Patents by Inventor Bernhard F. Cordts
Bernhard F. Cordts has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 6774376Abstract: A wafer holder assembly includes first and second main structural members from which first and second wafer-holding arms extend. The first arm is secured to the main structural members by a graphite distal retaining member. The second arm is pivotally biased to a wafer-hold position by a graphite bias member. This arrangement provides a conductive path from the wafer to the assembly for inhibiting electrical discharges from the wafer during the ion implantation process. The assembly can further include additional graphite retaining members for maintaining the structural integrity of the assembly during the extreme conditions associated with SIMOX wafer processing without the need for potentially wafer-contaminating adhesives and conventional fasteners. The wafer-contacting pins at the distal end of the arms can be formed from silicon. The silicon pins can be coated with titanium nitride to enhance electrical contact with the wafer and to provide an abrasion resistant surface.Type: GrantFiled: May 29, 2002Date of Patent: August 10, 2004Assignee: IBIS Technology CorporationInventors: Bernhard F. Cordts, III, Julian G. Blake
-
Publication number: 20030052282Abstract: A wafer holder assembly includes first and second main structural members from which first and second wafer-holding arms extend. The first arm is secured to the main structural members by a graphite distal retaining member. The second arm is pivotally biased to a wafer-hold position by a graphite bias member. This arrangement provides a conductive path from the wafer to the assembly for inhibiting electrical discharges from the wafer during the ion implantation process. The assembly can further include additional graphite retaining members for maintaining the structural integrity of the assembly during the extreme conditions associated with SIMOX wafer processing without the need for potentially wafer-contaminating adhesives and conventional fasteners. The wafer-contacting pins at the distal end of the arms can be formed from silicon. The silicon pins can be coated with titanium nitride to enhance electrical contact with the wafer and to provide an abrasion resistant surface.Type: ApplicationFiled: May 29, 2002Publication date: March 20, 2003Applicant: IBIS TECHNOLOGY CORPORATIONInventors: Bernhard F. Cordts, Julian G. Blake
-
Patent number: 6452195Abstract: A wafer holder assembly includes first and second main structural members from which first and second wafer-holding arms extend. The first arm is secured to the main structural members by a graphite distal retaining member. The second arm is pivotally biased to a wafer-hold position by a graphite bias member. This arrangement provides a conductive path from the wafer to the assembly for inhibiting electrical discharges from the wafer during the ion implantation process. The assembly can further include additional graphite retaining members for maintaining the structural integrity of the assembly during the extreme conditions associated with SIMOX wafer processing without the need for potentially wafer-contaminating adhesives and conventional fasteners. The wafer-contacting pins at the distal end of the arms can be formed from silicon. The silicon pins can be coated with titanium nitride to enhance electrical contact with the wafer and to provide an abrasion resistant surface.Type: GrantFiled: August 18, 1999Date of Patent: September 17, 2002Assignee: Ibis Technology CorporationInventors: Theodore H. Smick, Robert S. Andrews, Bernhard F. Cordts, III
-
Patent number: 6433342Abstract: A wafer holder assembly includes first and second main structural members from which first and second wafer-holding arms extend. The first arm is secured to the main structural members by a graphite distal retaining member. The second arm is pivotally biased to a wafer-hold position by a graphite bias member. This arrangement provides a conductive path from the wafer to the assembly for inhibiting electrical discharges from the wafer during the ion implantation process. The assembly can further include additional graphite retaining members for maintaining the structural integrity of the assembly during the extreme conditions associated with SIMOX wafer processing without the need for potentially wafer-contaminating adhesives and conventional fasteners. The wafer-contacting pins at the distal end of the arms can be formed from silicon. The silicon pins can be coated with titanium nitride to enhance electrical contact with the wafer and to provide an abrasion resistant surface.Type: GrantFiled: August 18, 1999Date of Patent: August 13, 2002Assignee: Ibis Technology CorporationInventors: Bernhard F. Cordts, III, Julian G. Blake
-
Patent number: 6423975Abstract: A wafer holder assembly includes first and second main structural members from which first and second wafer-holding arms extend. The first arm is secured to the main structural members by a graphite distal retaining member. The second arm is pivotally biased to a wafer-hold position by a graphite bias member. This arrangement provides a conductive path from the wafer to the assembly for inhibiting electrical discharges from the wafer during the ion implantation process. The assembly can further include additional graphite retaining members for maintaining the structural integrity of the assembly during the extreme conditions associated with SIMOX wafer processing without the need for potentially wafer-contaminating adhesives and conventional fasteners. The wafer-contacting pins at the distal end of the arms can be formed from silicon. The silicon pins can be coated with titanium nitride to enhance electrical contact with the wafer and to provide an abrasion resistant surface.Type: GrantFiled: August 18, 1999Date of Patent: July 23, 2002Assignee: Ibis Technology, Inc.Inventors: Theodore H. Smick, Geoffrey Ryding, Bernhard F. Cordts, III, Robert S. Andrews
-
Patent number: 6155436Abstract: A wafer holder assembly includes first and second main structural members from which first and second wafer-holding arms extend. The first arm is secured to the main structural members by a graphite distal retaining member. The second arm is pivotally biased to a wafer-hold position by a graphite bias member. This arrangement provides a conductive path from the wafer to the assembly for inhibiting electrical discharges from the wafer during the ion implantation process. The assembly can further include additional graphite retaining members for maintaining the structural integrity of the assembly during the extreme conditions associated with SIMOX wafer processing without the need for potentially wafer-contaminating adhesives and conventional fasteners. The wafer-contacting pins at the distal end of the arms can be formed from silicon. The silicon pins can be coated with titanium nitride to enhance electrical contact with the wafer and to provide an abrasion resistant surface.Type: GrantFiled: August 18, 1999Date of Patent: December 5, 2000Assignee: Ibis Technology CorporationInventors: Theodore H. Smick, Robert S. Andrews, Bernhard F. Cordts, III
-
Patent number: 4714641Abstract: A ferromagnetic film for magnetic recording comprises a copper substrate having particles of iron and iron oxides dispersed in the surface layer of the copper. The particles have maximum dimensions in the range between 50 and 500 Angstroms. The ferromagnetic film can be formed by ion implantation of iron ions into the copper substrate followed by heat treatment to permit growth of ferromagnetic particles to the desired size. As an alternative to ion implantation, the iron can be deposited on the copper substrate by sputtering or evaporation and mixed with the copper by ion beam mixing.Type: GrantFiled: March 4, 1985Date of Patent: December 22, 1987Assignee: Varian Associates, Inc.Inventor: Bernhard F. Cordts
-
Patent number: 4520040Abstract: A ferromagnetic film for magnetic recording comprises a copper substrate having particles of iron and iron oxides dispersed in the surface layer of the copper. The particles have maximum dimensions in the range between 50 and 500 Angstroms. The ferromagnetic film can be formed by ion implantation of iron ions into the copper substrate followed by heat treatment to permit growth of ferromagnetic particles to the desired size. As an alternative to ion implantation, the iron can be deposited on the copper substrate by sputtering or evaporation and mixed with the copper by ion beam mixing.Type: GrantFiled: December 15, 1983Date of Patent: May 28, 1985Assignee: Varian Associates, Inc.Inventor: Bernhard F. Cordts