Abstract: A tunable plasmon resonator, comprising a plasmon resonance layer made of graphene, a crystalline group-IV-semiconductor material or a crystalline group-III-V semiconductor material, and arranged on a carrier substrate, the plasmon resonance layer having a plasmon resonance region that is exposed to a sensing volume and a tuning device that is integrated into the plasmon resonator and arranged and configured to modify a density of free charge carriers in the plasmon resonance region or to modify an effective mass amount of the free charge carriers in the plasmon resonance region by applying of a control voltage to tuning control electrode(s) of the tuning device, thereby setting a plasmon frequency of plasmon polaritons in the plasmon resonance region to a desired plasmon frequency value within a plasmon frequency tuning interval, for resonance excitation of plasmon polaritons by incident electromagnetic waves of a frequency corresponding to the set plasmon frequency value.

Abstract: A tunable plasmon resonator, comprising a plasmon resonance layer made of graphene, a crystalline group-IV-semiconductor material or a crystalline group-III-V semiconductor material, and arranged on a carrier substrate, the plasmon resonance layer having a plasmon resonance region that is exposed to a sensing volume and a tuning device that is integrated into the plasmon resonator and arranged and configured to modify a density of free charge carriers in the plasmon resonance region or to modify an effective mass amount of the free charge carriers in the plasmon resonance region by applying of a control voltage to tuning control electrode(s) of the tuning device, thereby setting a plasmon frequency of plasmon polaritons in the plasmon resonance region to a desired plasmon frequency value within a plasmon frequency tuning interval, for resonance excitation of plasmon polaritons by incident electromagnetic waves of a frequency corresponding to the set plasmon frequency value.

Abstract: A high-speed, directly modulated ridge waveguide laser includes: a ridge structure at a junction surface of the laser chip; and a plurality of pads only on non-active areas of the junction surface, where the plurality of pads protrude beyond an edge of the ridge structure. The laser chip can thus be held by a manufacturing tool, such that the manufacturing tool abuts the pads without abutting the ridge structure. In this manner, the ridge structure of the laser is protected from damage due to contacts by manufacturing tools, increasing the device yield of a wafer. By providing the pads only on the non-active areas of the junction surface, parasitic capacitance for contacts in the active areas can be properly controlled.

Abstract: A semiconductor complex coupled light emitting device is disclosed having a lower cladding layer, an optical cavity formed adjacent the lower cladding layer and an upper cladding layer formed adjacent the optical cavity. The optical cavity includes a lower multi-quantum well active region formed from a first high reactivity material system and an upper multi-quantum well diffraction grating structure formed from a second low reactivity material system that is not subject to oxidation when etched.

Abstract: A semiconductor complex coupled light emitting device is disclosed having a lower cladding layer, an optical cavity formed adjacent the lower cladding layer and an upper cladding layer formed adjacent the optical cavity. The optical cavity includes a lower multi-quantum well active region formed from a first high reactivity material system and an upper multi-quantum well diffraction grating structure formed from a second low reactivity material system that is not subject to oxidation when etched.

Abstract: A high-speed, directly modulated ridge waveguide laser includes: a ridge structure at a junction surface of the laser chip; and a plurality of pads only on non-active areas of the junction surface, where the plurality of pads protrude beyond an edge of the ridge structure. The laser chip can thus be held by a manufacturing tool, such that the manufacturing tool abuts the pads without abutting the ridge structure. In this manner, the ridge structure of the laser is protected from damage due to contacts by manufacturing tools, increasing the device yield of a wafer. By providing the pads only on the non-active areas of the junction surface, parasitic capacitance for contacts in the active areas can be properly controlled.