Patents by Inventor Bernard Ho

Bernard Ho has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Reconfigurable ECC for memory
    Patent number: 9654148
    Abstract: According to one general aspect, an apparatus may include a memory and a reconfigurable error correction array. The memory may be configured to store data. The reconfigurable error correction array may be configured to provide a plurality of levels of error correction to the memory based, at least in part, upon a number of errors detected within the memory.
    Type: Grant
    Filed: January 6, 2015
    Date of Patent: May 16, 2017
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Weifeng Zhao, Shupeng Sun, Jianfeng Liu, Ming Zhang, Bernard Ho
  • RECONFIGURABLE ECC FOR MEMORY
    Publication number: 20160196179
    Abstract: According to one general aspect, an apparatus may include a memory and a reconfigurable error correction array. The memory may be configured to store data. The reconfigurable error correction array may be configured to provide a plurality of levels of error correction to the memory based, at least in part, upon a number of errors detected within the memory.
    Type: Application
    Filed: January 6, 2015
    Publication date: July 7, 2016
    Inventors: Weifeng ZHAO, Shupeng SUN, Jianfeng LIU, Ming ZHANG, Bernard HO
  • Thin capacitive structure
    Patent number: 7098501
    Abstract: A capacitor structure in a semiconductor device is provided. The capacitor structure includes a first power rail on a topmost level of the semiconductor device, and a second power rail on the topmost level of the semiconductor device. The capacitor structure also includes a dielectric layer disposed over at least a portion of one of the first power rail and the second power rail. The capacitor structure further includes a conductive layer disposed over and between the first power rail and the second power rail where the conductive layer is in electrical contact with the power rail not having the dielectric layer, and the conductive layer is disposed over the dielectric layer.
    Type: Grant
    Filed: February 5, 2003
    Date of Patent: August 29, 2006
    Assignee: Sun Microsystems, Inc.
    Inventors: Weiran Kong, Bernard Ho, David Greenhill, Sudhakar Bobba
  • Metal insulator metal capacitor
    Publication number: 20040150026
    Abstract: A capacitor structure in a semiconductor device is provided. The capacitor structure includes a first power rail on a topmost level of the semiconductor device, and a second power rail on the topmost level of the semiconductor device. The capacitor structure also includes a dielectric layer disposed over at least a portion of one of the first power rail and the second power rail. The capacitor structure further includes a conductive layer disposed over and between the first power rail and the second power rail where the conductive layer is in electrical contact with the power rail not having the dielectric layer, and the conductive layer is disposed over the dielectric layer.
    Type: Application
    Filed: February 5, 2003
    Publication date: August 5, 2004
    Applicant: Sun Microsystems, Inc.
    Inventors: Weiran Kong, Bernard Ho, David Greenhill, Sudhakar Bobba