Abstract: Radio frequency shielding within a semiconductor package is described. In one example, a multiple chip package has a digital chip, a radio frequency chip, and an isolation layer between the digital chip and the radio frequency chip. A cover encloses the digital chip and the radio frequency chip.

Abstract: Radio frequency shielding within a semiconductor package is described. In one example, a multiple chip package has a digital chip, a radio frequency chip, and an isolation layer between the digital chip and the radio frequency chip. A cover encloses the digital chip and the radio frequency chip.

Abstract: Radio frequency shielding within a semiconductor package is described. In one example, a multiple chip package has a digital chip, a radio frequency chip, and an isolation layer between the digital chip and the radio frequency chip. A cover encloses the digital chip and the radio frequency chip.

Abstract: Embodiments of the present description include stacked microelectronic dice embedded in a microelectronic substrate and methods of fabricating the same. In one embodiment, at least one first microelectronic die is attached to a second microelectronic die, wherein an underfill material is provided between the second microelectronic die and the at least one first microelectronic die. The microelectronic substrate is then formed by laminating the first microelectronic die and the second microelectronic die in a substrate material.

Abstract: Radio frequency shielding within a semiconductor package is described. In one example, a multiple chip package has a digital chip, a radio frequency chip, and an isolation layer between the digital chip and the radio frequency chip. A cover encloses the digital chip and the radio frequency chip.

Abstract: Embodiments of the present description include stacked microelectronic dice embedded in a microelectronic substrate and methods of fabricating the same. In one embodiment, at least one first microelectronic die is attached to a second microelectronic die, wherein an underfill material is provided between the second microelectronic die and the at least one first microelectronic die. The microelectronic substrate is then formed by laminating the first microelectronic die and the second microelectronic die in a substrate material.

Abstract: Radio frequency shielding within a semiconductor package is described. In one example, a multiple chip package has a digital chip, a radio frequency chip, and an isolation layer between the digital chip and the radio frequency chip. A cover encloses the digital chip and the radio frequency chip.

Abstract: Embodiments of the present description include stacked microelectronic dice embedded in a microelectronic substrate and methods of fabricating the same. In one embodiment, at least one first microelectronic die is attached to a second microelectronic die, wherein an underfill material is provided between the second microelectronic die and the at least one first microelectronic die. The microelectronic substrate is then formed by laminating the first microelectronic die and the second microelectronic die in a substrate material.

Abstract: Via are described for radio frequency antenna connections related to a package. In one example, a package has a package substrate, a die attached to the package substrate, and a conductive via from the package substrate to an external surface of the package to make a radio frequency connection between the antenna and the package substrate.

Abstract: Embodiments of the present description include stacked microelectronic dice embedded in a microelectronic substrate and methods of fabricating the same. In one embodiment, at least one first microelectronic die is attached to a second microelectronic die, wherein an underfill material is provided between the second microelectronic die and the at least one first microelectronic die. The microelectronic substrate is then formed by laminating the first microelectronic die and the second microelectronic die in a substrate material.

Abstract: Via are described for radio frequency antenna connections related to a package. In one example, a package has a package substrate, a die attached to the package substrate, and a conductive via from the package substrate to an external surface of the package to make a radio frequency connection between the antenna and the package substrate.

Abstract: Radio frequency shielding within a semiconductor package is described. In one example, a multiple chip package has a digital chip, a radio frequency chip, and an isolation layer between the digital chip and the radio frequency chip. A cover encloses the digital chip and the radio frequency chip.

Abstract: A package with multiple chips and a shared redistribution layer is described. In one example, a first and a second die are formed where the first and the second die each have a different height. The dies are placed on a substrate. The first, the second, or both dies are ground so that the first and the second die are about the same height. Layers, such as redistribution layers are formed over both the first and the second die at the same time using a single process, and the first and the second die and the formed layers are packaged.

Abstract: A method for detecting the beginning of the dips of the amplitudes in the output signal of a time signal receiver identifying the beginning of a second in the time signal. The output signal of the receiver for the time signals is sampled N-times per second. The sampled values are stored to respective cells of a memory field with N cells. In the memory field a mean signal curve for the time interval of one second is generated over a period of several seconds. A minimum valve and hence the beginning of the seconds in the time signal is determined from the mean signal curve valves in the memory cells.

Abstract: An offset voltage at an output of a differential amplifier is compensated for by a control circuit having a digital setting device. The control circuit has a control device which is controlled by an offset voltage of the differential amplifier and which feeds an offset compensation signal into the differential amplifier. Compared with analog compensation with an external storage capacitor, temporal drift effects do not distort the offset compensation on the differential amplifier. The described principle can be applied, for example, in radio frequency receiver circuits.

Abstract: In order to shorten the transient recovery duration, the phase-locked loop has a voltage-controlled oscillator providing an oscillator signal to a first frequency divider. The first frequency divider divides the frequency of the oscillator signal, generates a first divider output signal therefrom, and passes it to a phase comparator during the transient recovery duration of the phase-locked loop. Furthermore, a unit is provided, which, after the transient recovery duration of the phase-looped loop, divides the frequency of the first divider output signal and passes it to the phase comparator. The phase comparator compares the first divider output signal with a first reference signal during the transient recovery duration. The phase comparator compares the divided divider output signal with a second reference signal after the transient recovery duration. The output of the phase comparator is connected to the voltage-controlled oscillator via a controllable charge pump.

Abstract: In order to shorten the transient recovery duration, the phase-locked loop has a voltage-controlled oscillator providing an oscillator signal to a first frequency divider. The first frequency divider divides the frequency of the oscillator signal, generates a first divider output signal therefrom, and passes it to a phase comparator during the transient recovery duration of the phase-locked loop. Furthermore, a unit is provided, which, after the transient recovery duration of the phase-looped loop, divides the frequency of the first divider output signal and passes it to the phase comparator. The phase comparator compares the first divider output signal with a first reference signal during the transient recovery duration. The phase comparator compares the divided divider output signal with a second reference signal after the transient recovery duration. The output of the phase comparator is connected to the voltage-controlled oscillator via a controllable charge pump.

Abstract: An offset voltage at an output of a differential amplifier is compensated for by a control circuit having a digital setting device. The control circuit has a control device which is controlled by an offset voltage of the differential amplifier and which feeds an offset compensation signal into the differential amplifier. Compared with analog compensation with an external storage capacitor, temporal drift effects do not distort the offset compensation on the differential 10 amplifier. The described principle can be applied, for example, in radio frequency receiver circuits.

Abstract: 1.

Abstract: In a method for calibrating or aligning a multistage selective amplifier including an oscillator circuit and at least one tuning circuit, the tuning voltages respectively necessary for aligning the respective tuning circuits to the required receiving frequency are calculated directly from a mathematical relationship between the respective tuning voltage and the oscillator voltage. In order to achieve this, a characteristic multiplicative coefficient and a characteristic additive factor for each tuning circuit are stored in a memory upon manufacturing or switching on the device. In order to select a desired receiving frequency, the respective stored values as well as an oscillator voltage are provided to an amplification circuit, which correspondingly amplifies the oscillator voltage by the multiplicative coefficient and the additive factor and then provides the resulting output value as a tuning voltage to the respective tuning circuit.