Abstract: The invention described is a method of forming an improved dielectric material by adding lead to an original perovskite material having an original critical grain size to form a lead enhanced perovskite material, then forming a layer of the lead enhanced perovskite material having an average grain size less than the original critical grain size whereby the dielectric constant of the layer is substantially greater than the dielectric constant of the original perovskite material with an average grain size similar to the average grain size of the layer. The critical grain size, as used herein, means the largest grain size such that the dielectric constant starts to rapidly decrease with decreasing grain sizes. Preferably, the lead enhanced perovskite material is further doped with one or more acceptor dopants whereby the resistivity is substantially increased and/or the loss tangent is substantially decreased.

Abstract: A semiconductor device and process for making the same are disclosed which incorporate boron, which has been found to be substantially insoluble in BST, into a BST dielectric film 24. Dielectric film 24 is preferably disposed between electrodes 18 and 26 (which preferably have a Pt layer contacting the BST) to form a capacitive structure with a relatively high dielectric constant and relatively low leakage current. Boron included in a BST precursor may be used to form boron oxide in a second phase 30, which is distributed in boundary regions between BST crystals 28 in film 24. It is believed that the inclusion of boron allows for BST grains of a desired size to be formed at lower temperature, and also reduces the leakage current of the capacitive structure.

Abstract: The invention forms improved ferroelectric (or pyroelectric) material by doping an intrinsic perovskite material having an intrinsic ferroelectric (or pyroelectric) critical grain size with one or more donor dopants, then forming a layer of the donor doped perovskite material having an average grain size less than the intrinsic ferroelectric (or pyroelectric) critical gran size whereby the remanent polarization (or pyroelectric figure of merit) of the layer is substantially greater than the remanent polarization (or pyroelectric figure of merit) of the intrinsic perovskite material with an average grain size similar to the average grain size of the layer. The critical ferroelectric (or pyroelectric) grain size, as used herein, means the largest grain size such that the remanent polarization (or pyroelectric figure of merit) starts to rapidly decrease with decreasing grain sizes.

Abstract: A semiconductor device and process for making the same are disclosed which incorporate a relatively large percentage of erbium dopant (1 to 5%) into a BST dielectric film 24 with small grain size (e.g. 10 nm to 50 nm). Dielectric film 24 is preferably disposed between electrodes 18 and 26 (which preferably have a Pt layer contacting the BST) to form a capacitive structure with a relatively high dielectric constant and relatively low leakage current. Apparently, properties of the thin film deposition and small grain size. including temperatures well below bulk BST sintering temperatures, allow the film to support markedly higher defect concentrations without erbium precipitation than are observed for bulk BST. For erbium doping levels generally between 1% and 3%, over an order of magnitude decrease in leakage current (compared to undoped BST) may be achieved for such films.

Abstract: The invention described is an improved dielectric material formed as a film on the surface of a substrate by adding lead to an original perovskite material having an original critical grain size to form a lead enhanced perovskite material, then forming a layer of the lead enhanced perovskite material having an average grain size less than the original critical grain size whereby the dielectric constant of the layer is substantially greater than the dielectric constant of the original perovskite material with an average grain size similar to the average grain size of the layer. The critical grain size, as used herein, means the largest grain size such that the dielectric constant starts to rapidly decrease with decreasing grain sizes. Preferably, the lead enhanced perovskite material is further doped with one or more acceptor dopants whereby the resistivity is substantially increased and/or the loss tangent is substantially decreased. Preferably, the original perovskite material has a chemical composition ABO.

Abstract: A semiconductor device and process for making the same are disclosed which incorporate a relatively large percentage of erbium dopant (1 to 5%) into a BST dielectric film 24 with small grain size (e.g. 10 nm to 50 nm). Dielectric film 24 is preferably disposed between electrodes 18 and 26 (which preferably have a Pt layer contacting the BST) to form a capacitive structure with a relatively high dielectric constant and relatively low leakage current. Apparently, properties of the thin film deposition and small grain size, including temperatures well below bulk BST sintering temperatures, allow the film to support markedly higher defect concentrations without erbium precipitation than are observed for bulk BST. For erbium doping levels generally between 1% and 3%, over an order of magnitude decrease in leakage current (compared to undoped BST) may be achieved for such films.

Abstract: A semiconductor device and process for making the same are disclosed which incorporate boron, which has been found to be substantially insoluble in BST, into a BST dielectric film 24. Dielectric film 24 is preferably disposed between electrodes 18 and 26 (which preferably have a Pt layer contacting the BST) to form a capacitive structure with a relatively high dielectric constant and relatively low leakage current. Boron included in a BST precursor may be used to form boron oxide in a second phase 30, which is distributed in boundary regions between BST crystals 28 in film 24. It is believed that the inclusion of boron allows for BST grains of a desired size to be formed at lower temperature, and also reduces the leakage current of the capacitive structure.

Abstract: An improved dielectric material and microcircuit having capacitive elements which employ such a dielectric material are disclosed. The dielectric material comprises polycrystalline barium strontium titanate doped with at least one donor element and having a grain size of less than 1 micron. In the preferred embodiments, the donor element may be Nb, Ta, Bi, Sb, Y, La, Ce, Pr, Nd, Sm, Gd, Tb, Dy, Ho, Er or a combination thereof. The material may be further doped with an acceptor dopant to control resistivity. The microcircuit comprises capacitors having such a dielectric material and connected to a semiconductor substrate which contains embedded circuitry for reading the voltage across a capacitor.

Abstract: A semiconductor device and process for making the same are disclosed which incorporate a relatively large percentage of holmium dopant (0.5 to 5%) into a BST dielectric film 24 with small grain size (e.g. 10 nm to 50 nm). Dielectric film 24 is preferably disposed between electrodes 18 and 26 (which preferably have a Pt layer contacting the BST) to form a capacitive structure with a relatively high dielectric constant and relatively low leakage current. Apparently, properties of the thin film deposition and small grain size, including temperatures well below bulk BST sintering temperatures, allow the film to support markedly higher defect concentrations without holmium precipitation than are observed for bulk BST. For holmium doping levels generally between 0.5 and 5% (compensated with titanium and/or manganese), better than 50% improvement in dielectric constant and two to six orders of magnitude reduction in leakage current (compared to undoped BST) have been observed for such films.

Abstract: An improved pyroelectric material comprises a polycrystalline material doped with at least one donor element such that the polycrystalline material has a grain size less than 10 .mu.m (or 5 .mu.m) and a Figure of Merit greater than 90 nC/(cm.sup.2* K). In the preferred embodiments the polycrystalline material is barium strontium titanate or calcium-substituted barium strontium titanate. The donor element may be Nb, Ta, Bi, Sb, Y, La, Ce, Pr, Nd, Sm, Gd, Tb, Dy, Ho, Er or a combination thereof. The material may additionally be doped with an accepter such as Co, Cu, Fe, Mn, Ru, Al, Ga, Mg, Sc, K, Na, U, In, Mg, Ni, Yb or a combination thereof to control the resistivity. Other structures and methods are also disclosed.

Abstract: Titanate ceramic materials are made by forming a common solution (10) of barium acetate, strontium acetate, isopropyl titanate, lactic acid and water, forming a mist of particles of approximately 50 um or smaller, directing a carrier stream of gas (14) through the mist into a reaction zone in a furnace (20) where the material is pyrolyzed and then collected as a powder in a filter (24) or deposited onto a substrate. The tetra-isopropyl titanate and lactic acid may be replaced by commercially available titanium ammonium lactate. In a first embodiment the carrier gas is an oxidizing gas while in a second embodiment it is an inert gas resulting in powder having greater density.

Abstract: An improved pyroelectric material comprises a polycrystalline material doped with at least one donor element such that the polycrystalline material has a grain size less than 10 .mu.m (or 5 .mu.m) and a Figure of Merit greater than 90 nC/(cm.sup.2.K). In the preferred embodiments the polycrystalline material is barium strontium titanate or calcium-substituted barium strontium titanate. The donor element may be Nb, Ta, Bi, Sb, Y, La, Ce, Pr, Nd, Sm, Gd, Tb, Dy, Ho, Er or a combination thereof. The material may additionally be doped with an acceptor such as Co, Cu, Fe, Mn, Ru, Al, Ga, Mg, Sc, K, Na, U, In, Mg, Ni, Yb or a combination thereof to control the resistivity. Other structures and methods are also disclosed.

Abstract: A humidity sensor composed of interdigitated electrodes and a material therebetween which is composed of Nafion wherein H+ cites have undergone ion exchange with at least one of NH4+ and Li+, Na+, Ag+ and Mg+.

Abstract: A humidity sensor composed of interdigitated electrodes and a material therebetween which is composed of perfluorosulfonic acid substituted poly (tetrafluoroethylene) copolymer wherein H+ sites have undergone ion exchange with at least one of NH4+ and Li+, Na+, Ag+ and Mg+.

Abstract: A resistor particularly useful as a multiphase, self-regulating fluid heater has passages extending through a body of ceramic resistance material of positive temperature coefficient of resistivity (PTC) for heating fluid adapted to pass therethrough. Several embodiments are provided with electrically conductive coatings formed on inner walls of the passages with the passage walls defining thin webs of the resistance material having uniform thickness from end to end. The passages are arranged in a plurality of sets with the conductive coating on the walls of the passages of each set interconnected and adapted for electrical connection with a respective electrical phase. The passages of the sets are alternated relative to one another throughout the body with a passage of one set immediately adjacent only to passages of other sets. The passages are configured in different embodiments including hexagonal, triangular and rectangular as seen in plan view showing one end of the body.

Abstract: A body comprising a ceramic electrical resistance material of positive temperature coefficient of resistivity adapted to display a sharp increase in resistivity when heated to a selected temperature has passages extending through the body between opposite ends of the body for passing fluid through the passages in heat-exchange relationship to the body and has means electrically contacting spaced-apart portions of the body for directing electrical current through the body to self-heat the body. The body is made with an improved structure in an improved manner and is particularly adapted for use as a self-regulated fluid heater within a small or irregularly-shaped conduit or the like.

Abstract: A fuel supply system having means for furnishing a mixture of air and alcohol or gasohol fuels to an automotive engine has a self-regulating, ceramic, electrical resistance heater for enhancing fuel evaporation during cold engine starting and incorporates a heater of improved structure to maintain stable heating properties in the alcohol-based system over a long service life.

Abstract: A compact resistor device comprises a body of ceramic material of positive temperature coefficient of resistivity having a large number of passages extending through the body between opposite ends of the body, thereby forming very thin webs of the resistor material between adjacent passages. Coatings are formed on the resistor material along the inner walls of the passages to serve as ohmic contacts. The coatings in alternate passages are connected together at one end of the resistor device and the coatings in the other passages are connected together at the opposite end of the device to serve as device terminals. When the device terminals are connected to a power source, current flows through very thin webs of resistor material between ohmic contacts in adjacent body passages. The resistor device is particularly useful in current limiting applications requiring low, room-temperature resistance and in heat-exchanger applications where a fluid to be heated is directed through the passages.

Abstract: A compact resistor device comprises a body of ceramic material of positive temperature coefficient of resistivity having a large number of passages extending through the body between opposite ends of the body, thereby forming very thin webs of the resistor material between adjacent passages. Coatings are formed on the resistor material along the inner walls of the passages to serve as ohmic contacts. The coatings in alternate passages are connected together at one end of the resistor device and the coatings in the other passages are connected together at the opposite end of the device to serve as device terminals. When the device terminals are connected to a power source, current flows through very thin webs of resistor material between ohmic contacts in adjacent body passages. The resistor device is particularly useful in current limiting applications requiring low, room-temperature resistance and in heat-exchanger applications where a fluid to be heated is directed through the passages.

Abstract: A temperature sensor particularly adapted for use with digital displays or controls comprises an oscillator circuit coupled to a capacitor formed of ferroelectric material in order to provide a linear relation of frequency with temperature. Both chip and multilayer capacitors are shown to be useful as the sensing element.