Patents by Inventor BERNARDETTE KUNERT
BERNARDETTE KUNERT has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20230395561Abstract: The present disclosure relates to at least one multilayer structure that is produced on a semiconductor donor wafer, by growing e.g. group III-V material in a cavity formed in a dielectric support layer. A template layer embeds the multilayer structure. The multilayer structure comprises a release layer that is accessible from the sides. The method further comprises the production of a device and the production of conductive paths connected to the device and terminating in a number of contact pads which are coplanar with a first dielectric bonding surface. The donor wafer is then bonded to a carrier wafer. TSV openings are then produced from the back side of the carrier wafer and an etchant is provided for selectively removing layers of the multilayer structure. The etchant is supplied through the TSV openings for the removal of the release layer. The donor wafer is thereby released to form separate semiconductor chips.Type: ApplicationFiled: June 2, 2023Publication date: December 7, 2023Inventors: Abhitosh Vais, Bertrand Paravais, Guillaume Boccardi, Bernardette Kunert, Yves Mols, Sachin Yadav
-
Patent number: 11655558Abstract: A method for growing at least one III/V nano-ridge on a silicon substrate in an epitaxial growth chamber. The method comprises: patterning an area on a silicon substrate thereby forming a trench on the silicon substrate; growing the III/V nano-ridge by initiating growth of the III/V nano-ridge in the trench, thereby forming and filling layer of the nano-ridge inside the trench, and by continuing growth out of the trench on top of the filling layer, thereby forming a top part of the nano-ridge, wherein at least one surfactant is added in the chamber when the nano-ridge is growing out of the trench.Type: GrantFiled: August 18, 2020Date of Patent: May 23, 2023Assignee: Imec VZWInventors: Bernardette Kunert, Robert Langer, Yves Mols, Marina Baryshnikova
-
Patent number: 11646200Abstract: A method for forming a III-V construction over a group IV substrate comprises providing an assembly comprising the group IV substrate and a dielectric thereon. The dielectric layer comprises a trench exposing the group IV substrate. The method further comprises initiating growth of a first III-V structure in the trench, continuing growth out of the trench on top of the bottom part, growing epitaxially a sacrificial second III-V structure on the top part of the first III-V structure, and growing epitaxially a third III-V structure on the sacrificial second III-V structure. The third III-V structure comprises a top III-V layer. The method further comprises physically disconnecting a first part of the top layer from a second part thereof, and contacting the sacrificial second III-V structure with the liquid etching medium.Type: GrantFiled: May 18, 2021Date of Patent: May 9, 2023Assignee: IMEC VZWInventors: Liesbeth Witters, Niamh Waldron, Amey Mahadev Walke, Bernardette Kunert, Yves Mols
-
Patent number: 11556043Abstract: A monolithic integrated electro-optical phase modulator, a Mach-Zehnder modulator including one or more of the phase modulators, and method for fabricating the phase modulator by III-V-on-silicon semiconductor processing are provided. The phase modulator includes a silicon-based n-type substrate base layer, and a III-V n-type ridge waveguide for propagating light, wherein the ridge waveguide protrudes from and extends along the n-type substrate base layer. Further, the phase modulator includes one or more insulating layers provided on the ridge waveguide, wherein the one or more insulating layers have together a thickness of 1-100 nm, and a silicon-based p-type top cover layer provided on the one or more insulating layers at least above the ridge waveguide.Type: GrantFiled: June 15, 2021Date of Patent: January 17, 2023Assignee: IMEC VZWInventors: Younghyun Kim, Didit Yudistira, Bernardette Kunert, Joris Van Campenhout, Maria Ioanna Pantouvaki
-
Patent number: 11282702Abstract: The present invent provides a method comprising forming a first wafer comprising a first substrate of a group IV semiconductor, and a group III-V semiconductor device structure formed by selective area epitaxial growth on a surface portion of a front side of the first substrate. The method further comprises forming a second wafer comprising a second substrate of a group IV semiconductor, and a group IV semiconductor device structure formed on a front side of the second substrate, and bonding the first wafer to the second wafer with the front side of the first substrate facing the front side of the second wafer.Type: GrantFiled: October 12, 2020Date of Patent: March 22, 2022Assignee: IMEC VZWInventors: Philippe Soussan, Vasyl Motsnyi, Luc Haspeslagh, Stefano Guerrieri, Olga Syshchyk, Bernardette Kunert, Robert Langer
-
Publication number: 20220011641Abstract: A monolithic integrated electro-optical phase modulator, a Mach-Zehnder modulator including one or more of the phase modulators, and method for fabricating the phase modulator by III-V-on-silicon semiconductor processing are provided. The phase modulator includes a silicon-based n-type substrate base layer, and a III-V n-type ridge waveguide for propagating light, wherein the ridge waveguide protrudes from and extends along the n-type substrate base layer. Further, the phase modulator includes one or more insulating layers provided on the ridge waveguide, wherein the one or more insulating layers have together a thickness of 1-100 nm, and a silicon-based p-type top cover layer provided on the one or more insulating layers at least above the ridge waveguide.Type: ApplicationFiled: June 15, 2021Publication date: January 13, 2022Inventors: Younghyun Kim, Didit Yudistira, Bernardette Kunert, Joris Van Campenhout, Maria Ioanna Pantouvaki
-
Patent number: 11195767Abstract: A method for forming a semiconductor structure comprising: providing a silicon substrate having a first and a second flat top surface belonging to a first and a second substrate region respectively, the first top surface being lower than the second top surface, thereby forming a step delimiting the first and the second substrate region. The method further comprises forming, at least partially, one or more silicon semiconductor devices in the second substrate region, and forming, at least partially, one or more III-V semiconductor devices in the first substrate region.Type: GrantFiled: August 23, 2019Date of Patent: December 7, 2021Assignee: IMEC VZWInventors: Amey Mahadev Walke, Liesbeth Witters, Niamh Waldron, Robert Langer, Bernardette Kunert
-
Publication number: 20210358748Abstract: A method for forming a III-V construction over a group IV substrate comprises providing an assembly comprising the group IV substrate and a dielectric thereon. The dielectric layer comprises a trench exposing the group IV substrate. The method further comprises initiating growth of a first III-V structure in the trench, continuing growth out of the trench on top of the bottom part, growing epitaxially a sacrificial second III-V structure on the top part of the first III-V structure, and growing epitaxially a third III-V structure on the sacrificial second III-V structure. The third III-V structure comprises a top III-V layer. The method further comprises physically disconnecting a first part of the top layer from a second part thereof, and contacting the sacrificial second III-V structure with the liquid etching medium.Type: ApplicationFiled: May 18, 2021Publication date: November 18, 2021Inventors: Liesbeth Witters, Niamh Waldron, Amey Mahadev Walke, Bernardette Kunert, Yves Mols
-
Patent number: 11004962Abstract: The disclosed technology generally relates to integrated circuit devices having at least one transistor, and methods of fabricating the same. In one aspect, an integrated circuit device can be produced from a silicon substrate and can include at least one nano-ridge transistor formed from III-V semiconducting crystal portions. The III-V portions can be grown epitaxially from the silicon substrate using an intermediate portion which can be adapted to produce aspect ratio trapping. The nano-ridge transistor can have a reduced footprint on the silicon substrate, may be adapted for power RF applications, and can be combined with MOS or CMOS transistors within one and a same integrated circuit.Type: GrantFiled: August 27, 2019Date of Patent: May 11, 2021Assignee: IMEC vzwInventors: Robert Langer, Niamh Waldron, Bernardette Kunert
-
Publication number: 20210111021Abstract: The present invent provides a method comprising forming a first wafer comprising a first substrate of a group IV semiconductor, and a group III-V semiconductor device structure formed by selective area epitaxial growth on a surface portion of a front side of the first substrate. The method further comprises forming a second wafer comprising a second substrate of a group IV semiconductor, and a group IV semiconductor device structure formed on a front side of the second substrate, and bonding the first wafer to the second wafer with the front side of the first substrate facing the front side of the second wafer.Type: ApplicationFiled: October 12, 2020Publication date: April 15, 2021Inventors: Philippe SOUSSAN, Vasyl MOTSNYI, Luc HASPESLAGH, Stefano GUERRIERI, Olga SYSHCHYK, Bernardette KUNERT, Robert LANGER
-
Publication number: 20210062360Abstract: A method for growing at least one III/V nano-ridge on a silicon substrate in an epitaxial growth chamber. The method comprises: patterning an area on a silicon substrate thereby forming a trench on the silicon substrate; growing the III/V nano-ridge by initiating growth of the III/V nano-ridge in the trench, thereby forming and filling layer of the nano-ridge inside the trench, and by continuing growth out of the trench on top of the filling layer, thereby forming a top part of the nano-ridge, wherein at least one surfactant is added in the chamber when the nano-ridge is growing out of the trench.Type: ApplicationFiled: August 18, 2020Publication date: March 4, 2021Inventors: Bernardette Kunert, Robert Langer, Yves Mols, Marina Baryshnikova
-
Publication number: 20200203930Abstract: The disclosed technology relates to the development of a monolithic active electro-optical device. In some embodiments, the electro-optical device may be fabricated using the so-called nanoridge aspect ratio trapping (ART) approach. In one aspect, the electro-optical device is a monolithic integrated electro-optical device comprising a first-conductivity-type Si-based support region and a III-V-semiconductor-material ridge structure extending from the Si-based support region, wherein the ridge structure contains a recombination region. Furthermore, the device comprises a III-V-semiconductor capping layer having a higher band-gap than that of the III-V semiconductor material of the ridge structure and being formed on an outer surface of the ridge structure.Type: ApplicationFiled: December 18, 2019Publication date: June 25, 2020Inventors: Yannick De Koninck, Bernardette Kunert, Joris Van Campenhout, Maria Ioanna Pantouvaki, Nadezda Kuznetsova
-
Patent number: 10690852Abstract: A III-V semiconductor waveguide nanoridge structure having a narrow supporting base with a freestanding wider body portion on top, is disclosed. In one aspect, the III-V waveguide includes a PIN diode. The waveguide comprises a III-V semiconductor waveguide core formed in the freestanding wider body portion; at least one heterojunction incorporated in the III-V semiconductor waveguide core; a bottom doped region of a first polarity positioned at a bottom of the narrow supporting base, forming a lower contact; and an upper doped region of a second polarity, forming an upper contact. The upper contact is positioned in at least one side wall of the freestanding wider body portion.Type: GrantFiled: December 20, 2018Date of Patent: June 23, 2020Assignees: IMEC vzw, Universiteit GentInventors: Joris Van Campenhout, Ashwyn Srinivasan, Bernardette Kunert, Maria Ioanna Pantouvaki
-
Patent number: 10678007Abstract: Example embodiments relate to active-passive waveguide photonic systems. An example embodiment includes a monolithic integrated active/passive waveguide photonic system. The system includes a substrate having positioned thereon at least one active waveguide and at least one passive waveguide. The at least one active waveguide and the at least one passive waveguide are monolithically integrated and are arranged for evanescent wave coupling between the waveguides. The at least one active waveguide and the at least one passive waveguide are positioned so that at least a portion of each waveguide does not overlap the other waveguide, both in a height direction and in a lateral direction with respect to the substrate.Type: GrantFiled: October 3, 2018Date of Patent: June 9, 2020Assignees: IMEC VZW, Universiteit GentInventors: Joris Van Campenhout, Bernardette Kunert, Maria Ioanna Pantouvaki, Dries Van Thourhout, Yuting Shi
-
Publication number: 20200091003Abstract: A method for forming a semiconductor structure comprising: providing a silicon substrate having a first and a second flat top surface belonging to a first and a second substrate region respectively, the first top surface being lower than the second top surface, thereby forming a step delimiting the first and the second substrate region. The method further comprises forming, at least partially, one or more silicon semiconductor devices in the second substrate region, and forming, at least partially, one or more III-V semiconductor devices in the first substrate region.Type: ApplicationFiled: August 23, 2019Publication date: March 19, 2020Inventors: Amey Mahadev Walke, Liesbeth Witters, Niamh Waldron, Robert Langer, Bernardette Kunert
-
Publication number: 20200075750Abstract: The disclosed technology generally relates to integrated circuit devices having at least one transistor, and methods of fabricating the same. In one aspect, an integrated circuit device can be produced from a silicon substrate and can include at least one nano-ridge transistor formed from III-V semiconducting crystal portions. The III-V portions can be grown epitaxially from the silicon substrate using an intermediate portion which can be adapted to produce aspect ratio trapping. The nano-ridge transistor can have a reduced footprint on the silicon substrate, may be adapted for power RF applications, and can be combined with MOS or CMOS transistors within one and a same integrated circuit.Type: ApplicationFiled: August 27, 2019Publication date: March 5, 2020Inventors: Robert Langer, Niamh Waldron, Bernardette Kunert
-
Patent number: 10566250Abstract: The disclosed technology generally relates to semiconductor devices, and more specifically to a semiconductor device having a high aspect ratio channel layer. In one aspect, semiconductor device includes a semiconductor substrate having formed thereon a dielectric isolation layer having an opening formed therethrough. The semiconductor device additionally includes a filling isolation structure having a portion formed in the opening and a portion protruding above the dielectric isolation layer, wherein the filling isolation structure comprises a dielectric filling layer. The semiconductor device additionally includes a dielectric layer formed on the dielectric isolation layer, wherein the dielectric layer and the dielectric filling layer have top surfaces that are substantially co-planar to form a common top surface.Type: GrantFiled: February 8, 2019Date of Patent: February 18, 2020Assignee: IMEC vzwInventors: Bernardette Kunert, Niamh Waldron, Weiming Guo
-
Publication number: 20190244862Abstract: The disclosed technology generally relates to semiconductor devices, and more specifically to a semiconductor device having a high aspect ratio channel layer. In one aspect, semiconductor device includes a semiconductor substrate having formed thereon a dielectric isolation layer having an opening formed therethrough. The semiconductor device additionally includes a filling isolation structure having a portion formed in the opening and a portion protruding above the dielectric isolation layer, wherein the filling isolation structure comprises a dielectric filling layer. The semiconductor device additionally includes a dielectric layer formed on the dielectric isolation layer, wherein the dielectric layer and the dielectric filling layer have top surfaces that are substantially co-planar to form a common top surface.Type: ApplicationFiled: February 8, 2019Publication date: August 8, 2019Inventors: Bernardette Kunert, Niamh Waldron, Weiming Guo
-
Publication number: 20190219846Abstract: A III-V semiconductor waveguide nanoridge structure having a narrow supporting base with a freestanding wider body portion on top, is disclosed. In one aspect, the III-V waveguide includes a PIN diode. The waveguide comprises a III-V semiconductor waveguide core formed in the freestanding wider body portion; at least one heterojunction incorporated in the III-V semiconductor waveguide core; a bottom doped region of a first polarity positioned at a bottom of the narrow supporting base, forming a lower contact; and an upper doped region of a second polarity, forming an upper contact. The upper contact is positioned in at least one side wall of the freestanding wider body portion.Type: ApplicationFiled: December 20, 2018Publication date: July 18, 2019Inventors: Joris Van Campenhout, Ashwyn Srinivasan, Bernardette Kunert, Maria loanna Pantouvaki
-
Patent number: 10340188Abstract: The disclosed technology generally relates to manufacturing of semiconductor devices, and more particularly to manufacturing of a semiconductor device by transferring an active layer from a donor substrate. One aspect is a method of manufacturing a semiconductor device includes providing a donor wafer for transferring an active layer, comprising a group IV, a group III-IV or a group II-VI semiconductor material, to a handling wafer. The method includes forming the active layer on a sacrificial layer of the donor wafer, bonding the donor wafer to the handling wafer, and selectively etching the sacrificial layer to remove the donor wafer from the handling wafer, thereby leaving the active layer on the handling wafer.Type: GrantFiled: August 25, 2017Date of Patent: July 2, 2019Assignee: IMEC vzwInventors: Yves Mols, Niamh Waldron, Bernardette Kunert