Abstract: A method of manufacturing by liquid epitaxy III-V semiconductor crystals comprising a layer having isoelectronic nitrogen trapping centers.The method is characterized in that the deposition of the nitrogen-doped layer is succeeded by the deposition of a deep layer containing less nitrogen doping after which a p-n junction is formed in the first layer.

Abstract: A method for the successive epitaxial deposition on a semiconductor substrate of a first semiconductor layer and at least one further semiconductor layer, said layers differing mutually as to at least their conductivity properties and having been obtained by crystallization from a material in the liquid phase, comprising the steps of providing at least during the whole period of the growth of said first epitaxial layer at least one dopant in a container which is present inside said space at a part thereof removed from said thermal radiation and is independent of the said crucible, said container being connected to means present outside said space for the independent movement of said container, after the growth of the first epitaxial layer arranging said container above said crucible and turning it upside down to provide to said material at least once an extra addition of said at least one dopant, and forming said further layer with said at least one dopant.