Abstract: Flexible multilayer microwave or mm-wave circuits and sensors are provided having at least (a) a first metallization layer, at least a portion of the first metallization layer being adapted for operation at a frequency ranging from 20 GHz to 100 GHz; (b) a second metallization layer, at least a portion of the second metallization layer being adapted for operation as a ground plane; (c) a dielectric substrate layer, the dielectric substrate layer being disposed between the first and second metallization layers; and (d) a plurality of conductive vias extending through the dielectric substrate layer and electrically connecting portions of the first and second metallization layers.

Abstract: A surface-mountable mm-wave signal source is provided. The surface-mountable mm-wave signal source comprises: a conductive metal base; a mm-wave signal source disposed over an upper portion of the metal base; a first radio frequency transmission line carrying a quasi-TEM signal from the mm-wave signal source, which is disposed over an upper portion of the metal base and proximate the signal source; a first mode transformer at least partially integrated into the upper portion of the metal base to convert the quasi-TEM signal carried by the planar transmission line into a rectangular waveguide mode signal; a waveguide well having upper and lower ends disposed within the base for carrying the rectangular waveguide mode signal from an upper portion of the base to a lower portion of the base; and a second mode transformer at least partially integrated into the lower portion of the base to convert the rectangular waveguide mode signal to a quasi-TEM signal within a second radio frequency transmission line.

Abstract: Flexible multilayer microwave or mm-wave circuits and sensors are provided having at least (a) a first metallization layer, at least a portion of the first metallization layer being adapted for operation at a frequency ranging from 20 GHz to 100 GHz; (b) a second metallization layer, at least a portion of the second metallization layer being adapted for operation as a ground plane; (c) a dielectric substrate layer, the dielectric substrate layer being disposed between the first and second metallization layers; and (d) a plurality of conductive vias extending through the dielectric substrate layer and electrically connecting portions of the first and second metallization layers.

Abstract: A packaged integrated circuit (20, 20a, 20b) which includes at least one waveguide port (44, 44a, 44b) and at least one interconnect (26, 26a, 26b) which is electrically connected to an integrated circuit (30, 30a, 30b).

Abstract: An IC package appropriate for microwave devices, integrated circuits, multichip modules, and hybrid circuit assemblies and power devices comprises an outer interconnect (2) and an inner interconnect (3). Lead lines (8) on an outer interconnect (2) are in electric engagement with respective access lines (13) on an inner interconnect (3). Contacts (21) of an IC are electrically interconnected with the access lines (13) on the inner interconnect (3). A package according to the teachings of the present invention provides for efficient heat dissipation from the package interior and an efficient electrical transition from the interior of a package.