Abstract: A film resistor and a thin-film sensor are disclosed. In an embodiment a film resistor includes a piezoresistive layer including a first transition metal carbide.

Abstract: In an embodiment a sensor device for arrangement on a mouth-nose protection includes a sensor unit having at least one sensor element configured to detect individual breathing processes of a user when the mouth-nose protection with the sensor device is used by a user and an evaluation unit configured to count the breathing processes of the user depending on a detection signal provided by the sensor unit and provide an evaluation signal for a signaling unit depending on a determined number of breathing processes.

Abstract: In an embodiment a sensor element includes at least one carrier having a top side and a bottom side, the top side being electrically insulating, at least one functional layer including a material with a temperature-dependent electrical resistance, the functional layer being arranged on the carrier, at least two electrodes arranged on the carrier at a distance from one another and at least two contact pads configured for electrically contacting the sensor element, wherein a respective contact pad is arranged directly on a partial region of one of the electrodes, wherein the sensor element is configured to measure a temperature, and wherein the sensor element is configured for direct integration into an electrical system as a discrete component.

Abstract: A film resistor and a film sensor are disclosed. In an embodiment a film resistor includes a piezoresistive layer comprising a M1+nAXn phase, wherein M comprises at least one transition metal, A comprises a main-group element, and X comprises carbon and/or nitrogen, and wherein n=1, 2 or 3.

Abstract: A sensor module has a first sensor element and a second sensor element. The first sensor element and the second sensor element are accommodated in a common housing of the sensor module. The sensor module includes a conductor structure that comprises an electrode structure and a separate connection structure. The connection structure is connected in an electrically conductive manner to the first sensor element and the electrode structure is allocated to the second sensor element.

Abstract: A film resistor and a thin-film sensor are disclosed. In an embodiment a film resistor includes a piezoresistive layer including a first transition metal carbide.

Abstract: A film resistor and a film sensor are disclosed. In an embodiment a film resistor includes a piezoresistive layer comprising a M1+nAXn phase, wherein M comprises at least one transition metal, A comprises a main-group element, and X comprises carbon and/or nitrogen, and wherein n=1, 2 or 3.

Abstract: A MEMS yaw-rate sensor is disclosed. In an embodiment, the MEMS yaw-rate sensor includes a first primary mass configured to perform a primary oscillation relative to a main body, a first secondary mass connected to the first primary mass via a first suspension such that a primary movement of the first primary mass excites a primary movement of the first secondary mass and a secondary movement of the first secondary mass relative to the first primary mass is permitted, a first magnetic-field-generating element and a first magnet-sensitive element, one being arranged on the main body and one being arranged on the first primary mass, wherein the first magnet-sensitive element is configured to determine the primary movement of the first primary mass relative to the main body and a second magnetic-field-generating element and a second magnet-sensitive element.

Abstract: A device, an arrangement, and a method for measuring a current intensity in a primary conductor through which current flows are disclosed. In an embodiment, an apparatus includes a magnetic field-generating element configured to generate a reference magnetic field; and a magnetic field angle-sensitive element configured to measure an orientation of a total magnetic field, the total magnetic field is produced by overlapping of the primary magnetic field and the reference magnetic field in space, wherein the primary magnetic field and the reference magnetic field are not parallel to one another at a location of the magnetic field angle-sensitive element, and wherein the current intensity of the current flowing through the primary conductor is determinable from the orientation of the total magnetic field in space.

Abstract: A pressure sensor system having a pressure sensor chip is specified. The pressure sensor chip is mounted on a mounting receptacle of a ceramic housing body having a pressure feed guided to the pressure sensor chip. The housing body is three-dimensionally shaped and monolithically formed and is formed by a ceramic material having a coefficient of thermal expansion which deviates by less than 30% from the coefficient of thermal expansion of the pressure sensor chip in a temperature range of greater than or equal to ?40° C. and less than or equal to 150° C.

Abstract: A sensor is disclosed. In an embodiment, the sensor includes a fixed structure, a movable structure movable relative to the fixed structure, a magnet configured to generate a magnetic field and a first magnetically sensitive element configured to determine the magnetic field at a position of the first magnetically sensitive element. The magnet is fastened to the fixed structure and the first magnetically sensitive element is fastened to the movable structure. Alternatively, the magnet is fastened to the movable structure and the first magnetically sensitive element is fastened to the fixed structure.

Abstract: A pressure sensor system having a pressure sensor chip is specified. The pressure sensor chip is mounted on a mounting receptacle of a ceramic housing body having a pressure feed guided to the pressure sensor chip. The housing body is three-dimensionally shaped and monolithically formed and is formed by a ceramic material having a coefficient of thermal expansion which deviates by less than 30% from the coefficient of thermal expansion of the pressure sensor chip in a temperature range of greater than or equal to ?40° C. and less than or equal to 150° C.

Abstract: A device, an arrangement, and a method for measuring a current intensity in a primary conductor through which current flows are disclosed. In an embodiment, an apparatus includes a magnetic field-generating element configured to generate a reference magnetic field; and a magnetic field angle-sensitive element configured to measure an orientation of a total magnetic field, the total magnetic field is produced by overlapping of the primary magnetic field and the reference magnetic field in space, wherein the primary magnetic field and the reference magnetic field are not parallel to one another at a location of the magnetic field angle-sensitive element, and wherein the current intensity of the current flowing through the primary conductor is determinable from the orientation of the total magnetic field in space.

Abstract: A sensor module has a first sensor element and a second sensor element. The first sensor element and the second sensor element are accommodated in a common housing of the sensor module. The sensor module includes a conductor structure that comprises an electrode structure and a separate connection structure. The connection structure is connected in an electrically conductive manner to the first sensor element and the electrode structure is allocated to the second sensor element.

Abstract: A sensor system includes a sensor chip mounted on a mounting receptacle of a ceramic housing body. The housing body is shaped three-dimensionally and embodied monolithically and is formed by a ceramic material having a coefficient of thermal expansion which deviates from the coefficient of thermal expansion of the sensor chip by less than 30% in a temperature range of greater than or equal to ?40° C. and less than or equal to 150° C.

Abstract: A pressure sensor system having a pressure sensor chip is specified, which is mounted on a mounting receptacle of a ceramic housing body having a pressure feed guided to the pressure sensor chip. The housing body is three-dimensionally shaped and monolithically formed and is formed by a ceramic material having a coefficient of thermal expansion which deviates by less than 30% from the coefficient of thermal expansion of the pressure sensor chip in a temperature range of greater than or equal to ?40° C. and less than or equal to 150° C.

Abstract: A micromechanical measuring element has a sensitive element that comprises a diaphragm with an underside and an upper side. The micromechanical measuring element also has a cap, which is connected directly to the sensitive element. The sensitive element and the cap form a first chamber, which has a first opening.

Abstract: A pressure sensor (1) is provided which has a piezoresistive membrane (2) which can be deformed by the action of the pressure of a medium. The membrane (2) is arranged on a carrier substrate (3) and extends over an opening (32) in the carrier substrate (3). The pressure sensor (1) has a protective layer (4) to protect the membrane (2) from direct contact with a medium. The protective layer (4) covers the membrane (2) both in a first region (28) inside the opening (32) and in a second region (29) outside the opening (32). Furthermore, a process for producing a pressure sensor (1) is provided in which the protective layer (4) forms an etch stop for an etching process.

Abstract: A temperature-measuring device with a sensing head and a pipe piece is disclosed. The sensing head is embedded in the pipe piece. The pipe piece is provided for conducting a medium whose temperature is detected by the sensing head.

Abstract: A probe includes a sensing element and a carrier for the sensing element. The carrier has an integrated device for guiding an air stream to the sensing element, and a long axis perpendicular to a plane defined by the flow direction of the air stream. The probe is substantially symmetric with respect to the plane.