Abstract: In one embodiment, the semiconductor laser (1) comprises a semiconductor layer sequence (2) based on the material system AlInGaN with at least one active zone (22) for generating laser radiation. A heat sink (3) is thermally connected to the semiconductor layer sequence (2) and has a thermal resistance towards the semiconductor layer sequence (2). The semiconductor layer sequence (2) is divided into a plurality of emitter strips (4) and each emitter strip (4) has a width (b) of at most 0.3 mm in the direction perpendicular to a beam direction (R). The emitter strips (4) are arranged with a filling factor (FF) of less than or equal to 0.4. The filling factor (FF) is set such that laser radiation having a maximum optical output power (P) can be generated during operation.

Abstract: An edge emitting laser bar is disclosed. In an embodiment an edge-emitting laser bar includes an AlInGaN-based semiconductor layer sequence having a contact side and an active layer configured to generate laser radiation, a plurality of individual emitters arranged next to each other and spaced apart from one another in a lateral transverse direction, each emitter configured to emit laser radiation and a plurality of contact elements arranged next to each other and spaced apart from one another in the lateral transverse direction on the contact side for making electrical contact with the individual emitters, each contact element being assigned to an individual emitter, wherein each contact element is electrically conductively coupled to the semiconductor layer sequence via a contiguous contact region of the contact side so that a current flow between the semiconductor layer sequence and the contact element is possible via the contact region.

Abstract: The transport container for concentrated hydrogen peroxide comprises: a cuboid carrier frame; a liquid container provided inside the carrier frame (1) and frictionally connected thereto, said container having an internal volume of between 65 and 500 I and consisting of pure aluminium, chromium-nickel steel, a nickel-based alloy, or a steel coated with a polyolefin or clad on the inner face; a pressure equalisation device and a pressure relief valve, both of which are provided on the upper face of the liquid container; and at least one sealable opening of the liquid container for the charging and/or removal of hydrogen peroxide.

Abstract: A diode has a semiconductor body having a first and a second semiconductor body main side. The semiconductor body has a first semiconductor zone. The semiconductor body has a second semiconductor zone arranged on the first semiconductor zone in an inner region of the semiconductor body and not extending as far as the semiconductor body edge of the semiconductor body. The semiconductor body has a third semiconductor zone arranged on the second semiconductor zone and has a higher doping concentration than the second semiconductor zone. The semiconductor body has a fourth semiconductor zone arranged on the first semiconductor zone in a semiconductor body edge region and extending from the second semiconductor zone in the direction towards the semiconductor body edge as far as the semiconductor body edge.

Abstract: A diode has a semiconductor body having a first and a second semiconductor body main side, wherein the semiconductor body has a first semiconductor zone, wherein the semiconductor body has a second semiconductor zone arranged on the first semiconductor zone in an inner region of the semiconductor body and not extending as far as the semiconductor body edge of the semiconductor body, wherein the semiconductor body has a third semiconductor zone arranged on the second semiconductor zone and having a higher doping concentration than the second semiconductor zone, wherein the semiconductor body has a fourth semiconductor zone arranged on the first semiconductor zone in a semiconductor body edge region and extending from the second semiconductor zone in the direction towards the semiconductor body edge as far as the semiconductor body edge, wherein the semiconductor body has a cutout proceeding from a planar outer surface of the third semiconductor zone, which forms a surface region of the second semiconductor bod

Abstract: A device comprising a measuring device for determining the flow rate of a water stream, a measuring device for determining the concentration of hydrogen peroxide in the water stream, a measuring device for determining the concentration of peracetic acid in the water stream, a metering device for metering a reducing agent into the water stream downstream of the measuring devices for the concentrations, and a control device which, from the flow rate of the water stream, the concentration of hydrogen peroxide in the water stream and the concentration of peracetic acid in the water stream, calculates an amount of reducing agent for reducing the content of hydrogen peroxide and peracetic acid to a desired value and actuates the metering device for metering the reducing agent, makes possible reliable reduction of the content of hydrogen peroxide and peracetic acid in a water stream.

Abstract: A semiconductor component having at least one pn junction and an associated production method. The semiconductor component has a layer sequence of a first zone having a first dopant. The first zone faces a first main area. Adjacent to the first zone are a second zone having a low concentration of a second dopant, a subsequent buffer layer, the third zone, also having the second dopant and a subsequent fourth zone having a high concentration of the second dopant. The fourth zone faces a second main area. In this case, the concentration of the second doping of the buffer layer is higher at the first interface of the barrier layer with the second zone than at the second interface with the fourth zone. According to the invention, the buffer layer is produced by ion implantation.

Abstract: A power semiconductor component having a pn junction, a body with a first basic conductivity, a well-like region with a second conductivity which is arranged horizontally centrally in the body, has a first two-level doping profile and has a first penetration depth from the first main surface into the body. In addition, this power semiconductor component has an edge structure which is arranged between the well-like region and the edge of the power semiconductor component and which comprises a plurality of field rings with a single-level doping profile, a second conductivity and a second penetration depth, wherein the first penetration depth is no more than about 50% of the second penetration depth.

Abstract: The invention relates to a control device, in particular for an aircraft, having a multiaxially tiltable joystick for the actuation of signal transducers, in particular for the pitch control and roll control of an aircraft, as well as having a cardan-like joint by means of which the joystick is tiltable about different pivot axes, said joint furthermore having at least one freewheel for a tilt movement of the joystick about one of the pivot axes. In accordance with the invention, the freewheel is formed by a lever mechanism or by an elastic component.

Abstract: A power semiconductor component having a pn junction, a body with a first basic conductivity, a well-like region with a second conductivity which is arranged horizontally centrally in the body, has a first two-level doping profile and has a first penetration depth from the first main surface into the body. In addition, this power semiconductor component has an edge structure which is arranged between the well-like region and the edge of the power semiconductor component and which comprises a plurality of field rings with a single-level doping profile, a second conductivity and a second penetration depth, wherein the first penetration depth is no more than about 50% of the second penetration depth.

Abstract: A power semiconductor component and a method for producing such a component. The component comprises a semiconductor base body having a first doping. A pn junction is formed in the base body by a contact region having a second doping with a first doping profile. A field ring structure has a second doping with a second doping profile. The contact region and the field ring structure are arranged at respectively assigned first and second partial areas of a first surface of the base body. Both extend into the base body, wherein the base body has, for the field ring structure, a trench-type cutout assigned to each respective field ring, the surface of said cutout following the contour of the assigned doping profile.

Abstract: A power semiconductor component and method for producing it. The component has a semiconductor base body with a first doping and a pn junction formed by a contact region having a second doping with a doping profile in the base body. The second contact region is arranged at a second surface of the base body and extends into the base body. The base body has a trench-type cutout with an edge area and a base area, wherein the base area is formed as a second partial area of the second surface, and wherein the second contact region extends from the base area via the edge area as far as a first partial area. Furthermore, the pn junction has a curvature adjacent to the edge area.

Abstract: A semiconductor component having at least one pn junction and an associated production method. The semiconductor component has a layer sequence of a first zone having a first dopant. The first zone faces a first main area. Adjacent to the first zone are a second zone having a low concentration of a second dopant, a subsequent buffer layer, the third zone, also having the second dopant and a subsequent fourth zone having a high concentration of the second dopant. The fourth zone faces a second main area. In this case, the concentration of the second doping of the buffer layer is higher at the first interface of the barrier layer with the second zone than at the second interface with the fourth zone. According to the invention, the buffer layer is produced by ion implantation.

Abstract: An apparatus for generating a rotational movement of a shaft with a first device for generating a rotational movement, driving a first drive path, and a second device for generating a rotational movement, driving a second drive path, at least one rotatable planet pinion being arranged on the shaft and the first drive path engaging with the planet pinion via an inner toothed wheel work of a ring gear and the second drive path engaging with the planet pinion via an outer toothed wheel work of a sun wheel.

Abstract: The present invention provides peptides as inhibitors of the binding of urokinase to the urokinase receptor. The peptides have the general structural formula (I): X1-[X2]n-X3-X4-K-Y-F-X5-X6-I-X7-W-[X8]m  (I) in which X1, X2, X3, X4, X5, X6, X7 and X8 each denote an aminocarboxylic acid, n and m are each independently 0 or 1, K denotes an aminocarboxylic acid with a lysine side chain, Y denotes an aminocarboxylic acid with a tyrosine side chain, F denotes an aminocarboxylic acid with a phenyl-alanine side chain, I denotes an aminocarboxylic acid with an isoleucine side chain, W denotes an aminocarboxylic acid with a tryptophan side chain, and the monomeric building blocks are linked by —CONR1— or —NR1CO— bonds where R1 in each case independently denotes hydrogen, methyl or ethyl, and pharmaceutically compatible salts and derivatives thereof.

Abstract: New compounds of formula I wherein: R and R1 are independently selected from hydrogen, (C1-C6)alkyl, styryl and (C3-C6)cycloalkyl or, taken together with the carbon to which they are linked, form a (C3-C6)cycloalkyl group; A is selected from the following groups: —CH2C≡CCH2—, or —(CH2)q—NH—(CH2)q—, wherein q is an integer from 2 to 3 B is selected from T is selected from —CH2—C≡CH, —C≡CH, —(CH2)p—R3, —CH═CH—R3, —CH2—NHCO—R3, —(CH2)p—O—R3, —CH(NH2)—CH2R3, in which p is 0 or an integer from 1 to 4, R3 is a carbocyclic or heterocyclic ring as medicaments having antitumor and/or antimetastatic activities.