Abstract: Disclosed in a power semiconductor module which includes a stack of carrier substrates, disposed one above the other in multiple layers and provided with at least one conductor track on at least one main surface, in which at least one electronic semiconductor component is disposed between two adjacent carrier substrates of the stack and is contacted electrically and heat-conductively to at least one conductor track of a carrier substrate disposed in the stack above the semiconductor component and to at least one further conductor track of a carrier substrate disposed in the stack below the semiconductor component. To both improve heat output and provide a compact design, the two outer carrier substrates of the stack are embodied as one upper and one lower housing wall of a closed housing part surrounding the at least one semiconductor component, and the interstices between the stacked carrier substrates are tightly closed by an encompassing wall secured to the carrier substrates.

Abstract: A high-voltage component and a method for its manufacture. The component functions to switch currents at high voltages. The component is composed of partial components that are connected in series and are laterally supported on a self-supporting semiconductor wafer. The partial components switch through, for example, at a given voltage applied between a first bridge cathode and an anodic metallization.

Abstract: An integrated circuit having a power transistor and a circuit arrangement functioning in a temperature dependant manner and thermally coupled to the power transitor. The integrated circuit is used to reliably disconnect the power transistor in the event of overheating., particularly in the case of inductive loads, and does not reactivate the power transistor until, for example, an edge change has occurred at the base terminal of the integrated circuit.

Abstract: Described is a control circuit for an output stage for suppressing electrical and electromagnetic interference having a signal input (I), a signal output (O), and a ground terminal, two switch stages (1; 2) which are connected to the signal input (I) and the ground and which have one control terminal and one output terminal each, each switch stage (1; 2) switching over from a first state in which the potential at the output terminal follows the potential at the signal input (I) to a second state in which the potential at the output terminal is drawn to ground when a first or second threshold value (Uin1, Uin2) is exceeded at its control terminal, the control terminal (4) of the first switch stage (1) being connected to an intermediary potential, which is between the potential at the signal input (I) and ground, the output terminal (5) of the first switch stage (1) forming the control terminal of the second switch stage (2), the output terminal of the second switch stage forming the signal output (O) of the co

Abstract: A high-voltage component and a method for its manufacture are proposed, that function to switch currents at high voltages. The component is composed of partial components (10) that are connected in series and are laterally supported on a self-supporting semiconductor wafer (14), the partial components switching through, for example, at a given voltage applied between a first bridge cathode (22) and an anodic metallization (7).

Abstract: The gating circuit has a power transistor (T1, T2, T3) and a current measuring resistor (R5) connected with the power transistor so that a voltage drop at the measuring resistor is a measure of a current flow in the power transistor. This voltage drop is used to trigger a current regulating transistor (T5) and a temperature measuring transistor (T9). Below a predetermined temperature, the current flow is limited solely by the current regulating transistor (T5). Above this predetermined temperature the collector current is further reduced via the temperature measuring transistor (T9) and a further transistor (T10) so as to protect the power transistor from thermal overload.

Abstract: A break-over photodiode, designed as a light-sensitive thyristor, can be stacked using a series connection with a plurality of break-over photodiodes, such stacking representing a high-voltage break-over diode. The break-over photodiode can be triggered by lateral illumination in an edge zone, and includes a gate-layer resistivity under the emitter which is greater in an edge zone of the break-over photodiode than in the central zone of the break-over photodiode. The light sensitivity of the laterally illuminatable break-over photodiode is increased by a greater gate-layer resistivity in the edge zone as compared to the central zone.

Abstract: The invention relates to a voltage limiter for a transistor circuit with semiconductors (T.sub.20 and T.sub.21) in the arrangement of a plurality of successive amplifier stages, with a reference element (Zener diode Z.sub.20) and with at least one voltage divider arrangement (voltage divider R.sub.21 /R.sub.22). In accordance with the invention, the reference element (Zener diode Z.sub.20) is disposed downstream of the triggering circuit of the first stage or even closer at the output of the voltage limiter circuit for reducing the oscillation tendency.