Abstract: A chamber for annealing a semi-conductor material of II-VI type having a first area for storing an element of group II of the periodic table and a second area designed to receive the semi-conductor material of II-VI type. The chamber s equipped with a separating partition at the level of an intermediate area. This separating partition is provided with a passage aperture equipped with gas anti-reverse flow means to ensure one-way passage of the element of group II of the periodic table, in vapor phase, from the first area to the second area. This chamber is heated by heating means enabling the two areas to be heated independently.

Abstract: A method for eliminating precipitates contained in an II-VI solid semiconductor material, in which the solid semiconductor material is a congruent sublimation solid semiconductor material, the method including: providing an inert gas flow; heating the solid semiconductor material under the inert gas flow up to a temperature T, between a first temperature T1, corresponding to compound II-VI/element VI eutectic, and a second temperature T2, corresponding to maximum congruent sublimation temperature; maintaining the solid semiconductor material at this temperature T under a neutral gas flow for a time period sufficient to eliminate the precipitates; cooling the solid semiconductor material under the inert gas flow from temperature T to ambient temperature, at a rate such that, during the cooling, the solid semiconductor material merges with its congruent sublimation line; and recovering a precipitate-free solid semiconductor material.

Abstract: A chamber for annealing a semi-conductor material of II-VI type having a first area for storing an element of group II of the periodic table and a second area designed to receive the semi-conductor material of II-VI type. The chamber s equipped with a separating partition at the level of an intermediate area. This separating partition is provided with a passage aperture equipped with gas anti-reverse flow means to ensure one-way passage of the element of group II of the periodic table, in vapor phase, from the first area to the second area. This chamber is heated by heating means enabling the two areas to be heated independently.

Abstract: Method for eliminating the precipitates contained in a II-VI solid semiconductor material by annealing, in which said solid semiconductor material is a congruent sublimation solid semiconductor material, and in which the following successive steps are carried out: the solid semiconductor material is heated under an inert gas flow up to a temperature T, between a first temperature T1, corresponding to the compound II-VI/element VI eutectic, and a second temperature T2, corresponding to maximum congruent sublimation temperature; the solid material is held at this temperature T under a neutral gas flow for a time period sufficient to eliminate the precipitates; the solid semiconductor material is cooled under an inert gas flow from temperature T to ambient temperature, at a rate such that, during cooling, the solid material merges with its congruent sublimation line; the precipitate-free solid semiconductor material is recovered.

Abstract: A growth method for a bulk II-VI type semiconductor material, including at least a first component and a second component. The method supplies in a crucible a charge including the components, with proportions of the components being such that the first component is used as a solvent. The crucible is then laced in an open tube reactor. The reactor temperature is then raised to obtain a temperature profile in the reactor ensuring the melting of the charge in the crucible and with the evaporation of the first component beginning, with the pressure inside the reactor being adjusted by the circulation of a gas so that the atmospheric pressure, with the partial pressure of the first component being greater than the partial pressure of the second component.

Abstract: The invention concerns a growth method for a bulk II-VI type semiconductor material, including at least a first component and a second component, with the method including the following steps:

Abstract: A method of preparation of a ternary or quaternary alloy composed of the elements A.sup.1 A.sup.2 A.sup.3 (ternary alloy) or the elements A.sup.1 A.sup.2 A.sup.3 A.sup.4 (quaternary alloy) consists of the successive steps of preparation of one or a number of binary alloys such as A.sup.1 A.sup.2, purification of the binary alloys by zone melting, placing of the binary alloy or alloys which are in the solid state together with the other constituent elements of the alloy within a container in the presence of a solvent, crystallization of the ternary or quaternary alloy by melting all the elements within the container and recrystallization in the presence of the solvent.