Abstract: An active retina implant has a multiplicity of pixel elements that convert incident light into electric stimulation signals for cells of the retina with which stimulation electrodes are to make contact. Each pixel element is provided with at least one image cell that converts incident light into electric signals, there being provided at least one amplifier whose input is connected to the image cell and whose output is connected to at least one stimulation electrode to which it supplies a stimulation signal. Also provided is an energy supply which provides externally coupled external energy as supply voltage for the image cells and the amplifiers. The image cell has a logarithmic characteristic according to which incident light of specific intensity is converted into electric signals of specific amplitude. The stimulation signal is supplied in the form of analog voltage pulses of specific pulse length and pulse spacings, the pulse amplitude being a function of the intensity of the incident light.

Abstract: A camera module for electronically recording images has an image sensor with a plurality of image cells. Each image cell provides an electric image signal as a function of the intensity of incident light. Each image cell has a light-sensitive element for generating a light-dependent current, as well as at least one MOS transistor which is arranged in series therewith. The gate of the MOS transistor is at a fixed potential, and the source-drain path is flowed through by the light-dependent current. In accordance with one aspect of the invention, there is arranged at least one light source in the region of the image sensor by means of which the image cells can be illuminated.

Abstract: A device for the FPN correction of image signals which are generated by image cells of an image sensor comprises a discriminator for determining in which value range out of at least two value ranges a value of an image signal of an image cell is located at a predetermined instant of time. The result determined by the discriminator is feed to a correction device. The correction device selects correction coefficients from a plurality of sets of correction coefficients as a function of the result determined by the discriminator, and a transformation unit calculates the corrected value for the image signal by using the selected correction coefficients.

Abstract: In order to correct for fixed pattern noise in the signals of an image sensor, image signal values are read out from the pixels of the sensor. Individual correction values are added as analogue quantities to the image signal values via a signal path having a defined transfer function. Parameters which are characteristic of the defined transfer function are provided in a memory and the individual correction values are calculated in a correction value calculating unit using the parameters provided.

Abstract: An active retina implant has a multiplicity of pixel elements that convert incident light into electric stimulation signals for cells of the retina with which stimulation electrodes are to make contact. Each pixel element is provided with at least one image cell that converts incident light into electric signals, there being provided at least one amplifier whose input is connected to the image cell and whose output is connected to at least one stimulation electrode to which it supplies a stimulation signal. Also provided is an energy supply which provides externally coupled external energy as supply voltage for the image cells and the amplifiers. The image cell has a logarithmic characteristic according to which incident light of specific intensity is converted into electric signals of specific amplitude. The stimulation signal is supplied in the form of analog voltage pulses of specific pulse length and pulse spacings, the pulse amplitude being a function of the intensity of the incident light.

Abstract: What is described here is a method of analog signal processing of video signals from picture elements arranged in an array, which are adapted for discrete scanning in terms of time, using a resistive network, the so-called electronic retina, having a two-dimensional field structure including a number of lines m smaller than the number of lines p of the picture element array, wherein the video signals are transmitted from the picture elements in the electronic retina by lines in such a manner that, starting with the first line of picture elements, the video signals are transmitted into the first line of said electronic retina until after the transmission of the video signals from the m-th line of the picture element arrays into the m-th line of said electronic retina the picture elements of the m+1st line of the picture element array are transmitted into the electronic retina, starting again with the first line, until the p-th line of the picture element array is transmitted in a roll-over manner into the

Abstract: The invention relates to a MOS transistor for a photo cell, comprising a semiconductor substrate on which a gate electrode, a drain electrode and a photosensitive source region are configured. An oxide layer is arranged between the gate electrode and the substrate, and in the active region of the MOS transistor this oxide layer is formed as thin oxide film while it is configured as thick oxide film in a passive region. The inventive transistor is distinguished by the provisions that the gate electrode comprises a closed annular section in the active region of the MOS transistor, and that either the drain electrode or the photosensitive source region is arranged within the annular section of the gate electrode so that current will only flow in the active region.

Abstract: Inventive methods are provided for the production of large-area membrane masks, wherein an inexpedient mechanical excessive strain on the membrane or of the membrane layer/etching stop layer/supporting wafer system or the resulting breaking of the components is avoided, which excessive strain occurs particularly due to the employment of an etching cell or generally due to the thin semiconductor layers. The stripping of the semiconductor support layer is preferably performed in two partial steps that are carried out in a mechanically sealed etching cell or with a protective coating, or that one partial step is performed with an etching cell and one with a protective coating, or that the stripping of the semiconductor support layer is performed in a mechanically sealed etching cell initially with a supporting grid and that the supporting grid is removed only after withdrawal from the etching cell.

Abstract: A lithography exposure device allows more effective production of small structures within a short time by lithography. The device includes a retainer for a substrate, an exposure unit for producing a light spot on the light-sensitive layer of the substrate, a motion unit for producing apparent motion between the exposure unit and the retainer, and a control unit for controlling the intensity and position of the light spot on the light-sensitive layer. The exposure unit has several solid-state lasers, and a focusing unit that guides the laser beam of each solid-state laser to a light spot of a defined light spot pattern. The entire light spot pattern and the retainer are displaceable relative to each other in an exposure motional direction. Moreover, the light spots of the light spot pattern which correspond to the form of the partial areas to be exposed can be activated or deactivated.

Abstract: A three-dimensional CMOS integrated circuit structure in which two complementary field effect transistors are fabricated in vertical alignment with one another, and in which both transistors are single crystal and share a common crystal lattice structure and form a single unitary crystalline structure.