Patents by Inventor Bernd WILDPANNER

Bernd WILDPANNER has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor component and method for producing a metal-semiconductor contact
    Patent number: 8610289
    Abstract: A semiconductor component including a first layer (10) of a semiconductor material as a substrate, a second layer (12) running on said first layer (10), and at least two intermediate layers (14, 16) made of the materials of the first and second layers running between the first and second layer, where the first intermediate layer (16) facing the second layer (12) may contain a eutectic mixture (18) made of the materials of the first and second layers. The invention is also directed to an electroconductive contact (15, 15a, 15b) forming an electroconductive connection to the first layer and originating at or running through the second layer, as well as to a method for producing the metal-semiconductor contact.
    Type: Grant
    Filed: June 12, 2008
    Date of Patent: December 17, 2013
    Assignee: Schott Solar AG
    Inventors: Bernd Wildpanner, Hilmar Von Campe, Werner Buss
  • SEMICONDUCTOR COMPONENT AND METHOD FOR PRODUCING A METAL-SEMICONDUCTOR CONTACT
    Publication number: 20080308892
    Abstract: A semiconductor component including a first layer (10) of a semiconductor material as a substrate, a second layer (12) running on said first layer (10), and at least two intermediate layers (14, 16) made of the materials of the first and second layers running between the first and second layer, where the first intermediate layer (16) facing the second layer (12) may contain a eutectic mixture (18) made of the materials of the first and second layers. The invention is also directed to an electroconductive contact (15, 15a, 15b) forming an electroconductive connection to the first layer and originating at or running through the second layer, as well as to a method for producing the metal-semiconductor contact.
    Type: Application
    Filed: June 12, 2008
    Publication date: December 18, 2008
    Applicant: SCHOTT SOLAR GMBH
    Inventors: Bernd WILDPANNER, Hillmar VON CAMPE, Werner BUSS