Patents by Inventor Bernd-Ulrich H. Klepser

Bernd-Ulrich H. Klepser has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Si/SiGe optoelectronic integrated circuits
    Patent number: 7083998
    Abstract: An integrated optoelectronic circuit and process for making is described incorporating a photodetector and a MODFET on a chip. The chip contains a single-crystal semiconductor substrate, a buffer layer of SiGe graded in composition, a relaxed SiGe layer, a quantum well layer, an undoped SiGe spacer layer and a doped SiGe supply layer. The photodetector may be a metal-semiconductor-metal (MSM) or a p-i-n device. The detector may be integrated with an n- or p-type MODFET, or both in a CMOS configuration, and the MODFET can incorporate a Schottky or insulating gate. The invention overcomes the problem of producing Si-manufacturing-compatible monolithic high-speed optoelectronic circuits for 850 nm operation by using epixially-grown Si/SiGe heterostructure layers.
    Type: Grant
    Filed: July 1, 2004
    Date of Patent: August 1, 2006
    Assignee: International Business Machines Corporation
    Inventors: Jack Oon Chu, Khalid EzzEldin Ismail, Steven John Koester, Bernd-Ulrich H. Klepser
  • Si/SiGe optoelectronic integrated circuits
    Patent number: 6784466
    Abstract: An integrated optoelectronic circuit and process for making is described incorporating a photodetector and a MODFET on a chip. The chip contains a single-crystal semiconductor substrate, a buffer layer of SiGe graded in composition, a relaxed SiGe layer, a quantum well layer, an undoped SiGe spacer layer and a doped SiGe supply layer. The photodetector may be a metal-semiconductor-metal (MSM) or a p-i-n device. The detector may be integrated with an n- or p-type MODFET, or both in a CMOS configuration, and the MODFET can incorporate a Schottky or insulating gate. The invention overcomes the problem of producing Si-manufacturing-compatible monolithic high-speed optoelectronic circuits for 850 nm operation by using epixially-grown Si/SiGe heterostructure layers.
    Type: Grant
    Filed: April 11, 2002
    Date of Patent: August 31, 2004
    Assignee: International Business Machines Corporation
    Inventors: Jack Oon Chu, Khalid EzzEldin Ismail, Steven John Koester, Bernd-Ulrich H. Klepser
  • Si/SiGe optoelectronic integrated circuits
    Publication number: 20020171077
    Abstract: An integrated optoelectronic circuit and process for making is described incorporating a photodetector and a MODFET on a chip. The chip contains a single-crystal semiconductor substrate, a buffer layer of SiGe graded in composition, a relaxed SiGe layer, a quantum well layer, an undoped SiGe spacer layer and a doped SiGe supply layer. The photodetector may be a metal-semiconductor-metal (MSM) or a p-i-n device. The detector may be integrated with an nor p-type MODFET, or both in a CMOS configuration, and the MODFET can incorporate a Schottky or insulating gate. The invention overcomes the problem of producing Si-manufacturing-compatible monolithic high-speed optoelectronic circuits for 850 nm operation by using epixially-grown Si/SiGe heterostructure layers.
    Type: Application
    Filed: April 11, 2002
    Publication date: November 21, 2002
    Inventors: Jack Oon Chu, Khalid EzzEldin Ismail, Steven John Koester, Bernd-Ulrich H. Klepser