Abstract: Microelectromechanical systems (MEMS) switches are disclosed. Parallel configurations of back-to-back MEMS switches are disclosed in some embodiments. An isolation connection of constant electrical potential may be made to a midpoint of the back-to-back switches. In some embodiments, a separate MEMS switch is provided as a shunt switch for the main MEMS switch. MEMS switch device configurations having multiple switchable signal paths each coupling a common input electrode to a respective output electrode are also disclosed. The MEMS switch device includes shunt switches each coupling a respective output electrode to a reference potential. The presence of a shunt switch coupled to an output electrode enhances the isolation of the signal path corresponding to that output electrode when the path is open.

Abstract: The disclosed technology generally relates to forming metallization structures for integrated circuit devices by plating, and more particularly to plating metallization structures that are thicker than masking layers used to define the metallization structures. In one aspect, a method of metallizing an integrated circuit device includes plating a first metal on a substrate in a first opening formed through a first masking layer, where the first opening defines a first region of the substrate, and plating a second metal on the substrate in a second opening formed through a second masking layer, where the second opening defines a second region of the substrate. The second opening is wider than the first opening and the second region encompasses the first region of the substrate.

Abstract: The disclosed technology generally relates to forming metallization structures for integrated circuit devices by plating, and more particularly to plating metallization structures that are thicker than masking layers used to define the metallization structures. In one aspect, a method of metallizing an integrated circuit device includes plating a first metal on a substrate in a first opening formed through a first masking layer, where the first opening defines a first region of the substrate, and plating a second metal on the substrate in a second opening formed through a second masking layer, where the second opening defines a second region of the substrate. The second opening is wider than the first opening and the second region encompasses the first region of the substrate.

Abstract: The disclosed technology generally relates to forming metallization structures for integrated circuit devices by plating, and more particularly to plating metallization structures that are thicker than masking layers used to define the metallization structures. In one aspect, a method of metallizing an integrated circuit device includes plating a first metal on a substrate in a first opening formed through a first masking layer, where the first opening defines a first region of the substrate, and plating a second metal on the substrate in a second opening formed through a second masking layer, where the second opening defines a second region of the substrate. The second opening is wider than the first opening and the second region encompasses the first region of the substrate.

Abstract: Radio frequency (RF) isolators are described, coupling circuit domains operating at different voltages. The RF isolator may include a transmitter which emits a directional signal toward a receiver. Layers of materials having different dielectric constants may be arranged to confine the emission along a path to the receiver. The emitter may be an antenna having an aperture facing the receiver.

Abstract: The disclosed technology generally relates to forming metallization structures for integrated circuit devices by plating, and more particularly to plating metallization structures that are thicker than masking layers used to define the metallization structures. In one aspect, a method of metallizing an integrated circuit device includes plating a first metal on a substrate in a first opening formed through a first masking layer, where the first opening defines a first region of the substrate, and plating a second metal on the substrate in a second opening formed through a second masking layer, where the second opening defines a second region of the substrate. The second opening is wider than the first opening and the second region encompasses the first region of the substrate.

Abstract: A microelectronic circuit having at least one component adjacent a carrier that is not a semiconductor or sapphire. The circuit includes a component bearing stack of one or more layers having one or more passive components, which are adjacent or bonded to the carrier. In certain embodiments, the circuit also includes an etch stop layer of a material having a slower etch rate than silicon and a bond layer bonding the carrier and the component bearing one or more layers.

Abstract: An isolator device is provided comprising a body of first dielectric material between the first and second conductors, such as primary and secondary coils of a micro-transformer. A region of second dielectric material is provided between the body of first dielectric material and at least one of the first and second electrodes, wherein the second dielectric material has a higher relative permittivity than the first dielectric material. This provides enhances ability to withstand the Electric fields generated at the edge of a conductor. The body of the first dielectric can be tapered to provide stress relief to prevent the second dielectric material developing stress cracks.

Abstract: A magnetic isolator is described. The magnetic isolator may comprise a top conductive coil, a bottom conductive coil, and a dielectric layer separating the top conductive coil from the bottom conductive coil. The top conductive coil may comprise an outermost portion having multiple segments. The segments may be configured to reduce the peak electric field in a region of the dielectric layer near the outer edge of the top conductive coil. The top conductive coil may comprise a first lateral segment, and a second lateral segment that is laterally offset with respect to the first lateral segment. The first lateral segment may be closer to the center of the top conductive coil than the second lateral segment, and may be closer to the bottom conductive coil than the second lateral segment. The magnetic isolator may be formed using microfabrication techniques.

Abstract: An isolator device and a corresponding method of forming the isolator device to include first and second electrodes, a layer of first dielectric material between the first and second electrodes, and at least one region of second dielectric material between the layer of first dielectric material and at least one of the first and second electrodes. The second dielectric material has a higher relative permittivity than the first dielectric material.

Abstract: A MEMS switch device including: a substrate layer; an insulating layer formed over the substrate layer; and a MEMS switch module having a plurality of contacts formed on the surface of the insulating layer, wherein the insulating layer includes a number of conductive pathways formed within the insulating layer, the conductive pathways being configured to interconnect selected contacts of the MEMS switch module.

Abstract: Radio frequency (RF) isolators are described, coupling circuit domains operating at different voltages. The RF isolator may include a transmitter which emits a directional signal toward a receiver. Layers of materials having different dielectric constants may be arranged to confine the emission along a path to the receiver. The emitter may be an antenna having an aperture facing the receiver.

Abstract: Several features are disclosed that improve the operating performance of MEMS switches such that they exhibit improved in-service life and better control over switching on and off.

Abstract: An isolator device and a corresponding method of forming the isolator device to include first and second electrodes, a layer of first dielectric material between the first and second electrodes, and at least one region of second dielectric material between the layer of first dielectric material and at least one of the first and second electrodes. The second dielectric material has a higher relative permittivity than the first dielectric material.

Abstract: An isolator device is provided comprising a body of first dielectric material between the first and second conductors, such as primary and secondary coils of a micro-transformer. A region of second dielectric material is provided between the body of first dielectric material and at least one of the first and second electrodes, wherein the second dielectric material has a higher relative permittivity than the first dielectric material. This provides enhances ability to withstand the Electric fields generated at the edge of a conductor. The body of the first dielectric can be tapered to provide stress relief to prevent the second dielectric material developing stress cracks.

Abstract: A MEMS switch has a base formed from a substrate with a top surface and an insulator layer formed on at least a portion of the top surface. Bonding material secures a cap to the base to form an interior chamber. The cap effectively forms an exterior region of the base that is exterior to the interior chamber. The MEMS switch also has a movable member (in the interior chamber) having a member contact portion, an internal contact (also in the interior chamber), and an exterior contact at the exterior region of the base. The contact portion of the movable member is configured to alternatively contact the interior contact. A conductor at least partially within the insulator layer electrically connects the interior contact and the exterior contact. The conductor is spaced from and electrically isolated from the bonding material securing the cap to the base.

Abstract: A micromachined switch has a cavity with an atmosphere configured to reduce sparking between switch contacts during opening and closing operations.

Abstract: A MEMS switch has a base formed from a substrate with a top surface and an insulator layer formed on at least a portion of the top surface. Bonding material secures a cap to the base to form an interior chamber. The cap effectively forms an exterior region of the base that is exterior to the interior chamber. The MEMS switch also has a movable member (in the interior chamber) having a member contact portion, an internal contact (also in the interior chamber), and an exterior contact at the exterior region of the base. The contact portion of the movable member is configured to alternatively contact the interior contact. A conductor at least partially within the insulator layer electrically connects the interior contact and the exterior contact. The conductor is spaced from and electrically isolated from the bonding material securing the cap to the base.

Abstract: Several features are disclosed that improve the operating performance of MEMS switches such that they exhibit improved in-service life and better control over switching on and off.

Abstract: A MEMS switch device including: a substrate layer; an insulating layer formed over the substrate layer; and a MEMS switch module having a plurality of contacts formed on the surface of the insulating layer, wherein the insulating layer includes a number of conductive pathways formed within the insulating layer, the conductive pathways being configured to interconnect selected contacts of the MEMS switch module.