Patents by Inventor Bernhard Stuetzel

Bernhard Stuetzel has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9153432
    Abstract: The invention relates to a process for producing an oxygen-containing surface or interface of a silicon layer, which is arranged on a substrate, especially in the production of photovoltaic units.
    Type: Grant
    Filed: June 20, 2011
    Date of Patent: October 6, 2015
    Assignee: Evonik Degussa GmbH
    Inventors: Bernhard Stuetzel, Wolfgang Fahrner
  • Patent number: 9096922
    Abstract: The invention relates to a formulation which contains at least one silane and at least one carbon polymer in a solvent, and to the production of a silicon layer on a substrate which is coated with such a formulation.
    Type: Grant
    Filed: October 18, 2010
    Date of Patent: August 4, 2015
    Assignee: Evonik Degussa GmbH
    Inventors: Bernhard Stuetzel, Matthias Patz
  • Patent number: 8969610
    Abstract: The present invention relates to a method for oligomerizing hydridosilanes, wherein a composition comprising substantially at least one non-cyclic hydridosilane having a maximum of 20 silicon atoms as the hydridosilane is thermally converted at temperatures below 235° C. in the absence of a catalyst, the oligomers that can be produced according to the method, and the use thereof.
    Type: Grant
    Filed: February 16, 2011
    Date of Patent: March 3, 2015
    Assignee: Evonik Degussa GmbH
    Inventors: Stephan Wieber, Matthias Patz, Bernhard Stuetzel, Michael Coelle, Nicole Brausch, Janette Klatt, Jutta Hessing
  • Patent number: 8741253
    Abstract: Process for preparing higher hydridosilanes of the general formula H—(SiH2)n—H where n?2, in which—one or more lower hydridosilanes—hydrogen, and—one or more transition metal compounds comprising elements of transition group VIII of the Periodic Table and the lanthanides are reacted at a pressure of more than 5 bar absolute, subsequently depressurized and the higher hydridosilanes are separated off from the reaction mixture obtained.
    Type: Grant
    Filed: May 25, 2009
    Date of Patent: June 3, 2014
    Assignee: Evonik Degussa GmbH
    Inventors: Nicole Brausch, Andre Ebbers, Guido Stochniol, Martin Trocha, Yücel Önal, Jörg Sauer, Bernhard Stützel, Dorit Wolf, Harald Stüger
  • Patent number: 8709858
    Abstract: The present invention relates to a method for decreasing or increasing the band gap shift in the production of photovoltaic devices by means of coating a substrate with a formulation containing a silicon compound, e.g., in the production of a solar cell comprising a step in which a substrate is coated with a liquid-silane formulation, the invention being characterized in that the formulation also contains at least one germanium compound. The invention further relates to the method for producing such a photovoltaic device.
    Type: Grant
    Filed: April 28, 2010
    Date of Patent: April 29, 2014
    Assignee: Evonik Degussa GmbH
    Inventors: Bernhard Stuetzel, Wolfgang Fahrner
  • Patent number: 8470632
    Abstract: The present invention relates to a process for producing a doped silicon layer on a substrate, comprising the steps of (a) providing a liquid silane formulation and a substrate, (b) applying the liquid silane formulation to the substrate, (c) introducing electromagnetic and/or thermal energy to obtain an at least partly polymorphic silicon layer, (d) providing a liquid formulation which comprises at least one aluminum-containing metal complex, (e) applying this formulation to the silicon layer obtained after step (c) and then (f) heating the coating obtained after step (e) by introducing electromagnetic and/or thermal energy, which decomposes the formulation obtained after step (d) at least to metal and hydrogen, and then (g) cooling the coating obtained after step (f) to obtain an Al-doped or Al- and metal-doped silicon layer, to doped silicon layers obtainable by the process and to the use thereof for production of light-sensitive elements and electronic components.
    Type: Grant
    Filed: November 10, 2010
    Date of Patent: June 25, 2013
    Assignee: Evonik Degussa GmbH
    Inventors: Bernhard Stuetzel, Wolfgang Fahrner
  • Publication number: 20130099236
    Abstract: The invention relates to a process for producing an oxygen-containing surface or interface of a silicon layer, which is arranged on a substrate, especially in the production of photovoltaic units.
    Type: Application
    Filed: June 20, 2011
    Publication date: April 25, 2013
    Applicant: Evonik Degussa GmbH
    Inventors: Bernhard Stuetzel, Wolfgang Fahrner
  • Publication number: 20120291665
    Abstract: The present invention relates to a method for oligomerizing hydridosilanes, wherein a composition comprising substantially at least one non-cyclic hydridosilane having a maximum of 20 silicon atoms as the hydridosilane is thermally converted at temperatures below 235° C. in the absence of a catalyst, the oligomers that can be produced according to the method, and the use thereof.
    Type: Application
    Filed: February 16, 2011
    Publication date: November 22, 2012
    Applicant: Evonik Degussa GmbH
    Inventors: Stephan Wieber, Matthias Patz, Bernhard Stuetzel, Michael Coelle, Nicole Brausch, Janette Klatt, Jutta Hessing
  • Publication number: 20120205654
    Abstract: The invention relates to a formulation which contains at least one silane and at least one carbon polymer in a solvent, and to the production of a silicon layer on a substrate which is coated with such a formulation.
    Type: Application
    Filed: October 18, 2010
    Publication date: August 16, 2012
    Applicant: Enonik Degussa GmbH
    Inventors: Bernhard Stuetzel, Matthias Patz
  • Publication number: 20120199832
    Abstract: The present invention relates to a process for producing a doped silicon layer on a substrate, comprising the steps of (a) providing a liquid silane formulation and a substrate, (b) applying the liquid silane formulation to the substrate, (c) introducing electromagnetic and/or thermal energy to obtain an at least partly polymorphic silicon layer, (d) providing a liquid formulation which comprises at least one aluminium-containing metal complex, (e) applying this formulation to the silicon layer obtained after step (c) and then (f) heating the coating obtained after step (e) by introducing electromagnetic and/or thermal energy, which decomposes the formulation obtained after step (d) at least to metal and hydrogen, and then (g) cooling the coating obtained after step (f) to obtain an Al-doped or Al- and metal-doped silicon layer, to doped silicon layers obtainable by the process and to the use thereof for production of light-sensitive elements and electronic components.
    Type: Application
    Filed: November 10, 2010
    Publication date: August 9, 2012
    Applicant: Evonik Degussa GmbH
    Inventors: Bernhard Stuetzel, Wolfgang Fahrner
  • Publication number: 20120042951
    Abstract: The present invention relates to a method for decreasing or increasing the band gap shift in the production of photovoltaic devices by means of coating a substrate with a formulation containing a silicon compound, e.g., in the production of a solar cell comprising a step in which a substrate is coated with a liquid-silane formulation, the invention being characterized in that the formulation also contains at least one germanium compound. The invention further relates to the method for producing such a photovoltaic device.
    Type: Application
    Filed: April 28, 2010
    Publication date: February 23, 2012
    Applicant: EVONIK DEGUSSA GmbH
    Inventors: Bernhard Stuetzel, Wolfgang Fahrner
  • Publication number: 20110189072
    Abstract: Process for preparing higher hydridosilanes of the general formula H—(SiH2)n—H where n?2, in which—one or more lower hydridosilanes—hydrogen, and—one or more transition metal compounds comprising elements of transition group VIII of the Periodic Table and the lanthanides are reacted at a pressure of more than 5 bar absolute, subsequently depressurized and the higher hydridosilanes are separated off from the reaction mixture obtained.
    Type: Application
    Filed: May 25, 2009
    Publication date: August 4, 2011
    Applicant: Evonik Degussa GmbH
    Inventors: Nicole Brausch, Andre Ebbers, Guido Stochniol, Martin Trocha, Yücel Önal, Jörg Sauer, Bernhard Stützel, Dorit Wolf, Harald Stüger
  • Publication number: 20040161380
    Abstract: Microporous titanium dioxide particles having a crystalline structure and having an apparent density of less than 1.9 g/cm3.
    Type: Application
    Filed: February 19, 2003
    Publication date: August 19, 2004
    Applicant: DEGUSSA AG
    Inventors: Ralf Zimehl, Jovica Zorjanovic, Bernhard Stuetzel, Friedrich Georg Schmidt, Andreas Pawlik