Abstract: Polycide structures are etched with silicon tetrachloride. The etch is preferably carried out at a pressure of about 20 to 60 mtorr and overetching to remove stringers is then carried out at an increased pressure, i.e. at least about 100 mtorr. There is obtained an anisotropic etch with substantially no stringers or linewidth loss. When selectivity of etch vis-a-vis an underlying layer of gate oxide must be enhanced, from about 60 to 90 percent by volume of the silicon tetrachloride is replaced with chlorine just prior to completion of the etch.

Abstract: Novel copolymers comprising a compound containing an acrylate moiety and a silicon-containing oxime ester of methacrylic acid having the formula ##STR1## are positive resist recording media which can be dry developed.

Abstract: A process for reverse etching a layer of chromium on a substrate is provided wherein a layer of resist is formed on the chromium and developed, thus exposing a portion of the chromium. The exposed chromium is passivated by backscattering from a suitable backing plate in a plasma, the resist is removed and the unpassivated chromium etched with a conventional liquid etchant. The pattern formed in the chromium layer is the opposite of that original formed in the resist material.

Abstract: An improved plasma etching apparatus having a light pipe inserted through the chamber wall for coupling light emitted by different chemical species out of the chamber. The light pipe collects the emission directly or after reflection from the coated surface of a substrate. Stabilization of the intensity of the collected emission is indicative of the end point of the etching process.The invention includes a method for detecting the end point of the etching process by monitoring the intensity of light emitted by a component of a gas contained in the chamber which passes out of the chamber through the light pipe. The light may be coupled directly into the light pipe or the light pipe may be so positioned as to detect the emitted light after it is reflected from the surface of the substrate. The intensity of the light is monitored until it stabilizes, indicating that the etching process is complete.