Patents by Inventor Bernard Roger
Bernard Roger has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20230149077Abstract: According to an aspect, there is provided a personal care device (52) for performing a light-based hair removal or photo-epilation operation on a body of a subject. The personal care device (52) comprises a housing (54) that includes a first window or opening (68), a light source configured to generate light to perform the light-based hair removal or photo-epilation operation, wherein the light source is arranged in the housing such that light emitted by the light source illuminates a part of the body, a receiving member in or on the housing (54) for receiving and retaining a consumer electronic device (62) in or on the personal care device (52), and an optical system (80) in the housing (54) for enabling an imaging unit (78) of a consumer electronic device (62) retained in the recess (60) to obtain images of a part of the body via the first window or opening (68).Type: ApplicationFiled: April 14, 2021Publication date: May 18, 2023Inventors: Edgar VAN GOOL, Felix Godfried Peter PEETERS, Marjolein Yvonne JANSEN, Eyob Atanfu AMRA, Eric Gerard Marie VAN KEMPEN, Lars Christian CASPER, Wilbert Bernard Roger PENNINGS, Tim TIELEMANS
-
Patent number: 9919790Abstract: A fire barrier laminate is provided for use in thermal and acoustical insulation systems, such as, but not limited to, those used in commercial aircraft.Type: GrantFiled: March 15, 2017Date of Patent: March 20, 2018Assignees: Unifrax I LLC, Lamart CorporationInventors: Bernard Roger Contzen, Gene Jung, Gary Shank, Robert C. Rioux, Kenneth B. Miller, Phillip Faria
-
Patent number: 9708052Abstract: A fire barrier laminate is provided for use in thermal and acoustical insulation systems, such as, but not limited to, those used in commercial aircraft.Type: GrantFiled: February 14, 2017Date of Patent: July 18, 2017Assignees: Unifrax I LLC, Lamart CorporationInventors: Bernard Roger Contzen, Gene Jung, Gary Shank, Robert C. Rioux, Kenneth B. Miller, Phillip Faria
-
Publication number: 20170183082Abstract: A fire barrier laminate is provided for use in thermal and acoustical insulation systems, such as, but not limited to, those used in commercial aircraft.Type: ApplicationFiled: March 15, 2017Publication date: June 29, 2017Inventors: Bernard Roger CONTZEN, Gene JUNG, Gary SHANK, Robert C. RIOUX, Kenneth B. MILLER, Phillip FARIA
-
Patent number: 9676168Abstract: A fire barrier laminate is provided for use in thermal and acoustical insulation systems, such as, but not limited to, those used in commercial aircraft.Type: GrantFiled: March 13, 2013Date of Patent: June 13, 2017Inventors: Bernard Roger Contzen, Gene Jung, Gary Shank, Robert C Rioux, Kenneth B Miller, Phillip Faria
-
Publication number: 20170158308Abstract: A fire barrier laminate is provided for use in thermal and acoustical insulation systems, such as, but not limited to, those used in commercial aircraft.Type: ApplicationFiled: February 14, 2017Publication date: June 8, 2017Inventors: Bernard Roger CONTZEN, Gene JUNG, Gary SHANK, Robert C. RIOUX, Kenneth B. MILLER, Phillip FARIA
-
Patent number: 4370179Abstract: A method of making a semiconductor device which includes at least one pair of complementary vertical bipolar transistors formed on a plate having a substrate formed of two adjacent portions of opposite conductivity type forming a p-n junction therebetween. The two adjacent portions form, respectively, the collector region of a first of the transistors and the emitter region of a second of the transistors. An electrode is provided on the lower face of the substrate to connect together the two adjacent portions of the substrate. The method of the invention is particularly applicable to making mixed Darlington amplifier structures and push-pull amplifiers composed of such structures.Type: GrantFiled: October 27, 1980Date of Patent: January 25, 1983Assignee: U.S. Philips CorporationInventor: Bernard Roger
-
Patent number: 4315271Abstract: A multilayer power transistor includes an emitter zone having two layers of different doping levels, a less highly doped layer and a more highly doped surface region. The base zone of the transistor includes a central base region of higher doping level than that of the remainder of the base zone and which extends into the emitter surface region. This configuration results in a structure which exhibits a defocalization effect at any current level and improved secondary breakdown characteristics.Type: GrantFiled: March 27, 1980Date of Patent: February 9, 1982Assignee: U.S. Philips CorporationInventor: Bernard Roger
-
Patent number: 4261002Abstract: A semiconductor device includes at least one pair of complementary vertical bipolar transistors formed on a plate having a substrate formed of two adjacent portions of opposite conductivity type forming a p-n junction therebetween. The two adjacent portions form, respectively, the collector region of a first of the transistors and the emitter region of a second of the transistors. An electrode is provided on the lower face of the substrate to connect together the two adjacent portions of the substrate. The invention is particularly applicable to mixed Darlington amplifier structures and push-pull amplifiers composed of such structures.Type: GrantFiled: November 13, 1978Date of Patent: April 7, 1981Assignee: U.S. Philips CorporationInventor: Bernard Roger
-
Patent number: 4249195Abstract: The invention relates to a mesa transistor comprising a highly doped substrate, on which there is provided a lower doped collector region of the same conductivity type, a base zone of the opposite conductivity type provided on said collector region and an emitter zone provided in the base region with the mesa being formed by a recess in a flat upper face of the semiconductor plate which recess fully encloses the base zone and extends into the substrate. According to the invention the recess consists of a first portion extending over a part of the thickness of said collector region only, and a groove extending from the bottom of this first portion into the substrate. The wall and the bottom of this last-mentioned groove preferably everywhere adjoin a thin, highly doped semiconductor zone of the same conductivity type as the substrate.Type: GrantFiled: November 16, 1978Date of Patent: February 3, 1981Assignee: U.S. Philips CorporationInventor: Bernard Roger
-
Patent number: 4151541Abstract: A bipolar transistor includes an emitter zone having two regions of different doping levels. The more highly doped region is a surface-adjoining region located in the lower-doped region, extending only partially through the lower-doped region and laterally surrounding a central portion thereof. The transistor also includes a surface-adjoining base contact zone which surrounds the emitter zone and is laterally spaced apart from the more highly-doped region of the emitter zone. Additionally, a surface-adjoining conductive electrode is provided for contacting both the more highly-doped emitter region and the central portion of the less-highly doped region of the emitter zone. This configuration results in a transistor having improved reverse breakdown characteristics.Type: GrantFiled: December 12, 1977Date of Patent: April 24, 1979Assignee: U.S. Philips CorporationInventor: Bernard Roger
-
Patent number: 4122482Abstract: A semiconductor device including a substrate of first conductivity type provided with an epitaxial region of the opposite conductivity type. The base of a first vertical bipolar transistor is formed by a localized epitaxial layer present above the first region, the collector of the transistor and the base of a second vertical bipolar transistor adjoining each other in the region.Type: GrantFiled: August 5, 1977Date of Patent: October 24, 1978Assignee: U.S. Philips CorporationInventors: Maurice Bonis, Bernard Roger
-
Patent number: 4065332Abstract: Solid components for hybrid propellants are disclosed, which comprise (1) a solid amine and (2) an organic binder, the binderA. being free of groups which are reactive with respect to the amine,B. being selected fromI. diene binders which may optionally contain functional groups and which can be vulcanized by reaction with sulphur,Ii. binders comprising functional groups which can be cross-linked by an epoxide- or aziridinyl-containing cross-linking agent, andIii. polyurethane binders, andC. being capable of hardening at a temperature lower than the melting point of the amine,The proportion of the binder being more than 15% by weight, based on the solid component.Type: GrantFiled: December 11, 1975Date of Patent: December 27, 1977Assignee: Societe Nationale des Poudres et ExplosifsInventors: Pierre Michel Lorson, Bernard Roger Dumas
-
Patent number: 4058825Abstract: A monolithic semiconductor device comprising at least two complementary transistors, in which the base zone of a first transistor and the collector zone of a second transistor are provided in a first epitaxial layer, while the emitter zone of the second transistor, the emitter zone of the first transistor and the base zone of the second transistor are provided in a second epitaxial layer. A separation groove is provided between the transistors in the second epitaxial layer.Type: GrantFiled: December 24, 1975Date of Patent: November 15, 1977Assignee: U.S. Philips CorporationInventors: Maurice Bonis, Bernard Roger
-
Patent number: 4013337Abstract: A connection lug comb configuration for power semiconductor devices wherein bent lugs are drawn toward the semiconductor body resting on a heat sink base by pins having heads that engage slots in the lugs.Type: GrantFiled: June 26, 1975Date of Patent: March 22, 1977Assignee: U.S. Philips CorporationInventors: Bernard Roger, Michel Ayel, Francis Debar
-
Patent number: 3959039Abstract: A device having complementary transistors and method of manufacturing same.A monolithic device which comprises at least two transistors of opposite conductivity types.The device is provided on a substrate which is covered with an epitaxial region of the opposite conductivity type and in this region the base of a transistor is formed by a localized epitaxial layer which is present above the said region, the collector of the said transistor and the base of the other transistor adjoining each other in said region.Amplifiers of the Darlington type FIG. 4.Type: GrantFiled: January 31, 1974Date of Patent: May 25, 1976Assignee: U.S. Philips CorporationInventors: Maurice Bonis, Bernard Roger
-
Patent number: D1016273Type: GrantFiled: November 1, 2022Date of Patent: February 27, 2024Assignee: Fisher & Paykel Healthcare LimitedInventors: Craig Robert Prentice, Bernard Tsz Lun Ip, Richard John Boyes, Thomas Mark Richardson, Gareth Thomas McDermott, Jonathan Mark Downey, Matthew Roger Stephenson