Abstract: A method for making a semiconductor device includes (a) providing a source of actinic radiation (601), (b) providing a mask formed from (i) a substrate that is substantially transparent to the actinic radiation, and (ii) a plurality of silicon nitride structures formed on the substrate using chemical vapor deposition and selective etching, wherein each silicon nitride structure has a transmission with respect to the actinic radiation that is within the range of about 30% to about 35%, and wherein the combination of each silicon nitride structure and the substrate imparts to the actinic radiation a phase change within the range of about 190° to about 200° (603), and (c) using the mask and the source of actinic radiation to impart a pattern to a semiconductor substrate (607, 609).

Abstract: A smoker's appliance or apparatus which reduces a quantity smoke from a cigarette during periods of time when the cigarette is not being smoked, by dissipating the heat energy and diminishing the oxygen supply to a cigarette holding receptacle.

Abstract: A photolithographic mask is adapted for use in imparting a pattern to a substrate. The pattern comprises a plurality of features. At least one of the plurality of features (201) is implemented in the mask as a phase shifting structure (205) with a unitary layer of opaque material (207) disposed thereon. The mask is utilized to impart the pattern to a layer over a semiconductor substrate.

Abstract: A method for making a semiconductor device is provided which comprises (a) providing a source of actinic radiation (601), (b) providing a reticle comprising (i) a substrate having a plurality of structures defined therein, said substrate being essentially transparent to the actinic radiation, and (ii) a layer of attenuating material disposed over at least some of said plurality of structures, wherein the layer of attenuating material has a transmission with respect to the actinic radiation that is within the range of about 5% to about 50%, and wherein the combination of the layer of attenuating material and the substrate imparts to the actinic radiation a phase change within the range of about 165° to about 225° (603), and (c) utilizing the reticle and the source of actinic radiation to impart a pattern to a semiconductor substrate (607, 609).