Abstract: A surface acoustic wave (SAW) device includes: a substrate, an interdigitated transducer including a plurality of interdigitated fingers disposed on a first surface of the substrate, and a reflector including a plurality of gratings also disposed on the first surface. At least one of: (1) a first group of the interdigitated fingers has a first finger pitch and a first finger metal pitch ratio, and a second group of the interdigitated fingers has a second finger pitch different from the first metal pitch and a second metal pitch ratio different from the first metal pitch ratio; and (2) a first group of the gratings has a first grating pitch and a first grating metal pitch ratio, and a second group of the gratings has a second grating metal pitch different from the first grating metal pitch and a second grating metal pitch ratio different from the first grating metal pitch ratio.

Abstract: A signal processing device includes a first acoustic resonator, a second acoustic resonator disposed on the first acoustic resonator, and a coupling layer between the first and the second acoustic resonators. The first acoustic resonator has a first electrical impedance and a first resonance frequency and includes a first set of electrodes, and a first piezoelectric layer having a first thickness, disposed between the first set of electrodes. The second acoustic resonator has a second electrical impedance and a second resonance frequency, and includes a second set of electrodes, and a second piezoelectric layer having a second thickness, wherein the second piezoelectric layer is disposed between the second set of electrodes. The first electrical impedance at a passband frequency of the device substantially differs from the second electrical impedance at the passband frequency of the device. The first and second resonance frequencies are substantially different from each other.

Abstract: A device comprises a substrate, an acoustic stack, and a distributed Bragg reflector. The acoustic stack comprises a first electrode formed on the substrate, a first piezoelectric layer formed on the first electrode, a second electrode formed on the first piezoelectric layer, a second piezoelectric layer formed on the second electrode, and a third electrode formed on the second piezoelectric layer. The distributed Bragg reflector is formed adjacent to the acoustic stack and provides it with acoustic isolation.

Abstract: A signal processing device includes a first acoustic resonator, a second acoustic resonator disposed on the first acoustic resonator, and a coupling layer between the first and the second acoustic resonators. The first acoustic resonator has a first electrical impedance and a first resonance frequency and includes a first set of electrodes, and a first piezoelectric layer having a first thickness, disposed between the first set of electrodes. The second acoustic resonator has a second electrical impedance and a second resonance frequency, and includes a second set of electrodes, and a second piezoelectric layer having a second thickness, wherein the second piezoelectric layer is disposed between the second set of electrodes. The first electrical impedance at a passband frequency of the device substantially differs from the second electrical impedance at the passband frequency of the device. The first and second resonance frequencies are substantially different from each other.

Abstract: A vertical cavity surface emitting laser system is provided including providing a epitaxially grown bottom spacer layer, an active layer on the epitaxially grown bottom spacer layer, a top spacer layer on the active layer, and etching a part of the epitaxially grown top spacer layer on a side opposite the active layer.

Abstract: A long-wavelength VCSEL system is provided including providing a bottom mirror, a heat sink surrounding the bottom mirror, a wafer on the bottom mirror and the heat sink, and a backside contact on the wafer on a side opposite the bottom mirror.

Abstract: The present invention provides a long-wavelength VCSEL system providing a buried layer, growing a top spacer layer on the buried layer, forming an active layer on the top spacer layer, and creating a current confinement structure in the buried layer with a post epitaxy ion implantation.

Abstract: Screenable vertical cavity surface emitting lasers (VCSELs) and methods of manufacturing the same are described. These systems and methods address the unique susceptibility of these devices to damage that otherwise might be caused by moisture intrusion into the etch holes that are used to form the index-guiding confinement regions. In one aspect, a VCSEL includes a vertical stack structure having a top surface. The vertical stack structure includes a top mirror, a bottom mirror, and a cavity region that is disposed between the top mirror and the bottom mirror and includes an active light generation region. At least one of the top mirror and the bottom mirror has at least one layer defining an aperture region. The vertical stack structure defines at least one sidewall area extending from the top surface to at least a depth corresponding to the aperture region. The is VCSEL further includes a defect indicator system that is disposed in a screening region at the sidewall area.

Abstract: In one aspect, a vertical cavity surface emitting laser (VCSEL) is operable to generate single-mode laser light at an operative wavelength. The VCSEL includes a light-emitting surface and a monolithic longitudinal stack structure. The longitudinal stack structure includes a first mirror, a second mirror, and a cavity region. The cavity region is disposed between the first mirror and the second mirror and includes an active light generation region and a cavity extension region. The longitudinal stack structure further includes an ion-implanted current confinement region. A VCSEL array incorporating the above described VCSEL and a method of making the above-described VCSEL also are described.