Patents by Inventor Bernard K. Bischoff

Bernard K. Bischoff has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for tailoring oxygen precipitate particle density and distribution silicon wafers
    Patent number: 4437922
    Abstract: A wide precipitate-free-zone (PFZ) is formed at the surface of a semiconductor substrate and at the same time a high density of oxygen precipitate particles are produced beneath at the surface PFZ by a two step annealing process involving a first cycle of very rapidly heating the wafers to a first high temperature and a second cycle of very slowly heating the wafers to a second high temperature.
    Type: Grant
    Filed: March 26, 1982
    Date of Patent: March 20, 1984
    Assignee: International Business Machines Corporation
    Inventors: Bernard K. Bischoff, William J. Patrick, Thomas H. Strudwick