Abstract: A method and device for ion beam processing of surfaces of a substrate positions the substrate to face an ion beam, and a new technologically-defined pattern of properties is established. According to the method, the current geometrical effect pattern of the ion beam on the surface of the substrate is adjusted depending on the known pattern of properties and the new technologically-defined pattern of properties, and depending upon the progress of the processing, by modifying the beam characteristic and/or by pulsing the ion beam. A device for carrying out the method includes a substrate support for holding at least one substrate, which can be moved along an Y-axis and an X-axis, and an ion beam source for generating an ion beam, which is perpendicular to the surface to be processed of the substrate in the Z-axis or which may be arranged in an axis, inclined in relation to the Z-axis. The distance between the ion beam source and the surface to be processed of the substrate may be fixed or variable.

Abstract: The invention relates to an ECR plasma source comprising a coaxial microwave supply line with an internal conductor and an external conductor, wherein the internal conductor with one end as the antenna passes through a vacuum flange in insulated fashion, which vacuum flange closes off an opening in the wall to the plasma space. A multipole magnet arrangement is provided coaxially with respect to the microwave supply line and its magnetic fields pass through the vacuum flange and form an annular-gap magnetic field in the plasma space coaxially with respect to the antenna.

Abstract: A method and device for ion beam processing of surfaces of a substrate positions the substrate to face an ion beam, and a new technologically-defined pattern of properties is established. According to the method, the current geometrical effect pattern of the ion beam on the surface of the substrate is adjusted depending on the known pattern of properties and the new technologically-defined pattern of properties, and depending upon the progress of the processing, by modifying the beam characteristic and/or by pulsing the ion beam. A device for carrying out the method includes a substrate support for holding at least one substrate, which can be moved along an Y-axis and an X-axis, and an ion beam source for generating an ion beam, which is perpendicular to the surface to be processed of the substrate in the Z-axis or which may be arranged in an axis, inclined in relation to the Z-axis. The distance between the ion beam source and the surface to be processed of the substrate may be fixed or variable.

Abstract: In the process according to the invention molding compounds based on duroplastic bonding agents are produced thereby that the bonding agents are mixed as a melt with the filler and additive substances. Curing is achieved thereby that the temperature of the mixture during the mixing process increases above the onset temperature of the curing reaction and, after the desired degree of curing has been attained, is suddenly lowered.

Abstract: Hard coatings for mechanically and corrosively stressed elements are applicable to arbitrarily chosen substrate materials. The mentioned elements can be tools, cutting inserts or bearings. Further, applications are possible in electronics and optics and also for decorative purposes. Hard coatings on the basis of carbon and boron nitride, produced by known techniques, are obtained which can be used in a wide field of application, exhibiting, besides a high hardness, maximum adhesion and good protection against wear and corrosion at high temperatures. The C and B/N coatings consist of amorphous network structures with short range orders similar to that of the hexagonal crystalline phases of carbon and boron nitride, have hydrogen concentrations between 5 atom-% and 50 atom-% and additional components consisting of metals and/or boron and or silicon and/or noble gases in the concentration range between 1 atom-% and 85 atom-%.