Abstract: Embodiments relate to compensating for lens heating, lithographic projection system and photo mask. Accordingly, lens heating is compensated by providing a layout pattern including a regular pattern being arranged substantially symmetrical in a first region and a sub-resolution pattern including a plurality of sub-resolution structural elements, wherein the sub-resolution pattern in a second region, so as to minimize non-homogenous lens heating of a projection apparatus in case of a lithographic projection.

Abstract: Embodiments relate to compensating for lens heating, lithographic projection system and photo mask. Accordingly, lens heating is compensated by providing a layout pattern including a regular pattern being arranged substantially symmetrical in a first region and a sub-resolution pattern including a plurality of sub-resolution structural elements, wherein the sub-resolution pattern in a second region, so as to minimize non-homogenous lens heating of a projection apparatus in case of a lithographic projection.

Abstract: The invention relates to a method for optimizing a mask layout pattern comprising at least one structural feature. First a desired layout pattern is provided. Based on the desired layout pattern, an optimized reference diffraction coefficient is provided. After selecting an initial mask geometry having polygon-shaped structures, initial diffraction coefficients are calculated. A difference based on the reference diffraction coefficient and initial diffraction coefficients is used to optimize the initial geometry in order to provide a mask layout pattern.

Abstract: A method and device can be used for automatically generating at least one of a mask layout and an illumination pixel pattern of an imaging system in a process for the manufacturing of a semiconductor device. The mask layout is subdivided into a multitude of discrete tiles. A first dataset is generated and includes amplitude point spread function (APSF) values for a given imaging system for at least one defocus value z. A second dataset is generated and includes tile spread functions Vq(r), corresponding to mask tiles and illumination pixels. An intensity distribution I(r) is optimized in an image plane for the semiconductor device subject to a merit function by means of a stochastic variation by at least one of the group of the discrete mask tiles and the illumination pixels using the pre-calculated tile spread functions Vq(r) of the second dataset.

Abstract: Method and device for automatically generating at least one of a mask layout and an illumination pixel pattern, of an imaging system in a process for the manufacturing of a semiconductor device, wherein the mask layout is subdivided into a multitude of discrete tiles, comprising a) generating a first dataset comprising amplitude point spread function (APSF) values for a given imaging system for at least one defocus value z, b) after splitting the illumination pixel pattern into qk pixels, generating a second dataset comprising tile spread functions Vq(r), corresponding to mask tiles and illumination pixels, c) optimizing an intensity distribution I(r) in an image plane for the semiconductor device subject to a merit function, by means of a stochastic variation by at least one of the group of the discrete mask tiles and the illumination pixels using the pre-calculated tile spread functions Vq(r) of the second dataset.

Abstract: An arrangement for the transfer of structural elements of a photomask onto a substrate includes an illumination device, a photomask with a plurality of structural elements, wherein radiation from the illumination device transfers the structural elements of the photomask onto a photoresist placed on a substrate, and an optical element, wherein the optical element produces a local variation in the degree of transmission of the radiation.

Abstract: A method is provided for improving a photolithographic simulation model of the photolithographic simulation of a pattern formed on a photomask. Proceeding from a two-dimensional simulation model that takes account of the physical-chemical processes during lithography, a frequency-dependent intensity loss is calculated which is determined by multiplication of the simulated intensity distribution in the Fourier space by a filter function. An accurate calculation of the intensity distribution in the substrate plane is obtained. This method achieves the accuracy of three-dimensional models with a significantly shorter processing duration and is further suitable in particular for the calculation of OPC structures.

Abstract: The invention relates to a method for optimizing a mask layout pattern comprising at least one structural feature. First a desired layout pattern is provided. Based on the desired layout pattern, an optimized reference diffraction coefficient is provided. After selecting an initial mask geometry having polygon-shaped structures, initial diffraction coefficients are calculated. A difference based on the reference diffraction coefficient and initial diffraction coefficients is used to optimize the initial geometry in order to provide a mask layout pattern.