Abstract: A method of making a semiconductor device which includes at least one pair of complementary vertical bipolar transistors formed on a plate having a substrate formed of two adjacent portions of opposite conductivity type forming a p-n junction therebetween. The two adjacent portions form, respectively, the collector region of a first of the transistors and the emitter region of a second of the transistors. An electrode is provided on the lower face of the substrate to connect together the two adjacent portions of the substrate. The method of the invention is particularly applicable to making mixed Darlington amplifier structures and push-pull amplifiers composed of such structures.

Abstract: A multilayer power transistor includes an emitter zone having two layers of different doping levels, a less highly doped layer and a more highly doped surface region. The base zone of the transistor includes a central base region of higher doping level than that of the remainder of the base zone and which extends into the emitter surface region. This configuration results in a structure which exhibits a defocalization effect at any current level and improved secondary breakdown characteristics.

Abstract: A semiconductor device includes at least one pair of complementary vertical bipolar transistors formed on a plate having a substrate formed of two adjacent portions of opposite conductivity type forming a p-n junction therebetween. The two adjacent portions form, respectively, the collector region of a first of the transistors and the emitter region of a second of the transistors. An electrode is provided on the lower face of the substrate to connect together the two adjacent portions of the substrate. The invention is particularly applicable to mixed Darlington amplifier structures and push-pull amplifiers composed of such structures.

Abstract: The invention relates to a mesa transistor comprising a highly doped substrate, on which there is provided a lower doped collector region of the same conductivity type, a base zone of the opposite conductivity type provided on said collector region and an emitter zone provided in the base region with the mesa being formed by a recess in a flat upper face of the semiconductor plate which recess fully encloses the base zone and extends into the substrate. According to the invention the recess consists of a first portion extending over a part of the thickness of said collector region only, and a groove extending from the bottom of this first portion into the substrate. The wall and the bottom of this last-mentioned groove preferably everywhere adjoin a thin, highly doped semiconductor zone of the same conductivity type as the substrate.

Abstract: A bipolar transistor includes an emitter zone having two regions of different doping levels. The more highly doped region is a surface-adjoining region located in the lower-doped region, extending only partially through the lower-doped region and laterally surrounding a central portion thereof. The transistor also includes a surface-adjoining base contact zone which surrounds the emitter zone and is laterally spaced apart from the more highly-doped region of the emitter zone. Additionally, a surface-adjoining conductive electrode is provided for contacting both the more highly-doped emitter region and the central portion of the less-highly doped region of the emitter zone. This configuration results in a transistor having improved reverse breakdown characteristics.

Abstract: A semiconductor device including a substrate of first conductivity type provided with an epitaxial region of the opposite conductivity type. The base of a first vertical bipolar transistor is formed by a localized epitaxial layer present above the first region, the collector of the transistor and the base of a second vertical bipolar transistor adjoining each other in the region.

Abstract: A monolithic semiconductor device comprising at least two complementary transistors, in which the base zone of a first transistor and the collector zone of a second transistor are provided in a first epitaxial layer, while the emitter zone of the second transistor, the emitter zone of the first transistor and the base zone of the second transistor are provided in a second epitaxial layer. A separation groove is provided between the transistors in the second epitaxial layer.

Abstract: A connection lug comb configuration for power semiconductor devices wherein bent lugs are drawn toward the semiconductor body resting on a heat sink base by pins having heads that engage slots in the lugs.

Abstract: A device having complementary transistors and method of manufacturing same.A monolithic device which comprises at least two transistors of opposite conductivity types.The device is provided on a substrate which is covered with an epitaxial region of the opposite conductivity type and in this region the base of a transistor is formed by a localized epitaxial layer which is present above the said region, the collector of the said transistor and the base of the other transistor adjoining each other in said region.Amplifiers of the Darlington type FIG. 4.