Abstract: An apparatus and method achieves the submersiontype processing of silicon wafers in a manufacturing process for the fabrication of semiconductor devices therefrom. The silicon wafer is uniformly flooded with the process fluid in a manner which prevents impingement thereof during chemical processing, such as wet etching, cleaning, photoresist developing and the like. Upon flooding the silicon wafer, a gas pocket is formed between a portion of the lower surface of the wafer and an adjacent portion of vacuum chuck to which the wafer is mounted. The resulting gas pocket prevents accumulation of processed fluid therein to facilitate spin drying of the wafer.