Abstract: A method in which pattern elements with predetermined wall profiles and/or lateral shapes, differing from the shapes of the respective pattern elements in an irradiation mask which is used, are formed in a photoresist layer. The method comprises a modification of a conventional photolithographic process, where a substrate supporting the photoresist layer is shifted laterally relative to the mask or the mask image in a continuous mode or in steps during exposure. Also disclosed is an apparatus which shifts a substrate relative to a mask in the x- and/or the y-direction or shifts the path of the beam relative to the substrate, controlling the shifting in a predetermined manner. The method--especially in connection with the apparatus--allows formation of reproducible photoresist patterns with a great variety of differently formed wall profiles and/or lateral shapes. Using the method, photoresist patterns can be flexibly adapted to many applications.

Abstract: Disclosed is a method in which pattern elements with predetermined wall profiles and/or lateral shapes, differing from the shapes of the respective pattern elements in an irradiation mask which is used, are formed in a photoresist layer. The method comprises a modification of a conventional photolithographic process, where a substrate supporting the photoresist layer is shifted laterally relative to the mask or the mask image in a continuous mode and or in steps during exposure.Also disclosed is an apparatus which includes means for shifting a substrate relative to a mask into the x- and or the y-direction or means between the mask and the substrate for shifting the path of the beam relative to the substrate, and means for controlling the shifting means.The method--especially in connection with the apparatus--allows formation of reproducible photoresist patterns with a great variety of differently formed, wall profiles and/or lateral shapes.

Abstract: On a substrate (1) covered with a chromium layer (2), a positive resist layer (3) is applied, exposed through an exposure mask with the mask pattern corresponding to the negative of the respective chromium pattern, developed, and blanket-coated with a less than or equal to 10 nm thick layer (4) of silicon dioxide. Then photoresist layer (3) and the silicon layer (4) thereon are lifted off, and finally the chromium layer (2) is dry-etched, the remaining silicon dioxide layer (4) being used as an etch mask.Chromium masks are used e.g. in the production of semiconductor circuits. By means of the reverse process, structures whose smallest dimensions are in the micrometer and the submicrometer range can be transferred into chromium layers with sharp edges.