Patents by Inventor Bernhard Stojetz
Bernhard Stojetz has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 11011887Abstract: A semiconductor laser diode is disclosed. In an embodiment a semiconductor laser diode includes a semiconductor layer sequence including an active layer having a main extension plane, configured to generate light in an active region during operation and configured to radiate the light via a light-outcoupling surface, wherein the active region extends from a rear surface opposite the light-outcoupling surface to the light-outcoupling surface along a longitudinal direction in the main extension plane and a continuous contact structure directly disposed on a surface of the semiconductor layer sequence, wherein the contact structure comprises in at least a first contact region a first electrical contact material in direct contact with the surface region and in at least a second contact region a second electrical contact material in direct contact with the surface region, and wherein the first and second contact regions adjoin one another.Type: GrantFiled: December 21, 2017Date of Patent: May 18, 2021Assignee: OSRAM OLED GMBHInventors: Sven Gerhard, Christoph Eichler, Alfred Lell, Bernhard Stojetz
-
Patent number: 11004876Abstract: A method for producing a semiconductor chip (100) is provided, in which, during a growth process for growing a first semiconductor layer (1), an inhomogeneous lateral temperature distribution is created along at least one direction of extent of the growing first semiconductor layer (1), such that a lateral variation of a material composition of the first semiconductor layer (1) is produced. A semiconductor chip (100) is additionally provided.Type: GrantFiled: July 31, 2019Date of Patent: May 11, 2021Assignee: OSRAM OLED GMBHInventors: Christoph Eichler, Andre Somers, Harald Koenig, Bernhard Stojetz, Andreas Loeffler, Alfred Lell
-
Patent number: 10985529Abstract: A semiconductor laser diode includes a semiconductor layer sequence with an active layer having a main extension plane and that generates light in an active region and emits light via a light outcoupling surface during operation, wherein the active region extends from a rear surface opposite the light outcoupling surface to the light outcoupling surface along a longitudinal direction, the semiconductor layer sequence includes a trench structure having at least one trench or a plurality of trenches on at least one side laterally next to the active region, and each trench of the trench structure extends in a longitudinal direction and projects from a top side of the semiconductor layer sequence in a vertical direction into the semiconductor layer sequence, and the trench structure varies in a lateral and/or vertical and/or longitudinal direction with respect to properties of the at least one trench or the plurality of trenches.Type: GrantFiled: July 12, 2017Date of Patent: April 20, 2021Assignee: OSRAM OLED GmbHInventors: Sven Gerhard, Christoph Eichler, Alfred Lell, Bernhard Stojetz
-
Publication number: 20200321749Abstract: A semiconductor laser diode includes a semiconductor layer sequence with an active layer having a main extension plane and that generates light in an active region and emits light via a light outcoupling surface during operation, wherein the active region extends from a rear surface opposite the light outcoupling surface to the light outcoupling surface along a longitudinal direction, the semiconductor layer sequence includes a trench structure having at least one trench or a plurality of trenches on at least one side laterally next to the active region, and each trench of the trench structure extends in a longitudinal direction and projects from a top side of the semiconductor layer sequence in a vertical direction into the semiconductor layer sequence, and the trench structure varies in a lateral and/or vertical and/or longitudinal direction with respect to properties of the at least one trench or the plurality of trenches.Type: ApplicationFiled: July 12, 2017Publication date: October 8, 2020Inventors: Sven Gerhard, Christoph Eichler, Alfred Lell, Bernhard Stojetz
-
Publication number: 20200303898Abstract: A semiconductor light source is disclosed. In one embodiment, a semiconductor light source includes at least one semiconductor laser configured to generate a primary radiation and at least one conversion element configured to generate a longer-wave visible secondary radiation from the primary radiation, wherein the conversion element includes a semiconductor layer sequence having one or more quantum well layers, wherein, in operation, the primary radiation is irradiated into the semiconductor layer sequence parallel to a growth direction thereof, with a tolerance of at most 15°, wherein, in operation, the semiconductor layer sequence is homogeneously illuminated with the primary radiation, and wherein a growth substrate of the semiconductor layer sequence is located between the semiconductor layer sequence and the semiconductor laser, the growth substrate being oriented perpendicular to the growth direction.Type: ApplicationFiled: June 2, 2020Publication date: September 24, 2020Inventors: Bernhard Stojetz, Alfred Lell, Christoph Eichler, Andreas Loeffler
-
Publication number: 20200295534Abstract: An edge emitting laser bar is disclosed. In an embodiment an edge-emitting laser bar includes an AlInGaN-based semiconductor layer sequence having a contact side and an active layer configured to generate laser radiation, a plurality of individual emitters arranged next to each other and spaced apart from one another in a lateral transverse direction, each emitter configured to emit laser radiation and a plurality of contact elements arranged next to each other and spaced apart from one another in the lateral transverse direction on the contact side for making electrical contact with the individual emitters, each contact element being assigned to an individual emitter, wherein each contact element is electrically conductively coupled to the semiconductor layer sequence via a contiguous contact region of the contact side so that a current flow between the semiconductor layer sequence and the contact element is possible via the contact region.Type: ApplicationFiled: August 21, 2018Publication date: September 17, 2020Inventors: Alfred Lell, Muhammad Ali, Bernhard Stojetz, Harald Koenig
-
Publication number: 20200259309Abstract: A light-emitting semiconductor component (99) comprising a laser bar (100) comprising at least two individual emitters (2), and a conversion element (300) arranged downstream of the laser bar (100) in the beam path, wherein at least some of the individual emitters (2) are arranged side by side in a lateral transverse direction (X), the laser bar (100) is formed with a nitride compound semiconductor material, the individual emitters (2) are configured to emit primary radiation (L1) during normal operation and the conversion element (300) is configured to convert at least part of the primary radiation (L1) into secondary radiation (L2), the secondary radiation (L2) having a longer wavelength than the primary radiation (L1).Type: ApplicationFiled: September 12, 2018Publication date: August 13, 2020Inventors: Alfred LELL, Muhammad ALI, Bernhard STOJETZ, Harald KÖNIG
-
Patent number: 10727645Abstract: A semiconductor light source is disclosed. In one embodiment, a semiconductor light source includes at least one semiconductor laser for generating a primary radiation and at least one conversion element for generating a longer-wave visible secondary radiation from the primary radiation, wherein the conversion element for generating the secondary radiation comprises a semiconductor layer sequence having one or more quantum well layers, and wherein, in operation, the primary radiation is irradiated into the semiconductor layer sequence perpendicular to a growth direction thereof, with a tolerance of at most 15°.Type: GrantFiled: March 13, 2017Date of Patent: July 28, 2020Assignee: OSRAM OLED GmbHInventors: Bernhard Stojetz, Alfred Lell, Christoph Eichler, Andreas Löffler
-
Patent number: 10714901Abstract: In an embodiment a laser include a semiconductor layer sequence having an active zone for generating radiation and an electrical contact web arranged on a top side of the semiconductor layer sequence, wherein the contact web is located on the top side only in an electrical contact region or is in electrical contact with the top side only in the contact region so that the active zone is supplied with current only in places during operation, wherein the contact web comprises a plurality of metal layers at least partially stacked one above the other, wherein at least one of the metal layers comprises a structuring so that the at least one metal layer only partially covers the contact region and has at least one opening or interruption, and wherein the structuring reduces stresses of the semiconductor layer sequence on account of different thermal expansion coefficients of the metal layers.Type: GrantFiled: March 27, 2017Date of Patent: July 14, 2020Assignee: OSRAM OLED GMBHInventors: Bernhard Stojetz, Georg Brüderl
-
Patent number: 10693033Abstract: A semiconductor chip (100) is provided, having a first semiconductor layer (1), which has a lateral variation of a material composition along at least one direction of extent. Additionally provided is a method for producing a semiconductor chip (100).Type: GrantFiled: June 25, 2019Date of Patent: June 23, 2020Assignee: OSRAM OLED GMBHInventors: Alfred Lell, Andreas Löffler, Christoph Eichler, Bernhard Stojetz, André Somers
-
Publication number: 20200194957Abstract: A semiconductor laser diode is disclosed. In an embodiment a semiconductor laser diode includes a first resonator and a second resonator, the first and second resonators having parallel resonator directions along a longitudinal direction and being monolithically integrated into the semiconductor laser diode, wherein the first resonator includes at least a part of a semiconductor layer sequence having an active layer and an active region configured to be electrically pumped to generate a first light, wherein the longitudinal direction is parallel to a main extension plane of the active layer, and wherein the second resonator has an active region with a laser-active material configured to be optically pumped by at least a part of the first light to produce a second light which is partially emitted outwards from the second resonator.Type: ApplicationFiled: May 17, 2018Publication date: June 18, 2020Inventors: Bernhard Stojetz, Christoph Eichler, Alfred Lell, Sven Gerhard
-
Patent number: 10673201Abstract: A semiconductor light source includes a laser and at least one phosphor, wherein the laser includes a semiconductor body having at least one active zone that generates laser radiation, at least one resonator having resonator mirrors and having a longitudinal axis is formed in the laser so that the laser radiation is guided and amplified along the longitudinal axis during operation and the active zone is located at least partially in the resonator, and the phosphor is optically coupled to the resonator in a gap-free manner so that in the direction transverse to the longitudinal axis at least part of the laser radiation is introduced into the phosphor and converted into a secondary radiation having a greater wavelength.Type: GrantFiled: June 7, 2017Date of Patent: June 2, 2020Assignee: OSRAM OLED GmbHInventors: Christoph Eichler, Sven Gerhard, Alfred Lell, Bernhard Stojetz
-
Publication number: 20200161836Abstract: A semiconductor laser diode is specified, the semiconductor laser diode includes a semiconductor layer sequence having an active layer which has a main extension plane and which, in operation, is adapted to generate light in an active region and to emit light via a light-outcoupling surface, the active region extending from a rear surface opposite the light-outcoupling surface to the light-outcoupling surface along a longitudinal direction in the main extension plane, the semiconductor layer sequence having a surface region on which a first cladding layer is applied in direct contact, the first cladding layer having a transparent material from a material system different from the semiconductor layer sequence, and the first cladding layer being structured and having a first structure.Type: ApplicationFiled: June 8, 2018Publication date: May 21, 2020Inventors: Sven Gerhard, Christoph Eichler, Alfred Lell, Bernhard Stojetz
-
Patent number: 10637211Abstract: A light-emitting semiconductor chip (100) is provided, having a first semiconductor layer (1), which is at least part of an active layer provided for generating light and which has a lateral variation of a material composition along at least one direction of extent. Additionally provided is a method for producing a semiconductor chip (100).Type: GrantFiled: May 12, 2017Date of Patent: April 28, 2020Assignee: OSRAM OLED GMBHInventors: Christoph Eichler, Andre Somers, Bernhard Stojetz, Andreas Loeffler, Alfred Lell
-
Patent number: 10630057Abstract: In an embodiment a laser include a semiconductor layer sequence having an active zone for generating radiation and an electrical contact web arranged on a top side of the semiconductor layer sequence, wherein the contact web is located on the top side only in an electrical contact region or is in electrical contact with the top side only in the contact region so that the active zone is supplied with current only in places during operation, wherein the contact web comprises a plurality of metal layers at least partially stacked one above the other, wherein at least one of the metal layers comprises a structuring so that the at least one metal layer only partially covers the contact region and has at least one opening or interruption, and wherein the structuring reduces stresses of the semiconductor layer sequence on account of different thermal expansion coefficients of the metal layers.Type: GrantFiled: March 27, 2017Date of Patent: April 21, 2020Assignee: OSRAM OLED GMBHInventors: Bernhard Stojetz, Georg Brüderl
-
Publication number: 20200091681Abstract: A semiconductor laser diode is disclosed. In an embodiment a semiconductor laser diode includes a semiconductor layer sequence including an active layer having a main extension plane, configured to generate light in an active region during operation and configured to radiate the light via a light-outcoupling surface, wherein the active region extends from a rear surface opposite the light-outcoupling surface to the light-outcoupling surface along a longitudinal direction in the main extension plane and a continuous contact structure directly disposed on a surface of the semiconductor layer sequence, wherein the contact structure comprises in at least a first contact region a first electrical contact material in direct contact with the surface region and in at least a second contact region a second electrical contact material in direct contact with the surface region, and wherein the first and second contact regions adjoin one another.Type: ApplicationFiled: December 21, 2017Publication date: March 19, 2020Inventors: Sven Gerhard, Christoph Eichler, Alfred Lell, Bernhard Stojetz
-
Publication number: 20190355768Abstract: A method for producing a semiconductor chip (100) is provided, in which, during a growth process for growing a first semiconductor layer (1), an inhomogeneous lateral temperature distribution is created along at least one direction of extent of the growing first semiconductor layer (1), such that a lateral variation of a material composition of the first semiconductor layer (1) is produced. A semiconductor chip (100) is additionally provided.Type: ApplicationFiled: July 31, 2019Publication date: November 21, 2019Inventors: Christoph EICHLER, Andre SOMERS, Harald KOENIG, Bernhard STOJETZ, Andreas LOEFFLER, Alfred LELL
-
Publication number: 20190319162Abstract: A semiconductor chip (100) is provided, having a first semiconductor layer (1), which has a lateral variation of a material composition along at least one direction of extent. Additionally provided is a method for producing a semiconductor chip (100).Type: ApplicationFiled: June 25, 2019Publication date: October 17, 2019Inventors: Alfred LELL, Andreas LÖEFFLER, Christoph EICHLER, Bernhard STOJETZ, André SOMERS
-
Patent number: 10396106Abstract: A method for producing a semiconductor chip (100) is provided, in which, during a growth process for growing a first semiconductor layer (1), an inhomogeneous lateral temperature distribution is created along at least one direction of extent of the growing first semiconductor layer (1), such that a lateral variation of a material composition of the first semiconductor layer (1) is produced. A semiconductor chip (100) is additionally provided.Type: GrantFiled: May 12, 2017Date of Patent: August 27, 2019Assignee: OSRAM OPTO SEMICONDUCTORS GMBHInventors: Christoph Eichler, Andre Somers, Harald Koenig, Bernhard Stojetz, Andreas Loeffler, Alfred Lell
-
Patent number: 10388823Abstract: A semiconductor chip (100) is provided, having a first semiconductor layer (1), which has a lateral variation of a material composition along at least one direction of extent. Additionally provided is a method for producing a semiconductor chip (100).Type: GrantFiled: May 12, 2017Date of Patent: August 20, 2019Assignee: OSRAM OPTO SEMICONDUCTORS GMBHInventors: Alfred Lell, Andreas Loeffler, Christoph Eichler, Bernhard Stojetz, Andre Somers