic polarisation field at the moment that the blocking temperature is reached.

Abstract: A thermally assisted magnetic writing device including a first magnetic layer known as the “reference layer,” a second magnetic layer known as the “storage layer” that presents a variable magnetization direction, a spacer situated between the reference layer and the storage layer and a first antiferromagnetic layer in contact with the storage layer, the first antiferromagnetic layer being able to trap the magnetization direction of the storage layer. The magnetic device also includes a stabilization layer made of a ferromagnetic material, the stabilization layer being in contact with the first antiferromagnetic layer.

Abstract: A spin transfer oscillator including a magnetic stack including at least two magnetic layers, at least one of the two magnetic layers is an oscillating layer that has variable direction magnetization and a current supply device configured to cause the flow of a current of electrons perpendicularly to the plane of the magnetic stack. The magnetic stack includes a device to generate inhomogeneities of current at the level of the surface of the oscillating layer and the intensity of the current supplied by the supply device is selected such that the magnetization of the oscillating layer has a consistent magnetic configuration, the magnetic configuration oscillating as a whole at the same fundamental frequency.

Abstract: A magnetic device includes a reference layer, the magnetization direction of which is fixed, and a storage layer, the magnetization direction of which is variable. In a write mode, the magnetization direction of the storage layer is changed so as to store a “1” or a “0” in the storage layer. In a reading mode, the resistance of the magnetic device is measured so as to know what is stored in the storage layer. The magnetic device also includes a control layer, the magnetization direction of which is variable. The magnetization direction of the control layer is controlled so as to increase the effectiveness of the spin-transfer torque in the event writing to the storage layer is desired, and to decrease the effectiveness of the spin-transfer torque in the event reading the information contained in the storage layer, without modifying the information, is desired.