Abstract: A demodulation pixel architecture allows for demodulating an incoming modulated electromagnetic wave, normally visible or infrared light. It is based on a charge coupled device (CCD) line connected to a drift field structure. The drift field is exposed to the incoming light. It collects the generated charge and forces it to move to the pick-up point. At this pick-up point, the CCD element samples the charge for a given time and then shifts the charge packets further on in the daisy chain. After a certain amount of shifts, the multiple charge packets are stored in so-called integration gates, in a preferred embodiment. The number of integration gates gives the number of simultaneously available taps. When the cycle is repeated several times, the charge is accumulated in the integration gates and thus the signal-to-noise ratio increases. The architecture is flexible in the number of taps. A dump node can be attached to the CCD line for dumping charge with the same speed as the samples are taken.

Abstract: A pixel for detecting incident radiation (In) over a large area with high sensitivity and low power consumption. The pixel comprises a semiconductor substrate (1), covered by a thin insulating layer (2), on top of which a dendritic or arborescent gate structure (3) is arranged. The dendritic gate (3) is electrically connected at two or more contacts (C1, C2) with voltage sources, leading to the flow of a current and a position-dependent potential distribution in the gate (3). Due to the use of arborescent structures and various materials (31, 32), the pixel can be optimized for a certain application, in particular in terms of the electric field distribution, the RC time constant, the power consumption and the spectral sensitivity. Due to its compact size, the photo sensor can be arranged in linear or two-dimensional manner for the realization of line and area sensors.

Abstract: The pixel (1) for use in an image sensor comprises a plurality of small-sized radiation-sensitive elements (2.1-2.9) for converting incident radiation into electric signals, the radiation-sensitive elements (2.1-2.9) being properly interconnected to form a larger radiation-sensitive area. The pixel (1) further comprises a plurality of storage elements (3A-3D) for storing the electric signals. The pixel further comprises transfer means for transferring the electric signals from the radiation-sensitive elements (2.1-2.9) to any selected one of the storage elements (3A-3D). The pixel (1) exhibits a high optical sensitivity and a high demodulation speed, and is especially suited for distance-measuring sensors based on the time-of-flight (TOF) principle or interferometry.

Abstract: The pixel (1) for use in an image sensor comprises a plurality of small-sized radiation-sensitive elements (2.1-2.9) for converting incident radiation into electric signals, the radiation-sensitive elements (2.1-2.9) being properly interconnected to form a larger radiation-sensitive area. The pixel (1) further comprises a plurality of storage elements (3A-3D) for storing the electric signals. The pixel further comprises transfer means for transferring the electric signals from the radiation-sensitive elements (2.1-2.9) to any selected one of the storage elements (3A-3D). The pixel (1) exhibits a high optical sensitivity and a high demodulation speed, and is especially suited for distance-measuring sensors based on the time-of-flight (TOF) principle or interferometry.