Patents by Inventor Bernd Hangleiter

Bernd Hangleiter has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8557390
    Abstract: The present invention relates to a glass product, comprising a glass substrate with a transparent and conductive indium tin oxide layer having a covering layer, which forms a redox barrier for the indium tin oxide layer, wherein the indium tin oxide layer is obtained by pulsed, highly ionizing high-power magnetron sputtering (HPPMS) in which—the pulses of the magnetron have a peak power density greater than 1.5 kW/cm2,—the pulses of the magnetron have a time duration that is ?200 ?s, and—the mean current flow density rise upon ignition of the plasma within a time interval that is ?0.025 ms is at least 106 ?(ms cm2), and the indium tin oxide layer has a crystalline structure, in such a way that the (222)-reflection of an X-ray diffraction spectrum after the production of the indium tin oxide layer is shifted relative to the powder spectrum of indium tin oxide by a maximum of 1 degree, preferably by 0.3 degrees to 0.
    Type: Grant
    Filed: June 9, 2009
    Date of Patent: October 15, 2013
    Assignee: Audi AG
    Inventors: Thomas Drescher, Bernd Hangleiter, Joachim Schuetz, Annegret Matthai, Heike Walter, Felix Horstmann, Bernd Szyszka, Volker Sittinger, Wolfgang Werner, Tjhay Weyna Boentoro
  • Publication number: 20110223415
    Abstract: The present invention relates to a glass product, comprising a glass substrate with a transparent and conductive indium tin oxide layer having a covering layer, which forms a redox barrier for the indium tin oxide layer, wherein the indium tin oxide layer is obtained by pulsed, highly ionizing high-power magnetron sputtering (HPPMS) in which—the pulses of the magnetron have a peak power density greater than 1.5 kW/cm2, —the pulses of the magnetron have a time duration that is ?200 ?s, and—the mean current flow density rise upon ignition of the plasma within a time interval that is ?0.025 ms is at least 106 ?(ms cm2), and the indium tin oxide layer has a crystalline structure, in such a way that the (222)-reflection of an X-ray diffraction spectrum after the production of the indium tin oxide layer is shifted relative to the powder spectrum of indium tin oxide by a maximum of 1 degree, preferably by 0.3 degrees to 0.
    Type: Application
    Filed: June 9, 2009
    Publication date: September 15, 2011
    Inventors: Thomas Drescher, Bernd Hangleiter, Joachim Schuetz, Annegret Matthai, Heike Walter, Felix Horstmann, Bernd Szyszka, Volker Sittinger, Wolfgang Werner, Tjhay Weyna Boentoro