Abstract: A semiconductor package for double sided cooling includes a first and a second carrier facing each other, at least one power semiconductor chip arranged between the first and second carriers, external contacts arranged at least partially between the first and second carriers, and spring elements arranged between the first and second carriers and configured to keep the first and second carriers at a predefined distance from each other.

Abstract: A semiconductor package for double sided cooling includes a first and a second carrier facing each other, at least one power semiconductor chip arranged between the first and second carriers, external contacts arranged at least partially between the first and second carriers, and spring elements arranged between the first and second carriers and configured to keep the first and second carriers at a predefined distance from each other.

Abstract: A semiconductor having a leadframe is disclosed. In one embodiment, a leadframe is disclosed to be fitted with a semiconductor chip and is to be encapsulated with a plastic compound has a metallic single-piece base body, to which an interlayer is applied. The interlayer has a surface including a matrix of islands of remaining material of substantially uniform height, with voids extending between said islands.

Abstract: A semiconductor device includes semiconductor device components, an adhesion promoter structure and a plastic housing composition. The semiconductor device components are embedded in the plastic housing composition with the adhesion promoter structure being disposed between the device components and the housing composition. The adhesion promoter structure includes first and second adhesion promoter layers. The first layer includes metal oxides. The metal oxides being silicates of a reactive compound composed of oxygen and organometallic molecules. The second layer includes at least one polymer.

Abstract: A semiconductor component includes a semiconductor chip provided with a passivation layer that covers the topmost interconnect structure of the semiconductor chip whilst leaving contact areas free. The passivation layer is in direct adhesive contact with the plastic housing composition of the semiconductor component. The passivation layer includes a polymer with embedded mineral-ceramic nanoparticles.

Abstract: In a device (35) and a method a thin organic or inorganic layer is applied to individual component positions of band-like structures (1). The layer can effect improved or optimized adhesion between a coated surface and a plastic housing compound. Furthermore, the layer can be used as a corrosion prevention layer, an electrical insulating layer or as a dielectric for the coated surfaces. For the selective application of the layer, the device (35) has a jet printer (2) having a plurality of electronically controllable jet heads (4-7). The jet printer (2) coats the band-like structures (1) selectively on the upper side (17) in a first coating position (15) and coats the band-like structures (1) selectively on the underside (18) in a second coating position (16).

Abstract: An MID module with a plug-type connector for an optical fibre with an upper face, edge faces and a lower face, comprising an accommodating channel surrounded by walls for the accommodation of an optical fibre. Here the diameter of the accommodation channel essentially corresponds to that of the optical fibre. The MID module further comprises a semiconductor chip, which is arranged on a front face of the accommodating channel. The semiconductor chip comprises an optically active region, which is optically accessible from the accommodation channel. A slot is provided in the walls of the MID module for the accommodation of a locking element. A locking element, introducible into the slot, locks the fibre in the accommodating channel.

Abstract: A semiconductor having a leadframe is disclosed. In one embodiment, a leadframe is disclosed to be fitted with a semiconductor chip and is to be encapsulated with a plastic compound has a metallic single-piece base body, to which an interlayer is applied. The interlayer has a surface including a matrix of islands of remaining material of substantially uniform height, with voids extending between said islands.

Abstract: The invention relates to a radiofrequency power semiconductor module having a cavity housing constructed from three modules, a 1st module, which has an upwardly and downwardly open housing frame with horizontally arranged flat conductors, a 2nd module, which has the chip island as a heat sink with at least one radiofrequency semiconductor component, the 2nd module forming the bottom of the cavity housing, and a 3rd module, which has the housing cover.

Abstract: An MID module with a plug-type connector for an optical fibre with an upper face, edge faces and a lower face, comprising an accommodating channel surrounded by walls for the accommodation of an optical fibre. Here the diameter of the accommodation channel essentially corresponds to that of the optical fibre. The MID module further comprises a semiconductor chip, which is arranged on a front face of the accommodating channel. The semiconductor chip comprises an optically active region, which is optically accessible from the accommodation channel. A slot is provided in the walls of the MID module for the accommodation of a locking element. A locking element, introducible into the slot, locks the fibre in the accommodating channel.

Abstract: The invention relates to a semiconductor component (1) comprising a semiconductor chip (3) provided with a passivation layer (2), and to methods for producing the same. In this case, the passivation layer (2) covers the topmost interconnect structure (4) of the semiconductor chip (1) whilst leaving contact areas (5) free. The passivation layer (2) is in direct adhesive contact with the plastic housing composition (6) of the semiconductor component (1), wherein the passivation layer (2) comprises a polymer (7) with embedded mineral-ceramic nanoparticles (8).

Abstract: A semiconductor device includes semiconductor device components, an adhesion promoter structure and a plastic housing composition. The semiconductor device components are embedded in the plastic housing composition with the adhesion promoter structure being disposed between the device components and the housing composition. The adhesion promoter structure includes first and second adhesion promoter layers. The first layer includes metal oxides. The metal oxides being silicates of a reactive compound composed of oxygen and organometallic molecules. The second layer includes at least one polymer.

Abstract: In a device (35) and a method a thin organic or inorganic layer is applied to individual component positions of band-like structures (1). The layer can effect improved or optimized adhesion between a coated surface and a plastic housing compound. Furthermore, the layer can be used as a corrosion prevention layer, an electrical insulating layer or as a dielectric for the coated surfaces. For the selective application of the layer, the device (35) has a jet printer (2) having a plurality of electronically controllable jet heads (4-7). The jet printer (2) coats the band-like structures (1) selectively on the upper side (17) in a first coating position (15) and coats the band-like structures (1) selectively on the underside (18) in a second coating position (16).

Abstract: The invention relates to a radiofrequency power semiconductor module having a cavity housing constructed from three modules, a 1st module, which has an upwardly and downwardly open housing frame with horizontally arranged flat conductors, a 2nd module, which has the chip island as a heat sink with at least one radiofrequency semiconductor components, the 2nd module forming the bottom of the cavity housing, and a 3rd module, which has the housing cover.