Abstract: In one illustrative embodiment, the present invention is directed to forming a masking layer (104) above a semiconducting substrate (102), forming an opening (105) in the masking layer (104), forming sidewall spacers (109) that define an exposed surface of said substrate lying between the sidewall spacers (109), and forming a layer of gate dielectric material (108) on the exposed surface of the substrate. The method further comprises forming a layer of polysilicon in the opening (105) and on the gate dielectric layer (108), removing portions of the polysilicon layer lying outside the opening (105) to define a gate electrode (111), forming a layer of refractory metal above the gate electrode (111), converting at least some of the refractory metal layer to a metal silicide region (112) above the gate electrode (111), and removing the masking layer (104).

Abstract: The invention relates to a method of applying a nailwrap to a human nail. The method includes depositing an effective amount of a polymerization catalyst on the nailwrap, placing the nailwrap on a portion of the nail, and depositing a first layer of a monomer over the nailwrap to simulate a human nail. By depositing the polymerization catalyst on the nailwrap, polymerization of the monomer occurs from the bulk, i.e., the surface of the human nail, and proceeds to the surface of the artificial nail structure. The invention also relates to a nailwrap for use on a human nail with a monomer to support an artificial nail structure. The nailwrap includes a woven fiber and an effective amount of a polymerization catalyst embedded in the fiber to substantially polymerize the monomer.