Abstract: A semiconductor device comprises a plurality of quantum structures comprising predominantly germanium. The plurality of quantum structures are formed on a first semiconductor layer structure. The quantum structures of the plurality of quantum structures have a lateral dimension of less than 15 nm and an area density of at least 8×1011 quantum structures per cm2. The plurality of quantum structures are configured to emit light with a light emission maximum at a wavelength of between 2 ?m and 10 ?m or to absorb light with a light absorption maximum at a wavelength of between 2 ?m and 10 ?m.

Abstract: A semiconductor device comprises a plurality of quantum structures comprising predominantly germanium. The plurality of quantum structures are formed on a first semiconductor layer structure. The quantum structures of the plurality of quantum structures have a lateral dimension of less than 15 nm and an area density of at least 8×1011 quantum structures per cm2. The plurality of quantum structures are configured to emit light with a light emission maximum at a wavelength of between 2 ?m and 10 ?m or to absorb light with a light absorption maximum at a wavelength of between 2 ?m and 10 ?m.

Abstract: A sensor system having coupling structures is disclosed. The system includes an input coupling structure, an interaction region, and an output coupling structure. The input coupling structure is configured to receive emitted light at a selected coupling efficiency and may provide filtering of the emitted light for a selected wavelength. The interaction region is coupled to the input coupling structure and configured to interact the light from the input coupling structure with a specimen. The output coupling structure is coupled to the interaction region and configured to provide interacted light from the interaction region to the detector.

Abstract: A sensor system having coupling structures is disclosed. The system includes an input coupling structure, an interaction region, and an output coupling structure. The input coupling structure is configured to receive emitted light at a selected coupling efficiency and may provide filtering of the emitted light for a selected wavelength. The interaction region is coupled to the input coupling structure and configured to interact the light from the input coupling structure with a specimen. The output coupling structure is coupled to the interaction region and configured to provide interacted light from the interaction region to the detector.

Abstract: A sensor system having a multi-pass interaction region is disclosed. The system includes an input region, a multi-pass region, and an output region. The input region is configured to receive emitted light. The multi-pass region is coupled to the input region and is configured to absorb portions of the emitted light according to a specimen proximate the multi-pass region. The output region is coupled to the multi-pass region and is configured to provide interacted light from the multi-pass region.

Abstract: A semiconductor device comprises a plurality of quantum structures comprising predominantly germanium. The plurality of quantum structures are formed on a first semiconductor layer structure. The quantum structures of the plurality of quantum structures have a lateral dimension of less than 15 nm and an area density of at least 8×1011 quantum structures per cm2. The plurality of quantum structures are configured to emit light with a light emission maximum at a wavelength of between 2 ?m and 10 ?m or to absorb light with a light absorption maximum at a wavelength of between 2 ?m and 10 ?m.

Abstract: Plasmonic and photonic wavelength separation structures are provided for guiding plasmonic wave signals and electromagnetic signals, respectively. A separation structure includes an input waveguide configured to guide a first wave signal, an output waveguide configured to guide a second wave signal; and a resonator structure that includes a closed loop pathway and is configured to receive a portion of the first wave signal from the input waveguide by coupling and to provide the second wave signal to the output waveguide based on the portion of the first wave signal by coupling. The input waveguide, the resonator structure and the output waveguide each comprise a wave guiding material for guiding the first wave signal and the second wave signal. The wave guiding material for the plasmonic wavelength separation structure may be a plasmonic wave guiding material. The wave guiding material for the photonic wavelength separation structure may be a semiconductor material.

Abstract: Some embodiments of the present disclosure relate to an infrared (IR) opto-electronic sensor having a silicon waveguide implemented on a single silicon integrated chip. The IR sensor has a semiconductor substrate having a silicon waveguide extends along a length between a radiation input conduit and a radiation output conduit. The radiation input conduit couples radiation into the silicon waveguide, while the radiation output conduit couples radiation out from the silicon waveguide. The silicon waveguide conveys the IR radiation from the radiation input conduit to the radiation output conduit at a single mode. As the radiation is conveyed by the silicon waveguide, an evanescent field is formed that extends outward from the silicon waveguide to interact with a sample positioned between the radiation input conduit and the radiation output conduit.

Abstract: A sensor system having coupling structures is disclosed. The system includes an input coupling structure, an interaction region, and an output coupling structure. The input coupling structure is configured to receive emitted light at a selected coupling efficiency and may provide filtering of the emitted light for a selected wavelength. The interaction region is coupled to the input coupling structure and configured to interact the light from the input coupling structure with a specimen. The output coupling structure is coupled to the interaction region and configured to provide interacted light from the interaction region to the detector.

Abstract: A sensor system having a multi-pass interaction region is disclosed. The system includes an input region, a multi-pass region, and an output region. The input region is configured to receive emitted light. The multi-pass region is coupled to the input region and is configured to absorb portions of the emitted light according to a specimen proximate the multi-pass region. The output region is coupled to the multi-pass region and is configured to provide interacted light from the multi-pass region.

Abstract: A sensor array for viscosity measurement includes the following: a carrier substrate formed with an opening; a metal plate-shaped oscillating element disposed on a surface of the carrier substrate and parallel to the surface over the opening; at least two metal contact electrodes disposed on the carrier substrate; at least two metal spring elements, wherein each of the contact electrodes is connected to the oscillating element by way of a spring element such that the element is mounted on the carrier substrate by way of the spring elements; and a magnet, which is disposed in the vicinity of the carrier substrate such that the magnetic field lines penetrate the plate-shaped oscillating element.

Abstract: Some embodiments of the present disclosure relate to an infrared (IR) opto-electronic sensor having a silicon waveguide implemented on a single silicon integrated chip. The IR sensor has a semiconductor substrate having a silicon waveguide extends along a length between a radiation input conduit and a radiation output conduit. The radiation input conduit couples radiation into the silicon waveguide, while the radiation output conduit couples radiation out from the silicon waveguide. The silicon waveguide conveys the IR radiation from the radiation input conduit to the radiation output conduit at a single mode. As the radiation is conveyed by the silicon waveguide, an evanescent field is formed that extends outward from the silicon waveguide to interact with a sample positioned between the radiation input conduit and the radiation output conduit.

Abstract: A sensor for measuring a liquid viscosity includes at least one piezo-electrical element in the form of a resonator, at least one first exciting electrode, and a second exciting electrode. At least the first exciting electrode is arranged on the sensitive surface of the sensor and, in order to reduce measuring time at predefined temperatures, the sensor is provided with a heating electrode for heating a measurable liquid.

Abstract: A sensor for measuring a liquid viscosity includes at least one piezo-electrical element in the form of a resonator, at least one first exciting electrode, and a second exciting electrode. At least the first exciting electrode is arranged on the sensitive surface of the sensor and, in order to reduce measuring time at predefined temperatures, the sensor is provided with a heating electrode for heating a measurable liquid.

Abstract: A viscosity sensor system for measuring the viscosity of a liquid and at least one additional property of the liquid using a piezoelectric viscosity sensor device that is situated completely in the liquid that is to be measured, and that has: electrical contact points for an electrical controlling of volume oscillations on its surface, these contact points being resistant in relation to the liquid; first electrical supply lines that are resistant in relation to the liquid and that are connected on the one hand with a control/evaluation electronics unit situated outside the liquid and on the other hand with the contact points on the surface of the viscosity sensor device; and a second sensor device for acquiring the at least one additional property of the liquid, this second device being provided on the surface of the viscosity sensor device and having electrical contact points on the surface of the viscosity sensor device for an electrical controlling, these electrical contact points being resistant in relati

Abstract: A device is provided for evaluating the signal from a viscosity sensor having an amplifying circuit. The amplification of the amplifying circuit is controlled by a temperature signal from a temperature sensor.

Abstract: A device for measuring fill levels, in particular liquid fill levels, is provided, which device has a capacitive sensor and, connected to the sensor, a unit for analyzing a measuring signal from the sensor. The device for measuring fill levels may be manufactured cost-effectively and enables highly accurate measurements. The sensor has at least two base components including finger-shaped electrodes projecting therefrom. The electrodes are situated offset from one another, and the base components are fixed in position with respect to one another by at least one fixing element, the fixing element being situated outside the overlapping area of the electrodes.

Abstract: A method and a device are proposed for measuring the viscosity of a liquid (12), a conclusion being reached on the temperature of the liquid (12 at the location of the viscosity sensor (20), starting from temperature measurements and/or viscosity measurements made in the past.

Abstract: A device for measuring the viscosity and/or the density of a fluid using a resonator capable of mechanical vibrations. The resonator is capable of being brought into contact with the fluid. An oscillator circuit is also provided, wherein the oscillator circuit has a first feedback network and a second feedback network.

Abstract: In a method for calculating a time-related fill level signal (h(t)) from a sensor signal (s(t)) of a fill level sensor for detection of the fill level of a liquid, the time-related fill level signal (h(t)) is calculated as a function of the sensor signal (s(t)) and the modeled runoff behavior of the liquid on the fill level sensor.