Abstract: Semiconductor layer structure and a method for producing a structure are provided, including a substrate made of semiconductor material, on which a layer made of a second semiconductor material is situated, furthermore a region (3) enriched with impurity atoms, which region is situated either in layer (2) or at a specific depth below the interface between layer (2) and substrate (1), additionally a layer (4) within the region (3) enriched with impurity atoms, which layer comprises cavities produced by ion implantation, furthermore at least one epitaxial layer (6) applied to layer (2) and also a defect region (5) comprising dislocations and stacking faults within the layer (4) comprising cavities, the at least one epitaxial layer (6) being largely crack-free, and a residual strain of the at least one epitaxial layer (6) being less than or equal to 1 GPa.

Abstract: Semiconductor layer structure and a method for producing a structure are provided, including a substrate made of semiconductor material, on which a layer made of a second semiconductor material is situated, furthermore a region (3) enriched with impurity atoms, which region is situated either in layer (2) or at a specific depth below the interface between layer (2) and substrate (1), additionally a layer (4) within the region (3) enriched with impurity atoms, which layer comprises cavities produced by ion implantation, furthermore at least one epitaxial layer (6) applied to layer (2) and also a defect region (5) comprising dislocations and stacking faults within the layer (4) comprising cavities, the at least one epitaxial layer (6) being largely crack-free, and a residual strain of the at least one epitaxial layer (6) being less than or equal to 1 GPa.

Abstract: Semiconductor layer structure and a method for producing a structure are provided, including a substrate made of semiconductor material, on which a layer made of a second semiconductor material is situated, furthermore a region (3) enriched with impurity atoms, which region is situated either in layer (2) or at a specific depth below the interface between layer (2) and substrate (1), additionally a layer (4) within the region (3) enriched with impurity atoms, which layer comprises cavities produced by ion implantation, furthermore at least one epitaxial layer (6) applied to layer (2) and also a defect region (5) comprising dislocations and stacking faults within the layer (4) comprising cavities, the at least one epitaxial layer (6) being largely crack-free, and a residual strain of the at least one epitaxial layer (6) being less than or equal to 1 GPa.

Abstract: This invention relates to a method for the production of diamond films with low misorientation through the deposition of diamond on a film system, whereby the film system exhibits a substrate film made of monocrystalline silicon or silicon carbide, at least one buffer film arranged on that, and at least one metal film made of a refractory metal arranged on that, whereby the diamond is deposited on the at least one metal film.

Abstract: The following invention provides a method for forming a layered semiconductor structure having a layer of a first semiconductor material on a substrate of at least one second semiconductor material, comprising the steps of: providing said substrate; burying said layer of said first semiconductor material in said substrate, said buried layer having an upper surface and a lower surface and dividing said substrate into an upper part and a lower part; creating a buried damage layer; which at least partly adjoins and/or partly includes said upper surface of said buried layer; and removing said upper part of said substrate and said buried damage layer for exposing said buried layer. The invention also provides a corresponding layered semiconductor structure.

Abstract: Semiconductor layer structure and a method for producing a structure are provided, including a substrate made of semiconductor material, on which a layer made of a second semiconductor material is situated, furthermore a region (3) enriched with impurity atoms, which region is situated either in layer (2) or at a specific depth below the interface between layer (2) and substrate (1), additionally a layer (4) within the region (3) enriched with impurity atoms, which layer comprises cavities produced by ion implantation, furthermore at least one epitaxial layer (6) applied to layer (2) and also a defect region (5) comprising dislocations and stacking faults within the layer (4) comprising cavities, the at least one epitaxial layer (6) being largely crack-free, and a residual strain of the at least one epitaxial layer (6) being less than or equal to 1 GPa.

Abstract: This invention relates to a method for the production of diamond films with low misorientation through the deposition of diamond on a film system, whereby the film system exhibits a substrate film made of monocrystalline silicon or silicon carbide, at least one buffer film arranged on that, and at least one metal film made of a refractory metal arranged on that, whereby the diamond is deposited on the at least one metal film.

Abstract: A rotating cylindrical target has material ablated therefrom by a laser beam trained to contact the surface along a line parallel to the rotation axis, thereby avoiding problems of crater formation which arise with disc-shaped targets.