Abstract: A semiconductor flip-chip package includes a substrate having a first main face, a second main face opposite to the first main face, and one or more conductive structures disposed on the first main face, one or more pillars disposed on at least one of the conductive structures, a semiconductor die having one or more contact pads on a main face thereof, the semiconductor die being connected to the substrate so that at least one of the contact pads is connected with one of the pillars, and an encapsulant disposed on the substrate and the semiconductor die.

Abstract: A semiconductor flip-chip package includes a substrate having a first main face, a second main face opposite to the first main face, and one or more conductive structures disposed on the first main face, one or more pillars disposed on at least one of the conductive structures, a semiconductor die having one or more contact pads on a main face thereof, the semiconductor die being connected to the substrate so that at least one of the contact pads is connected with one of the pillars, and an encapsulant disposed on the substrate and the semiconductor die.

Abstract: A method includes providing a first and a second joining partner each having a first main surface, wherein at least a portion of the first main surfaces of the first and joining partners each comprise a metal layer. The method further includes applying a plurality of solder preforms to the metal layer of the first main surface of at least one of the first and second joining partners, positioning the first and second joining partners so that the solder preforms contact the metal layers of the first main surfaces of the first and second joining partners, and melting the plurality of solder preforms under pressure to form a single continuous thin layer area interconnect comprising a diffusion solder bond which bonds together the metal layers of the of the first main surfaces of the first and second joining partners.

Abstract: A method includes providing a first and a second joining partner each having a first main surface, wherein at least a portion of the first main surfaces of the first and joining partners each comprise a metal layer. The method further includes applying a plurality of solder preforms to the metal layer of the first main surface of at least one of the first and second joining partners, positioning the first and second joining partners so that the solder preforms contact the metal layers of the first main surfaces of the first and second joining partners, and melting the plurality of solder preforms under pressure to form a single continuous thin layer area interconnect comprising a diffusion solder bond which bonds together the metal layers of the of the first main surfaces of the first and second joining partners.

Abstract: A semiconductor device and method is disclosed. One embodiment provides a method comprising placing a first semiconductor chip on a carrier. After placing the first semiconductor chip on the carrier, an electrically insulating layer is deposited on the carrier. A second semiconductor chip is placed on the electrically insulating layer.

Abstract: One embodiment provides a semiconductor assembly including a printed circuit board and a semiconductor package. The semiconductor package includes a lead frame having a die pad and a plurality of leads spaced from the die pad, a chip attached to the die pad on a front face of the lead frame, at least one electrically conductive structure element mechanically coupled to but electrically isolated from the front face of the lead frame, at least one connector electrically connecting the chip to the structure element, at least one connector electrically connecting the structure element to at least one of the leads, and a mold material encasing the semiconductor package except for an end portion of the leads which are electrically connected to the printed circuit board.

Abstract: A semiconductor device and method is disclosed. One embodiment provides a method comprising placing a first semiconductor chip on a carrier. After placing the first semiconductor chip on the carrier, an electrically insulating layer is deposited on the carrier. A second semiconductor chip is placed on the electrically insulating layer.

Abstract: An external contact material for external contacts of a semiconductor device and a method for producing the same are described. The external contact material includes a lead-free solder material. Provided in the solder material is a filler which forms a plurality of gas pores and/or has plastic particles which are arranged in the volume of the solder material.

Abstract: A semiconductor device is disclosed. One embodiment provides a device including a carrier, an electrically insulating layer applied onto the carrier, an adhesive layer applied to the electrically insulating layer. A first semiconductor chip applied to the adhesive layer.

Abstract: One embodiment provides a semiconductor assembly including a printed circuit board and a semiconductor package. The semiconductor package includes a lead frame having a die pad and a plurality of leads spaced from the die pad, a chip attached to the die pad on a front face of the lead frame, at least one electrically conductive structure element mechanically coupled to but electrically isolated from the front face of the lead frame, at least one connector electrically connecting the chip to the structure element, at least one connector electrically connecting the structure element to at least one of the leads, and a mold material encasing the semiconductor package except for an end portion of the leads which are electrically connected to the printed circuit board.

Abstract: Embodiments provide an electronic device. The electronic device includes a leadframe having a first face that defines an island and multiple leads configured to communicate with a chip attached to the island, a first structure element separate from and coupled to a first face of the leadframe, at least one electrical connector coupled between the chip and the first structure element, and at least one electrical connector coupled between the first structure element and one of the multiple leads.

Abstract: Embodiments provide an electronic device. The electronic device includes a leadframe having a first face that defines an island and multiple leads configured to communicate with a chip attached to the island, a first structure element separate from and coupled to a first face of the leadframe, at least one electrical connector coupled between the chip and the first structure element, and at least one electrical connector coupled between the first structure element and one of the multiple leads.

Abstract: A semiconductor device is disclosed. One embodiment provides a device including a carrier, an electrically insulating layer applied onto the carrier, an adhesive layer applied to the electrically insulating layer. A first semiconductor chip applied to the adhesive layer.

Abstract: An external contact material for external contacts of a semiconductor device and a method for producing the same are described. The external contact material includes a lead-free solder material. Provided in the solder material is a filler which forms a plurality of gas pores and/or has plastic particles which are arranged in the volume of the solder material.

Abstract: An electronic component includes a substrate with outer contact areas including copper. Lead-free solder bumps are disposed on the outer contact areas of the electronic component. An electronic configuration includes an electronic component and a printed circuit board. The electronic component is mounted on the printed circuit board by lead-free solder electrical connections.