Abstract: An optoelectronic device, such as a laser of the ridge waveguide type, can be provided with the necessary mesa (14) by means of wet or dry etching with a mask (20). The etching process is stopped when an etching stopper layer (5) is reached. A laser obtained by wet etching is indeed least expensive, but it is found to have a kink in its power-current characteristic at an undesirably low power value.According to the invention, such a laser must be manufactured in that the mask (20) used is given a width which is (much) greater than the width desired for the mesa (14), and in that, after a (preferably wet) etching process down to or down to close to the etching stopper layer (5), etching is continued with a wet isotropic etchant which is selective relative to the etching stopper layer (5) until the mesa (14) formed has the desired width.A very narrow and steep mesa (14) can thus be realized in an inexpensive manner.

Abstract: A device for propagating magnetic domains includes a monocrystalline nonmagnetic substrate of a rare earth gallium garnet bearing a layer of an iron garnet capable of supporting local enclosed magnetic domains. The iron garnet layer is grown in compression on a (100) face of the nonmagnetic substrate. The iron garnet comprises manganese in part of the iron sites of its crystal lattice, and comprises yttrium and at least one representative selected from the group comprising bismuth and the rare earth metals in the dodecahedral lattice sites. Such a magnetic garnet has a very high uniaxial anisotropy and a high domain mobility. These properties make the device extremely suitable for propagating submicron magnetic domains having diameters as small as 0.4 .mu.m.