Abstract: In a semiconductor element is shown having a silicon layer, a waveguide comprising silicon and a diode structure connected with external, conductive contacts. The diode structure is provided in such an arrangement to the waveguide that the diode structure can be influenced by electron hole pairs generated by photons in the waveguide. In order to create a semiconductor element with an optical waveguide and an integrated diode structure, in which high losses in the optical waveguide are avoided, the waveguide is weakly doped, and a germanium-rich layer is a component of the diode structure. The semiconductor element is well suited as a component in integrated optics for optical-electrical conversion.

Abstract: A process for the production of a low-loss optical waveguide in an epitaxial silicon film is employed to form a silicon structural element with integrated electronic components in a silicon substrate. Between the silicon substrate and the epitaxial silicon film is an insulating film. The epitaxial film consists of silicon-on-insulator (SOI) material, which is an uncommon material. In order to carry out this process relatively cheaply, a lightly doped epitaxial silicon film is applied to the silicon substrate. A substance germanium and having a refractive index with a real component higher than that of silicon is diffused into the epitaxial silicon film.