Patents by Inventor Bernd Gobel

Bernd Gobel has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20130244852
    Abstract: A method for a continuous production of filters, particularly coffee filters and the like, from a material web, including the steps of (a) cutting parallel in reference to the direction of transportation of the material web to separate at least two rows of filter contours extending parallel in reference to the direction of transportation of the material web into one partial material web each, and (b) separating the filters of the respective partial material webs. The cutting to separate at least two rows into one partial material web each occurs essentially based on a cut with a wave-like progression. At least two partial material webs are arranged over top of each other such that a separation of the filters of the respective partial material webs occurs by a joint cut. A device for a continuous production of filters is also provided.
    Type: Application
    Filed: March 15, 2012
    Publication date: September 19, 2013
    Applicant: BIKOMA GMBH SPEZIALMASCHINEN
    Inventors: Walter Hilger, Bernd Gobel, Hartmut Stoye
  • Patent number: 6579758
    Abstract: Buried straps are produced on one side in deep trench structures. A PVD process is used to deposit masking material in the recess inclined at an angle. As a result, a masking wedge is produced on the buried strap, on one side in the base region of the recess. The masking wedge serves as a mask during a subsequent anisotropic etching step, which is carried out selectively with respect to the masking wedge, for removing the buried strap on one side.
    Type: Grant
    Filed: July 1, 2002
    Date of Patent: June 17, 2003
    Assignee: Infineon Technologies AG
    Inventors: Bernd Göbel, Martin Gutsche, Alfred Kersch, Werner Steinhögl
  • Publication number: 20030003652
    Abstract: Buried straps are produced on one side in deep trench structures. A PVD process is used to deposit masking material in the recess inclined at an angle. As a result, a masking wedge is produced on the buried strap, on one side in the base region of the recess. The masking wedge serves as a mask during a subsequent anisotropic etching step, which is carried out selectively with respect to the masking wedge, for removing the buried strap on one side.
    Type: Application
    Filed: July 1, 2002
    Publication date: January 2, 2003
    Inventors: Bernd Gobel, Martin Gutsche, Alfred Kersch, Werner Steinhogl
  • Patent number: 6436836
    Abstract: A depression is produced in a substrate for a capacitor of a memory cell of the DRAM cell configuration. An insulation and a storage node of the capacitor are produced in the depression. A spacer made of silicon is produced above the storage node. A first part of the spacer is doped by inclined implantation. The spacer is patterned by utilizing the different doping of the first part of the spacer. With the aid of the patterned spacer as a mask, the storage node and the insulation are altered in such a way that the storage node directly adjoins the substrate only in a limited patch of a sidewall of the depression and is otherwise isolated from the substrate by the insulation.
    Type: Grant
    Filed: April 30, 2001
    Date of Patent: August 20, 2002
    Assignee: Infineon Technologies AG
    Inventor: Bernd Göbel
  • Publication number: 20010034133
    Abstract: A depression is produced in a substrate for a capacitor of a memory cell of the DRAM cell configuration. An insulation and a storage node of the capacitor are produced in the depression. A spacer made of silicon is produced above the storage node. A first part of the spacer is doped by inclined implantation. The spacer is patterned by utilizing the different doping of the first part of the spacer. With the aid of the patterned spacer as a mask, the storage node and the insulation are altered in such a way that the storage node directly adjoins the substrate only in a limited patch of a sidewall of the depression and is otherwise isolated from the substrate by the insulation.
    Type: Application
    Filed: April 30, 2001
    Publication date: October 25, 2001
    Inventor: Bernd Gobel
  • Patent number: 6118159
    Abstract: The memory cell configuration comprises vertical transistors which are connected in a NOR architecture. The vertical transistors are disposed on flanks of trenches. Each vertical transistor includes an electrically insulated floating gate electrode, whose charge can be varied by Fowler-Nordheim tunneling due to a voltage drop between a control gate electrode and a source/drain region. The length of a coupling area in a direction parallel to a channel width, between the control gate electrode and the floating gate electrode is less than the channel width, in order to reduce the operating voltage. This is achieved by thermal oxidation of parts of the flanks of the trenches. Transistors which are adjacent in a direction transverse to the trenches share bit lines. Each bit line has a lightly doped first part and a highly doped second part. The coupling area can be enlarged even further by using a strip-shaped mask, which is extended by spacers.
    Type: Grant
    Filed: February 26, 1999
    Date of Patent: September 12, 2000
    Assignee: Siemens Aktiengesellschaft
    Inventors: Josef Willer, Franz Hofmann, Hans Reisinger, Emmerich Bertagnolli, Bernd Gobel, Barbara Hasler, Karl-Heinz Tietgen
  • Patent number: 6087692
    Abstract: A DRAM cell, including memory cells each having a first transistor, a second transistor and a third transistor. The memory cells also have a writing bit line, a writing word line, a read-out word line and a read-out bit line. The first transistor has a gate electrode and a second source/drain region. The second transistor has a gate electrode, a first source/drain region, and a second source/drain region. The gate electrode of the first transistor is connected to the first source/drain region of the second transistor. The second source/drain region of the second transistor is connected to said writing bit line. The gate electrode of the second transistor is connected to the writing word line. The third transistor has a gate electrode, a first source/drain region, and a second source/drain region. The gate electrode of the third transistor is connected to the read-out word line. The second source/drain region of the first transistor is connected to the first source/drain region of the third transistor.
    Type: Grant
    Filed: June 8, 1998
    Date of Patent: July 11, 2000
    Assignee: Siemens Aktiengesellschaft
    Inventors: Bernd Gobel, Emmerich Bertagnolli
  • Patent number: 4984730
    Abstract: An automatic wire bonding apparatus, for wedge-bonding using aluminium wire, comprises a bonding head comprising a bonding tool mounted on an ultrasonic transducer, a bonding tip of the tool being arranged, in the operation of the machine, to press aluminium wire against the contact surface of an electronic or electrical component, the wire being drawn from a suitable wire supply, and a wire clamp by which the wire drawn from the wire supply may be clamped, the wire clamp being movable backward and forward generally in the direction in which the wire is fed appropriately to position the free end of wire drawn from the spool after completion of a bonding operation. The automatic wire-bonding apparatus further comprises means for monitoring, during bonding, the quality of the bond formed between the wire and the surface to which it is to be bonded, by identifying those bonds which do not fall within predetermined maximum and minimum values for deformation of the wire due to ultrasonic excitation.
    Type: Grant
    Filed: November 3, 1989
    Date of Patent: January 15, 1991
    Assignee: Emhart Inc.
    Inventors: Bernd Gobel, Andreas Ziemann