Abstract: An integrated circuit includes a die having a device layer. An insulating layer is disposed over the device layer. A die street defines the outermost bounds of the die. A voltage divider network including a plurality of resistive elements derives a plurality of predetermined bias voltages. A field plate termination includes a plurality of field plates disposed on the oxide layer and are laterally spaced apart relative to each other and relative to the die street. Each of the plurality of field plates is electrically connected to a corresponding bias voltage. The bias voltage applied to a given field plate is determined by and increases with the proximity of that field plate relative to the die street.

Abstract: An IGBT has striped cell with source stripes 2a, 2b continuous or segmented along the length of the base stripe 3. The opposite stripes are periodically connected together by the N+ contact regions 20 to provide channel resistance along the width of the source stripes 2a, 2b. For continuous stripes the resistance between two sequential contact areas 20a, 20b is greatest in the middle and current concentrates near the source contact regions 20. The wider the spacing between the contacts 20, the larger the resistive drop to the midpoint between two N+ contacts 20.

Abstract: An IGBT has a thick buffer region with increased doping to improve self-clamped inductive switching and device manufacture. A planar or trench gate IGBT has a buffer layer more than 25 microns thick. The buffer layer is doped high enough so that its carriers are more numerous than minority carriers, particularly at the transition between the N buffer & N drift region.

Abstract: An integrated circuit includes a die having a device layer. An insulating layer is disposed over the device layer. A die street defines the outermost bounds of the die. A voltage divider network including a plurality of resistive elements derives a plurality of predetermined bias voltages. A field plate termination includes a plurality of field plates disposed on the oxide layer and are laterally spaced apart relative to each other and relative to the die street. Each of the plurality of field plates is electrically connected to a corresponding bias voltage. The bias voltage applied to a given field plate is determined by and increases with the proximity of that field plate relative to the die street.

Abstract: An IGBT has striped cell with source stripes 2a, 2b continuous or segmented along the length of the base stripe 3. The opposite stripes are periodically connected together by the N+ contact regions 20 to provide channel resistance along the width of the source stripes 2a, 2b. For continuous stripes the resistance between two sequential contact areas 20a, 20b is greatest in the middle and current concentrates near the source contact regions 20. The wider the spacing between the contacts 20, the larger the resistive drop to the midpoint between two N+ contacts 20.

Abstract: An IGBT has a thick buffer region with increased doping to improve self-clamped inductive switching and device manufacture. A planar or trench gate IGBT has a buffer layer more than 25 microns thick. The buffer layer is doped high enough so that its carriers are more numerous than minority carriers, particularly at the transition between the N buffer & N drift region.