Patents by Inventor Bernhardt F. Cordts

Bernhardt F. Cordts has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Implantation process using substoichiometric, oxygen doses at different energies
    Patent number: 6794264
    Abstract: The present invention provides a method for creation of high quality semiconductor-on-insulator structures, e.g., silicon-on-insulator structures, using implantation of sub-stoichiometric doses of oxygen at multiple energies. The method employs sequential steps of ion implantation and high temperature annealing to produce structures with a top silicon layer having a thickness ranging from 10-250 nm and a buried oxide layer having a thickness 30-300 nm. The buried oxide layer has a breakdown field greater than 5 MV/cm. Further, the density of silicon inclusions in the BOX region is less than 2×107 cm−2. The process of the invention can be used to create an entire SOI wafer, or be used to create patterned SOI, regions where SOI regions are integrated with non-SOI regions.
    Type: Grant
    Filed: April 30, 2002
    Date of Patent: September 21, 2004
    Assignee: Ibis Technology Corporation
    Inventors: Robert P. Dolan, Bernhardt F. Cordts, III, Maria J. Anc, Micahel L. Alles
  • Implantation process using substoichiometric, oxygen doses at different energies
    Publication number: 20020123211
    Abstract: The present invention provides a method for creation of high quality semiconductor-on-insulator structures, e.g., silicon-on-insulator structures, using implantation of sub-stoichiometric doses of oxygen at multiple energies. The method employs sequential steps of ion implantation and high temperature annealing to produce structures with a top silicon layer having a thickness ranging from 10-250 nm and a buried oxide layer having a thickness 30-300 nm. The buried oxide layer has a breakdown field greater than 5 MV/cm. Further, the density of silicon inclusions in the BOX region is less than 2×107 cm−2. The process of the invention can be used to create an entire SOI wafer, or be used to create patterned SOI, regions where SOI regions are integrated with non-SOI regions.
    Type: Application
    Filed: April 30, 2002
    Publication date: September 5, 2002
    Applicant: IBIS TECHNOLOGY
    Inventors: Robert P. Dolan, Bernhardt F. Cordts, Maria J. Anc, Micahel L. Alles
  • Implantation process using sub-stoichiometric, oxygen doses at different energies
    Patent number: 6417078
    Abstract: The present invention provides a method for creation of high quality semiconductor-on-insulator structures, e.g., silicon-on-insulator structures, using implantation of sub-stoichiometric doses of oxygen at multiple energies. The method employs sequential steps of ion implantation and high temperature annealing to produce structures with a top silicon layer having a thickness ranging from 10-250 nm and a buried oxide layer having a thickness 30-300 nm. The buried oxide layer has a breakdown field greater than 5 MV/cm. Further, the density of silicon inclusions in the BOX region is less than 2×107 cm−2. The process of the invention can be used to create an entire SOI wafer, or be used to create patterned SOI, regions where SOI regions are integrated with non-SOI regions.
    Type: Grant
    Filed: December 21, 2000
    Date of Patent: July 9, 2002
    Assignee: Ibis Technology Corporation
    Inventors: Robert P. Dolan, Bernhardt F. Cordts, III, Maria J. Anc, Micahel L. Alles