Abstract: An active retina implant has a multiplicity of pixel elements that convert incident light into electric stimulation signals for cells of the retina with which stimulation electrodes are to make contact. Each pixel element is provided with at least one image cell that converts incident light into electric signals, there being provided at least one amplifier whose input is connected to the image cell and whose output is connected to at least one stimulation electrode to which it supplies a stimulation signal. Also provided is an energy supply which provides externally coupled external energy as supply voltage for the image cells and the amplifiers. The image cell has a logarithmic characteristic according to which incident light of specific intensity is converted into electric signals of specific amplitude. The stimulation signal is supplied in the form of analog voltage pulses of specific pulse length and pulse spacings, the pulse amplitude being a function of the intensity of the incident light.

Abstract: An active retina implant has a multiplicity of pixel elements that convert incident light into electric stimulation signals for cells of the retina with which stimulation electrodes are to make contact. Each pixel element is provided with at least one image cell that converts incident light into electric signals, there being provided at least one amplifier whose input is connected to the image cell and whose output is connected to at least one stimulation electrode to which it supplies a stimulation signal. Also provided is an energy supply which provides externally coupled external energy as supply voltage for the image cells and the amplifiers. The image cell has a logarithmic characteristic according to which incident light of specific intensity is converted into electric signals of specific amplitude. The stimulation signal is supplied in the form of analog voltage pulses of specific pulse length and pulse spacings, the pulse amplitude being a function of the intensity of the incident light.

Abstract: A lithography exposure device allows more effective production of small structures within a short time by lithography. The device includes a retainer for a substrate, an exposure unit for producing a light spot on the light-sensitive layer of the substrate, a motion unit for producing apparent motion between the exposure unit and the retainer, and a control unit for controlling the intensity and position of the light spot on the light-sensitive layer. The exposure unit has several solid-state lasers, and a focusing unit that guides the laser beam of each solid-state laser to a light spot of a defined light spot pattern. The entire light spot pattern and the retainer are displaceable relative to each other in an exposure motional direction. Moreover, the light spots of the light spot pattern which correspond to the form of the partial areas to be exposed can be activated or deactivated.

Abstract: A three-dimensional CMOS integrated circuit structure in which two complementary field effect transistors are fabricated in vertical alignment with one another, and in which both transistors are single crystal and share a common crystal lattice structure and form a single unitary crystalline structure.