Patents by Inventor Bernd Szyszka
Bernd Szyszka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9039872Abstract: A method for producing a transparent and conductive metal oxide layer on a substrate, includes atomizing at least one component of the metal oxide layer by highly ionized, high power pulsed magnetron sputtering to condense on the substrate. The pulses of the magnetron have a peak power density of more than 1.5 kW/cm2, the pulses of the magnetron have a duration of ?200 ?s, and the average increase in current density during ignition of the plasma within an interval, which is ?0.025 ms, is at least 106 A/(ms cm2).Type: GrantFiled: June 9, 2009Date of Patent: May 26, 2015Assignee: Fraunhofer-Gesellschaft zur Foerderung der Angewandten Forschung E.V.Inventors: Felix Horstmann, Volker Sittinger, Bernd Szyszka
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Patent number: 8557390Abstract: The present invention relates to a glass product, comprising a glass substrate with a transparent and conductive indium tin oxide layer having a covering layer, which forms a redox barrier for the indium tin oxide layer, wherein the indium tin oxide layer is obtained by pulsed, highly ionizing high-power magnetron sputtering (HPPMS) in which—the pulses of the magnetron have a peak power density greater than 1.5 kW/cm2,—the pulses of the magnetron have a time duration that is ?200 ?s, and—the mean current flow density rise upon ignition of the plasma within a time interval that is ?0.025 ms is at least 106 ?(ms cm2), and the indium tin oxide layer has a crystalline structure, in such a way that the (222)-reflection of an X-ray diffraction spectrum after the production of the indium tin oxide layer is shifted relative to the powder spectrum of indium tin oxide by a maximum of 1 degree, preferably by 0.3 degrees to 0.Type: GrantFiled: June 9, 2009Date of Patent: October 15, 2013Assignee: Audi AGInventors: Thomas Drescher, Bernd Hangleiter, Joachim Schuetz, Annegret Matthai, Heike Walter, Felix Horstmann, Bernd Szyszka, Volker Sittinger, Wolfgang Werner, Tjhay Weyna Boentoro
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Publication number: 20130203211Abstract: A method coats a substrate with an aluminum-doped zinc oxide. The method includes generating a nucleation coating between 5 nm and 400 nm thick and having zinc oxide or doped zinc oxide, in particular aluminum-doped zinc oxide, on a surface of a substrate by atomizing a solid target. A quasi-epitaxially propagating top coating is generated and contains an aluminum-doped zinc oxide on the nucleation coating and the top coating is wet chemically etched.Type: ApplicationFiled: December 23, 2010Publication date: August 8, 2013Inventors: Volker Sittinger, Bernd Szyszka, Wilma Dewald, Frank Säuberlich, Bernd Stannowski
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Publication number: 20120325295Abstract: An arrangement includes a transparent substrate, at least one transparent electrically conductive layer on the substrate. At least one photoelectric device for converting radiation energy into electrical energy can be arranged on the at least one transparent electrically conductive layer. The at least one transparent electrically conductive layer includes at least one first transparent electrically conductive layer and at least one second transparent electrically conductive layer.Type: ApplicationFiled: April 30, 2012Publication date: December 27, 2012Applicants: Fraunhofer-Gesellschaft zur Foerderung der Angewandten Forschung E. V., Schueco TF GmbH & Co. KGInventors: Frank Sauberlich, Bernd Stannowski, Tobias Wendelmuth, Volker Sittinger, Bernd Szyszka
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Publication number: 20120097529Abstract: The invention relates to a new basic technology for magnetron sputtering of ceramic layers, in particular for optical applications. The new concept enables the construction of magnetron sputtering sources which, in comparison with the known methods, such as reactive DC-, MF- or RF magnetron sputtering or the magnetron sputtering of ceramic targets, enables significantly improved precision in the deposition of ceramic layers at an exactly defined rate and homogeneity and also with very good reproducibility.Type: ApplicationFiled: March 25, 2010Publication date: April 26, 2012Applicant: Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V.Inventors: Andreas Pflug, Michael Siemers, Volker Sittinger, Bernd Szyszka, Stephan Ulrich
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Publication number: 20110223415Abstract: The present invention relates to a glass product, comprising a glass substrate with a transparent and conductive indium tin oxide layer having a covering layer, which forms a redox barrier for the indium tin oxide layer, wherein the indium tin oxide layer is obtained by pulsed, highly ionizing high-power magnetron sputtering (HPPMS) in which—the pulses of the magnetron have a peak power density greater than 1.5 kW/cm2, —the pulses of the magnetron have a time duration that is ?200 ?s, and—the mean current flow density rise upon ignition of the plasma within a time interval that is ?0.025 ms is at least 106 ?(ms cm2), and the indium tin oxide layer has a crystalline structure, in such a way that the (222)-reflection of an X-ray diffraction spectrum after the production of the indium tin oxide layer is shifted relative to the powder spectrum of indium tin oxide by a maximum of 1 degree, preferably by 0.3 degrees to 0.Type: ApplicationFiled: June 9, 2009Publication date: September 15, 2011Inventors: Thomas Drescher, Bernd Hangleiter, Joachim Schuetz, Annegret Matthai, Heike Walter, Felix Horstmann, Bernd Szyszka, Volker Sittinger, Wolfgang Werner, Tjhay Weyna Boentoro
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Publication number: 20100282598Abstract: The invention relates to the control of a reactive high-power pulsed sputter process. The invention particularly relates to a method for controlling a process of the aforementioned kind, wherein a controlled variable is measured and an adjustable variable is modified based on the measured controlled variable in order to adjust the controlled variable to a predetermined setting value. The method according to the invention is characterised by modifying the discharge capacity by varying the pulse frequency of the discharge.Type: ApplicationFiled: June 20, 2007Publication date: November 11, 2010Applicant: Fraunhofer-Gesellschaft Zur Foerderung Der Angewan dten Forschung E.V.Inventors: Florian Ruske, Volker Sittinger, Bernd Szyszka
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Patent number: 7763150Abstract: A method and device for magnetron sputtering are provided. A magnetron coating system includes a first coating source and an auxiliary substrate arranged between the first coating source and an area into which a substrate to be coated is to be received. The system also includes a magnetron having a cathode composed of the auxiliary substrate. Additionally, the system includes a device structured and arranged to determine an area density of the auxiliary substrate.Type: GrantFiled: November 29, 2004Date of Patent: July 27, 2010Assignee: Fraunhofer-Gesellschaft zur Foerderung der angewandten Forschung e.V.Inventors: Bernd Szyszka, Andreas Pflug
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Publication number: 20100006426Abstract: A method for depositing at least one stable, transparent and conductive layer system on chalcopyrite solar cell absorbers. The at least one stable, transparent and conductive layer system may be formed via ionizing PVD (physical vapor deposition) technology by using either high power pulsed magnetron sputtering (HPPMS) or high power impulse magnetron sputtering (HIPIMS).Type: ApplicationFiled: September 28, 2007Publication date: January 14, 2010Applicant: FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ANGEWANDInventors: Volker Sittinger, Florian Ruske, Bernd Szyszka
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Publication number: 20070158177Abstract: The invention relates to a magnetron coating system, comprising a first coating source, an auxiliary substrate, a magnetron and means for determining the area density of the auxiliary substrate. The auxiliary substrate is thereby arranged between the first coating source and the area that is provided to receive the substrate to be coated, and forms a cathode for the magnetron. The invention further relates to a method for depositing thin layers, in which a layer is deposited on an auxiliary substrate by means of a first coating source and this auxiliary substrate is used as a cathode for coating a substrate by means of a magnetron and the area density of the auxiliary substrate is determined.Type: ApplicationFiled: November 29, 2004Publication date: July 12, 2007Inventors: Bernd Szyszka, Andreas Pflug
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Publication number: 20050236276Abstract: A method for coating substrates in inline installations, in which a substrate is moved through at least one coating chamber and during this movement is coated. In this method, first, a model of the coating chamber is formed which takes into consideration the changes of the chamber parameters caused by the movement of the substrate through the coating chamber. Subsequently, the particular position of the substrate within the coating chamber is acquired. The chamber parameters are subsequently set based on the position of the substrate according to the model of the coating chambers.Type: ApplicationFiled: November 24, 2004Publication date: October 27, 2005Inventors: Albert Kastner, Michael Geisler, Thomas Leipnitz, Jurgen Bruch, Andreas Pflug, Bernd Szyszka
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Publication number: 20050145487Abstract: The invention relates to a coating installation comprising a recipient (1) which is divided into a cathode side (3) and a substrate side (4) by means of a screen (2). The cathode side (3) and the substrate side (4) respectively have a direct extraction outlet (10, 16) and a gas admission (8, 14). The gas admission (8) on the cathode side (3) is connected to a process gas source (9) and the gas admission (14) for the substrate side (4) is connected to a reactive gas source (15).Type: ApplicationFiled: April 11, 2003Publication date: July 7, 2005Inventors: Michael Geisler, Albert Kastner, Bernd Szyszka, Andreas Pflug, Niels Malkomes
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Patent number: 6797128Abstract: The invention relates to a method for regulating MF or HF sputtering processes, a harmonic analysis of the electrical discharge parameters being implemented and the MF or HF output and/or the reactive gas flow being regulated on the basis of the analysis results.Type: GrantFiled: July 29, 2002Date of Patent: September 28, 2004Assignee: Fraunhofer-Gesellschaft zur Forderung der Angewandten Forschung e.V.Inventors: Bernd Szyszka, Niels Malkomes