Patents by Inventor Bernhard Cordts

Bernhard Cordts has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SIMOX using controlled water vapor for oxygen implants
    Patent number: 6989315
    Abstract: An ion implantation system for producing silicon wafers having relatively low defect densities, e.g., below about 1×106/cm2, includes a fluid port in the ion implantation chamber for introducing a background gas into the chamber during the ion implantation process. The introduced gas, such as water vapor, reduces the defect density of the top silicon layer that is separated from the buried silicon dioxide layer.
    Type: Grant
    Filed: June 19, 2001
    Date of Patent: January 24, 2006
    Assignee: Ibis Technology, Inc.
    Inventors: Robert Dolan, Bernhard Cordts, Marvin Farley, Geoffrey Ryding
  • Simox using controlled water vapor for oxygen implants
    Publication number: 20020016046
    Abstract: An ion implantation system for producing silicon wafers having relatively low defect densities, e.g., below about 1×106/cm2, includes a fluid port in the ion implantation chamber for introducing a background gas into the chamber during the ion implantation process. The introduced gas, such as water vapor, reduces the defect density of the top silicon layer that is separated from the buried silicon dioxide layer.
    Type: Application
    Filed: June 19, 2001
    Publication date: February 7, 2002
    Inventors: Robert Dolan, Bernhard Cordts, Marvin Farley, Geoffrey Ryding
  • SIMOX using controlled water vapor for oxygen implants
    Patent number: 6248642
    Abstract: An ion implantation system for producing silicon wafers having relatively low defect densities, e.g., below about 1×106/cm2, includes a fluid port in the ion implantation chamber for introducing a background gas into the chamber during the ion implantation process. The introduced gas, such as water vapor, reduces the defect density of the top silicon layer that is separated from the buried silicon dioxide layer.
    Type: Grant
    Filed: June 24, 1999
    Date of Patent: June 19, 2001
    Assignee: Ibis Technology Corporation
    Inventors: Robert Dolan, Bernhard Cordts, Marvin Farley, Geoffrey Ryding